Infineon Technologies CY62146GN30-45BVXI

Overview

CY62146GN30-45BVXI from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), featuring ultra-low standby current (8.7 µA max) and automatic CE-controlled power-down mode. It serves as a low-power data buffer in portable embedded systems requiring fast random-access storage with battery life optimization.

For engineers reviewing the CY62146GN30-45BVXI datasheet, CY62146GN30-45BVXI pinout, CY62146GN30-45BVXI application, or CY62146GN30-45BVXI equivalent, key selection criteria include industrial temperature support (–40 °C to +85 °C), byte-wide I/O control via BHE/ BLE, TSOP II and VFBGA package options, and guaranteed 45 ns read/write timing at full voltage range.

Technical Context

The CY62146GN30-45BVXI implements a fully static 256K × 16 memory array with independent byte enable (BHE/BLE) for selective 8-bit writes, supporting both address- and OE-controlled read cycles. Its CMOS architecture enables deterministic timing with tRC = 45 ns, tAA = 45 ns, and tDOE = 22 ns under industrial conditions.

Power management is handled through three distinct states: active (ICC ≤ 20 mA at fmax), automatic CE power-down (ISB2 ≤ 8.7 µA), and data retention (ICCDR ≤ 13 µA at VDR ≥ 1.0 V). Input thresholds comply with CMOS levels across both voltage ranges, and all outputs enter high-impedance state when CE, OE, BHE, or BLE are deasserted.

Key Specifications

Pinout & Package

Available in 48-ball VFBGA (CY62146GN30-45BVXI) and 44-pin TSOP II packages. The VFBGA variant uses a 6×8 ball grid with NC, power, ground, address, data, and control terminals arranged per Figure 2 of datasheet 001-95417 Rev. *E.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and NCS25616-45G, the CY62146GN30-45BVXI uniquely delivers dual-voltage operation with lowest standby current (8.7 µA), making it optimal for battery-critical portable designs where voltage rail diversity and ultra-low leakage are jointly required.

Availability

CY62146GN30-45BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, and automotive body control units requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for CY62146GN30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The MoBL® (More Battery Life) SRAM product line was engineered specifically for ultra-low-power portable electronics, emphasizing sub-10 µA standby current, fast wake-up, and flexible voltage operation without performance trade-offs.

FAQ

What is the minimum VCC required to retain data in CY62146GN30-45BVXI?

The device guarantees data retention down to VCC = 1.0 V, as specified in the ICCDR parameter. At this voltage, maximum retention current is 13 µA, and the chip must be deselected (CE HIGH) to enter retention mode. This enables use in brown-out scenarios where system power rails sag but memory contents must persist.

Does CY62146GN30-45BVXI support true 5 V operation?

Yes - the device is fully rated for 4.5 V to 5.5 V operation, with guaranteed timing (45 ns), input thresholds (VIH ≥ 2.2 V), and output drive (VOL ≤ 0.4 V at 2.1 mA) across that range. No level shifting is needed when interfacing with legacy 5 V microcontrollers or peripheral ICs.

How does automatic power-down work when CE is HIGH?

When CE is driven HIGH while other inputs remain at valid CMOS levels, the device automatically enters ISB2 mode with ≤8.7 µA current draw. Address and data bus activity ceases, outputs go high-impedance, and internal circuitry powers down - no additional control signals or sequencing are required.

Can I use only the lower byte (I/O0–I/O7) without connecting BHE?

Yes - if BHE remains unconnected or held HIGH, only the lower byte (I/O0–I/O7) is active during reads/writes. BLE must be asserted LOW to enable lower-byte access; leaving BHE floating is not recommended, but tying it HIGH disables upper-byte functionality entirely and is electrically safe.