Infineon Technologies CY62146GN30-45ZSXI

Overview

CY62146GN30-45ZSXI from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, industrial temperature range (–40 °C to +85 °C), dual voltage support (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (max 8.7 µA), and automatic CE power-down mode. It serves as main data buffer in portable telecom systems requiring battery life extension.

For engineers reviewing the CY62146GN30-45ZSXI datasheet, CY62146GN30-45ZSXI pinout, CY62146GN30-45ZSXI application, or CY62146GN30-45ZSXI equivalent, key selection criteria include TSOP II/VFBGA package compatibility, byte-enable-controlled 16-bit I/O partitioning, MoBL® low-power timing behavior, and industrial-grade voltage/temperature margining for embedded memory subsystems.

Technical Context

This SRAM implements a fully decoded 256K × 16 array with independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling selective 8-bit writes to upper or lower data bytes without read-modify-write cycles. Address decoding covers A0–A17 (18-bit), supporting 262,144 unique locations.

Its automatic power-down logic reduces ICC by >99% when CE is HIGH and all address lines are stable, with guaranteed tPD ≤ 45 ns and tPU = 0 ns. Tri-state output control ensures clean bus sharing via OE, BHE, BLE, and CE-driven high-impedance transitions (tHZOE ≤ 18 ns, tLZCE ≤ 10 ns).

Key Specifications

Pinout & Package

Available in 44-pin TSOP II (ZSXI suffix) and 48-ball VFBGA packages. This variant (ZSXI) uses the 44-pin TSOP II footprint with standard JEDEC MO-143AC dimensions (12.0 mm × 20.0 mm × 1.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and N25S80-45G1T3E, CY62146GN30-45ZSXI uniquely delivers dual-voltage operation and sub-10 µA standby across industrial temperature, making it optimal for cost-sensitive, battery-constrained portable and industrial systems requiring flexible rail compatibility.

Availability

CY62146GN30-45ZSXI is available at Aetrix Electronics and suitable for portable telecom devices, industrial PLCs, and automotive infotainment head units requiring stable component supply with long lifecycle visibility.

Supply support for CY62146GN30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade reliability.

CY62146GN belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable electronics where extended battery runtime and industrial temperature resilience are primary design constraints.

FAQ

What is the maximum clock frequency supported by CY62146GN30-45ZSXI?

CY62146GN30-45ZSXI has a 45 ns access time, supporting maximum bus frequencies up to approximately 22 MHz for read cycles without wait states. Its timing is asynchronous - no internal clock input exists. System timing must satisfy tRC ≥ 45 ns, tAA ≤ 45 ns, and tDOE ≤ 22 ns per the datasheet's switching characteristics table.

Can CY62146GN30-45ZSXI operate at 3.3 V and still meet its 45 ns specification?

Yes. The device is fully specified for 2.2–3.6 V operation, and all 45 ns timing parameters (including tRC, tAA, tACE) are guaranteed across this entire voltage range at industrial temperatures. Electrical characteristics tables confirm VOH, VOL, and ICC remain compliant at VCC = 3.3 V.

Does CY62146GN30-45ZSXI require external pull-up resistors on its control pins?

No. All control inputs (CE, OE, WE, BHE, BLE) are CMOS-compatible with TTL-level thresholds and do not require external pull-ups. The datasheet specifies VIH(min) = 1.8 V (at 2.2–2.7 V VCC) and VIL(max) = 0.6 V, ensuring robust noise margins without added components.

How does the automatic power-down feature behave when address lines float?

Automatic power-down activates only when CE is HIGH *and* all address inputs are stable (not toggling). Floating address lines may cause unintended address changes, preventing entry into deep standby. For guaranteed ISB2 ≤ 8.7 µA, tie unused address lines to fixed logic levels or use series resistors to damp noise.