Infineon Technologies CY62146GN30-45BVXIT

Overview

CY62146GN30-45BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, operating across 2.2–3.6 V and 4.5–5.5 V supply ranges, featuring ultra-low standby current (8.7 µA max) and automatic CE-controlled power-down mode. It serves as a high-speed, low-power data buffer in portable industrial controllers requiring reliable non-volatile data retention during sleep states.

For engineers reviewing the CY62146GN30-45BVXIT datasheet, CY62146GN30-45BVXIT pinout, CY62146GN30-45BVXIT application, or CY62146GN30-45BVXIT equivalent, this SRAM delivers verified MoBL® performance for battery-constrained embedded systems where active current (3.5 mA at 1 MHz), data retention voltage (1.0 V min), and dual-voltage compatibility are critical selection criteria.

Technical Context

The CY62146GN30-45BVXIT implements a 256K × 16 asynchronous SRAM architecture with independent byte-enable control (BHE/ BLE), enabling selective 8-bit writes to upper or lower data bytes without disturbing adjacent memory locations. Its CMOS design supports full rail-to-rail input thresholds (VIH = 2.0 V min at 2.7–3.6 V) and guarantees tri-state output behavior during deselection (CE HIGH), OE HIGH, or write cycles.

Switching timing is defined by strict AC parameters including tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns, all validated under industrial temperature (–40 °C to +85 °C) and dual VCC ranges. The device enters automatic power-down when CE is deasserted, reducing ICC to ≤8.7 µA - an 80% reduction versus active mode and >99% versus full operation.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Compared with IS62WV25616BLL-45NLI and NCS25616L-45Z, the CY62146GN30-45BVXIT uniquely combines dual-voltage operation, sub-10 µA standby, and VFBGA packaging - making it optimal for space-constrained, multi-rail portable industrial devices where power efficiency and footprint are co-prioritized.

Availability

CY62146GN30-45BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and smart meter communication modules requiring stable component supply across extended product lifecycles.

Supply support for CY62146GN30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a leader in high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications.

The CY62146GN series was designed specifically for MoBL® (More Battery Life) applications - targeting portable and energy-harvested systems needing fast, low-leakage SRAM with robust data retention at minimal voltage.

FAQ

Does CY62146GN30-45BVXIT support true 2.5 V operation?

No - the device is specified for two discrete VCC ranges: 2.2–3.6 V and 4.5–5.5 V. Operation at 2.5 V falls within the 2.2–3.6 V range and is fully supported per datasheet Table 3 (Operating Range). All AC and DC parameters, including tRC = 45 ns and ISB2 ≤ 8.7 µA, are guaranteed across this band.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes - asserting both BHE and BLE LOW while CE and WE are LOW enables simultaneous writing of all 16 data bits (I/O0–I/O15) to the addressed location. This is explicitly supported in the functional description and truth table (page 11), and no timing penalty or conflict occurs.

What is the maximum junction temperature during continuous operation?

The absolute maximum junction temperature is 125 °C, derived from the ambient temperature rating (–40 °C to +85 °C) and thermal resistance θJA = 31.35 °C/W for the VFBGA package. At 85 °C ambient and 6 mA ICC, power dissipation is ~21 mW, yielding TJ ≈ 85 + (21 mW × 31.35) = 91.6 °C - well within safe margin.

Is the VFBGA package lead-free and RoHS-compliant?

Yes - the "XIT" suffix in CY62146GN30-45BVXIT denotes a lead-free, RoHS-compliant 48-ball VFBGA package per Cypress's ordering code definitions (page 12 of datasheet 001-95417 Rev. *E). Ball composition is SnAgCu (SAC305), and moisture sensitivity level is MSL3.