Infineon Technologies CY62146GN30-45ZSXIT

Overview

CY62146GN30-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, industrial temperature range (–40 °C to +85 °C), dual voltage support (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (max 8.7 µA), and automatic CE-controlled power-down mode. It serves as main data buffer in portable telecom systems requiring battery longevity and fast random-access storage.

For engineers reviewing the CY62146GN30-45ZSXIT datasheet, CY62146GN30-45ZSXIT pinout, CY62146GN30-45ZSXIT application, or CY62146GN30-45ZSXIT equivalent, key selection criteria include byte-selectable I/O architecture (BHE/ BLE), TSOP II and VFBGA package compatibility, MoBL® low-power operation, and guaranteed 45 ns read/write timing across full voltage and temperature ranges.

Technical Context

The CY62146GN30-45ZSXIT implements a 256K × 16 asynchronous SRAM array with independent high- and low-byte enables (BHE, BLE), enabling partial-word writes without read-modify-write cycles. Its CMOS design supports two distinct VCC operating windows: 2.2–3.6 V for low-voltage portable use and 4.5–5.5 V for legacy 5 V systems.

Power management relies on automatic CE-driven state transitions: CE HIGH forces full standby (<8.7 µA), while address inactivity triggers intermediate power-down mode (ISB1/ISB2). Output drivers enter high-impedance state under four conditions - CE HIGH, OE HIGH, BHE/ BLE HIGH, or active write - ensuring bus isolation during multi-device sharing.

Key Specifications

Pinout & Package

Available in 44-pin TSOP II (Type II thin small outline package) and 48-ball VFBGA (very fine-pitch ball grid array) packages. Pin functions are identical across both variants; NC pins are unconnected on die.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616AS-45SI, the CY62146GN30-45ZSXIT uniquely combines autonomous CE-triggered power-down, dual-voltage flexibility, and byte-selectable writes - making it optimal for portable and mixed-rail embedded systems where firmware simplicity and battery life are co-primary constraints.

Availability

CY62146GN30-45ZSXIT is available at Aetrix Electronics and suitable for portable telecom terminals, industrial data loggers, and automotive body control modules requiring stable component supply, long-lifecycle availability, and guaranteed industrial-grade qualification.

Supply support for CY62146GN30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and communications markets, with emphasis on low-power innovation and long-term supply stability.

The CY62146GN series belongs to Cypress's MoBL® (More Battery Life) SRAM portfolio, engineered specifically for portable and energy-constrained applications where nanosecond-speed access must coexist with microamp-level standby consumption.

FAQ

What is the maximum clock frequency supported by CY62146GN30-45ZSXIT?

The CY62146GN30-45ZSXIT is an asynchronous SRAM and does not use a clock signal. Its timing is governed by access and cycle times: tRC = 45 ns minimum read/write cycle time, corresponding to a maximum effective throughput of approximately 22.2 MHz for consecutive random accesses. Sustained burst rates depend on address setup/hold and OE/CE timing margins per the datasheet switching characteristics table.

Can CY62146GN30-45ZSXIT operate reliably at 2.5 V?

Yes. The device is fully specified for operation across 2.2 V to 3.6 V, including 2.5 V. At 2.5 V, all AC parameters (e.g., tRC, tAA, tDOE) meet the 45 ns grade, and DC characteristics such as VOH (min 2.0 V), VOL (max 0.4 V), and ISB2 (≤8.7 µA) remain within guaranteed limits per the Electrical Characteristics table on page 4 of Rev. *E datasheet.

Does CY62146GN30-45ZSXIT require external pull-up resistors on control pins?

No external pull-ups are required. All control inputs (CE, OE, WE, BHE, BLE) are CMOS-compatible with VIH(min) = 2.0 V (at VCC = 2.7–3.6 V) and VIL(max) = 0.8 V, allowing direct connection to standard 3.3 V or 5 V logic outputs. However, Cypress specifies that CE must be actively driven to CMOS levels - floating CE is not permitted for guaranteed ISB1/ISB2 compliance.

Is the 48-ball VFBGA package RoHS-compliant and lead-free?

Yes. The CY62146GN30-45ZSXIT in 48-ball VFBGA (package code "ZSX") is RoHS-compliant and lead-free, as confirmed in Cypress's official ordering information (page 12, Rev. *E) and material declaration documents. The "IT" suffix in the full part number denotes industrial temperature grade and lead-free finish per JEDEC J-STD-609 Category 1.