Infineon Technologies CY62146GN-45ZSXI

Overview

CY62146GN-45ZSXI from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), featuring ultra-low standby current (8.7 µA max) and automatic CE-controlled power-down mode. It serves as a high-reliability, low-power memory buffer in portable industrial controllers and battery-powered telemetry modules.

For engineers reviewing the CY62146GN-45ZSXI datasheet, CY62146GN-45ZSXI pinout, CY62146GN-45ZSXI application, or CY62146GN-45ZSXI equivalent, key selection criteria include its dual-voltage support, byte-enable architecture (BHE/ BLE), TSOP II and VFBGA package options, and guaranteed 45 ns read/write timing under industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a synchronous, address-decoded 256K × 16-bit array with independent byte-high (I/O8–I/O15/BHE) and byte-low (I/O0–I/O7/BLE) write control. Its CMOS design enables full operation at 2.2 V while maintaining 45 ns tRC and <10 ns output enable delay (tDOE = 22 ns, tLZOE = 5 ns).

The device supports three power states: active (ICC ≤ 20 mA at fmax), automatic CE power-down (ISB2 ≤ 8.7 µA), and data retention (ICCDR ≤ 13 µA at VDR ≥ 1.0 V). Input thresholds are compatible with TTL and CMOS logic across both voltage domains, and all I/Os enter high-Z when CE is HIGH or during write cycles.

Key Specifications

Pinout & Package

Available in 44-pin TSOP II (ZS) and 48-ball VFBGA (XI) packages. Pin functions are identical across both variants; NC pins are not bonded on-die.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and NVTFS25616PLFTBG, CY62146GN-45ZSXI uniquely balances wide-voltage operation, ultra-low standby power, and dual-package availability - making it optimal for cost-sensitive, battery-limited designs needing 5 V interoperability without added backup circuitry.

Availability

CY62146GN-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, smart utility meters, and ruggedized telemetry gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62146GN-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on reliability and low-power innovation.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained systems requiring fast, deterministic memory access with minimal quiescent power - optimized for handheld instrumentation, remote sensors, and battery-backed control units.

FAQ

What is the minimum VCC required to retain data in CY62146GN-45ZSXI?

The device guarantees data retention down to VDR = 1.0 V, with ICCDR ≤ 13 µA measured at VCC = 1.2 V and CE HIGH. Below 1.0 V, retention is not specified. This threshold enables operation during brownout conditions common in battery-fed systems where voltage sags occur before complete shutdown.

Can CY62146GN-45ZSXI operate reliably at 2.5 V?

Yes - the 2.2–3.6 V operating range explicitly includes 2.5 V. At this voltage, access time remains 45 ns (guaranteed), standby current is ≤8.7 µA, and input thresholds (VIH ≥ 1.8 V, VIL ≤ 0.6 V) ensure robust noise margins against 2.5 V logic families like LVC and ALVC.

Does the TSOP II package support lead-free reflow profiles?

Yes - the ZS suffix denotes RoHS-compliant, lead-free 44-pin TSOP II packaging qualified for JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. Thermal resistance (θJA = 68.85 °C/W) is characterized on standard four-layer PCBs per JEDEC 51-2.

How does automatic power-down behave when OE is HIGH but CE is LOW?

When CE is LOW and OE is HIGH, the device remains in active mode (not power-down), but outputs go high-Z. Power-down only activates when CE is HIGH - regardless of OE, WE, or BHE/ BLE states. Active current (ICC) continues flowing until CE transitions HIGH, enabling precise timing control of power state transitions.