Infineon Technologies CY62146GN-45ZSXIT
- Part No.:
- CY62146GN-45ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62146GN-45ZSXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:1,668
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Product details
Overview
CY62146GN-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (8.7 µA max), and automatic CE-controlled power-down mode. It serves as main data buffer in portable embedded systems requiring battery longevity and fast random-access storage.
For engineers reviewing the CY62146GN-45ZSXIT datasheet, CY62146GN-45ZSXIT pinout, CY62146GN-45ZSXIT application, or CY62146GN-45ZSXIT equivalent, this MoBL® SRAM delivers verified timing compliance, byte-selectable I/O architecture, industrial temperature operation (–40 °C to +85 °C), and dual-package availability for space-constrained PCB layouts.
Technical Context
The CY62146GN-45ZSXIT implements a full CMOS 256K × 16 asynchronous SRAM array with independent byte-enable control (BHE/BLE), enabling selective 8-bit writes without disturbing adjacent bytes. Its logic supports three active modes-address-controlled read, OE-controlled read, and WE-controlled write-with guaranteed tRC = 45 ns and tAA = 45 ns under worst-case VCC and temperature conditions.
Power management is implemented via hardware-driven CE gating: when CE is HIGH, the device enters automatic power-down mode, reducing ICC to ≤8.7 µA (ISB2), and all I/Os transition to high-impedance state. Data retention is maintained down to VDR = 1.0 V with ICCDR ≤13 µA, supporting low-power suspend states in handheld devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K words × 16 bits - provides 512 KB of random-access storage with parallel 16-bit data bus interface |
| Access Time | 45 ns - guarantees deterministic read latency for real-time firmware execution and DMA buffering |
| Voltage Ranges | 2.2–3.6 V and 4.5–5.5 V - supports dual-rail legacy and modern low-voltage microcontroller interfaces |
| Standby Current | 8.7 µA max at 3.6 V - enables multi-week battery life in always-on sensor nodes and wearables |
| Active Current | 6 mA max at f = fmax - limits thermal load during burst transfers in compact enclosures |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade deployment in automotive infotainment and factory HMIs |
| Data Retention Voltage | 1.0 V minimum - allows graceful shutdown and memory persistence during brown-out events |
Pinout & Package
Available in 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) and 44-pin TSOP II (10 mm × 20 mm) packages. Pin functions are identical across both variants.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selecting one of 256K locations; A17 enables full 512 KB addressing |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; direction controlled by CE/WE/OE states; high-Z when deselected |
| CE | Chip Enable | Active-low global enable; HIGH forces automatic power-down and I/O high-Z state |
| OE | Output Enable | Active-low read strobe; controls output drivers independently of CE and WE |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CE and BHE/BLE are also asserted |
| BHE / BLE | Byte High/Low Enable | Independent 8-bit write control: BLE enables I/O0–I/O7; BHE enables I/O8–I/O15 |
| VCC / VSS | Power / Ground | Dual VCC pins reduce IR drop; dedicated VSS pins improve noise immunity on 16-bit bus |
| NC | No Connect | Unbonded die pads; must remain unconnected per datasheet to avoid latch-up risk |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 3.5 mA typical at 1 MHz, extending battery runtime in portable instrumentation |
| Automatic CE Power-Down | Slashes standby current by >99% versus active mode without external control logic or firmware intervention |
| Byte-Selectable Write | Enables partial-word updates without read-modify-write cycles, cutting bus traffic and CPU overhead |
| Wide Dual-Voltage Operation | Eliminates level-shifting components when interfacing with mixed-voltage SoCs (e.g., 3.3 V core + 5 V peripherals) |
| Industrial Temperature Range | Validated operation from –40 °C to +85 °C ensures reliability in uncontrolled environments like vehicle cabins or outdoor gateways |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Real-time acquisition and local caching of ECG waveforms in battery-powered patient monitors. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between analog front-end ADC and ARM Cortex-M4 processor. Use Value: 45 ns access time enables zero-wait-state waveform streaming; 8.7 µA standby preserves battery charge during sleep intervals. |
Use Scenario: Storing transient I/O status and diagnostic logs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding last-known state during AC power loss and recovery. Use Value: 1.0 V data retention threshold allows memory holdover using supercapacitor backup without auxiliary regulators. |
| Automotive Infotainment UI Cache | Wireless Sensor Node Memory |
|
Use Scenario: Caching GUI assets and touch event history in head-unit displays with thermal constraints. IC Role / Device Role / Timing Role: Low-power SRAM co-located with display controller for rapid pixel buffer access. Use Value: Dual-voltage support (2.2–3.6 V) matches automotive SoC I/O rails; 68.85 °C/W θJA in TSOP II suits convection-cooled designs. |
Use Scenario: Temporary storage of sensor fusion outputs before BLE transmission in coin-cell powered environmental sensors. IC Role / Device Role / Timing Role: Burst-mode memory staging area synchronized to MCU wake-up intervals. Use Value: Byte-enable capability minimizes energy per write; 3.5 µA typical ISB2 extends 10-year battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-45NLI | Same 256K × 16 organization and 45 ns speed, but only supports 2.7–3.6 V range; no 4.5–5.5 V option | Not suitable for 5 V legacy microcontroller interfaces; requires level shifters in mixed-voltage systems | Select when design uses single 3.3 V rail and prioritizes lower cost over voltage flexibility |
| ON Semiconductor NVSRAM NVTFS25616L-45G | Includes integrated EEPROM backup; higher standby current (25 µA) and larger package (54-pin TSSOP) | Provides nonvolatile data retention without external backup circuitry; trades power and size for data persistence | Select when system-level data integrity during power loss is mandatory and board space permits larger footprint |
Compared with IS62WV25616BLL-45NLI and NVTFS25616L-45G, the CY62146GN-45ZSXIT uniquely balances wide voltage compatibility, ultra-low standby power, and compact packaging-making it optimal for portable, battery-sensitive, and thermally constrained applications where external nonvolatility is managed separately.
Availability
CY62146GN-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, automotive infotainment UI cache, and wireless sensor node memory requiring stable component supply and long-term lifecycle assurance.
Supply support for CY62146GN-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics with emphasis on low-power innovation.
The MoBL® (More Battery Life) SRAM product line was engineered specifically for portable and energy-constrained systems, delivering industry-leading standby current and flexible voltage operation without sacrificing speed or density.
FAQ
What is the maximum clock frequency supported by CY62146GN-45ZSXIT?
CY62146GN-45ZSXIT is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (tAA = 45 ns max) and cycle time (tRC = 45 ns max), allowing reliable operation up to approximately 22 MHz sustained random read/write rates when interfaced with appropriate address/data setup/hold margins.
Can CY62146GN-45ZSXIT operate at 3.0 V with guaranteed 45 ns timing?
Yes. The device is fully specified for 2.2–3.6 V operation, and all switching characteristics-including tAA and tRC = 45 ns-are guaranteed across this entire range at industrial temperature (–40 °C to +85 °C), provided VCC remains stable and decoupled per layout guidelines in the datasheet.
How does the automatic power-down feature activate?
Automatic power-down activates when Chip Enable (CE) is driven HIGH while all address and data lines are held static. No additional control signals or timing sequences are required-the internal circuitry detects CE HIGH and static address bus to reduce ICC to ≤8.7 µA within 45 ns (tPD).
Are the NC pins on CY62146GN-45ZSXIT required to be grounded or left floating?
NC pins are not connected to the die and must remain unconnected on the PCB. Neither grounding nor pulling them HIGH is permitted, as doing so may introduce parasitic coupling or violate internal isolation boundaries defined in the silicon layout.
CY62146GN-45ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62146GN-45ZSXIT FAQ
1.How can I place an order for CY62146GN-45ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62146GN-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62146GN-45ZSXIT reliable?
The price and inventory of CY62146GN-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146GN-45ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62146GN-45ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146GN-45ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62146GN-45ZSXIT?
CY62146GN-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62146GN-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62146GN-45ZSXIT?
For technical support, including CY62146GN-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146GN-45ZSXIT requirements.
6.How does Aetrix verify that CY62146GN-45ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62146GN-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146GN-45ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62146GN-45ZSXIT?
All CY62146GN-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146GN-45ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62146GN-45ZSXIT part is unused and in its original packaging.
Return procedure for CY62146GN-45ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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