Infineon Technologies CY621472E30LL-45ZSXI
- Part No.:
- CY621472E30LL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY621472E30LL-45ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:223
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Product details
Overview
CY621472E30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (7 µA max), byte power-down control via BHE/ BLE, and automatic CE-based power-down for portable battery-powered systems.
For engineers reviewing the CY621472E30LL-45ZSXI datasheet, CY621472E30LL-45ZSXI pinout, CY621472E30LL-45ZSXI application, or CY621472E30LL-45ZSXI equivalent, key selection criteria include TSOP II package compatibility, dual chip enable (CE1/CE2) logic, I/O byte masking capability, and data retention at 1.5 V.
Technical Context
The device implements a fully static 256K × 16 SRAM array with complementary metal oxide semiconductor (CMOS) process technology optimized for low active and standby power. Its dual chip enable architecture (CE1 LOW and CE2 HIGH for selection) enables flexible memory expansion in multi-bank systems.
Byte-level write control is achieved through independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, allowing partial-word writes without read-modify-write cycles. Power-down is triggered automatically when CE1 is HIGH or CE2 is LOW-or when both BHE and BLE are HIGH-reducing ICC to ≤7 µA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K words × 16 bits); supports 16-bit data bus interface without external multiplexing |
| Access Time | 45 ns; guarantees full-speed operation at 22.2 MHz bus frequency with no wait states |
| Supply Voltage | 2.2 V to 3.6 V; compatible with 2.5 V and 3.3 V system rails, including mixed-voltage designs |
| Standby Current | 7 µA max (industrial temp); enables >1-year battery life in always-on IoT sensor nodes |
| Active Current | 6 mA max at f = fmax; limits thermal load in compact handheld enclosures |
| Data Retention Voltage | 1.5 V min; allows memory state preservation during brown-out or controlled power-gating events |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial-grade embedded control and automotive body electronics |
Pinout & Package
Package: 44-pin Thin Small Outline Package (TSOP II), 400 mil width, lead-free (Pb-free) construction per JEDEC MO-141AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A17 is MSB |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW |
| CE1, CE2 | Chip Enable Inputs | Two-input enable logic: device selected only when CE1 = LOW AND CE2 = HIGH |
| OE | Output Enable | Controls output drivers; I/O pins enter high-Z when OE = HIGH |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for setup/hold compliance |
| BLE, BHE | Byte Low/High Enable | Independent gating of low/high byte I/O; enables partial-word writes and reduces bus contention |
| VCC, VSS | Power Supply | Dual VCC pins (pins 31, 32) and dual VSS pins (pins 35, 36) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL™ Ultra-Low Power Architecture | Reduces typical standby current to 2.5 µA-enabling multi-year operation on coin-cell batteries |
| Dual Chip Enable (CE1/CE2) | Enables seamless memory banking and hierarchical decoding in 32-bit or wider systems |
| Independent Byte Write Control | Eliminates need for external latch or glue logic when updating only low/high byte of 16-bit word |
| Automatic Power-Down Mode | Enters sub-7 µA state without software intervention when CE or byte enables are deasserted |
| 1.5 V Data Retention | Maintains stored data during deep sleep or backup power modes, critical for real-time clock and event logging |
Applications
| Wireless Sensor Node Memory | Industrial HMI Local Cache |
|---|---|
Use Scenario: Battery-powered environmental sensor collecting temperature/humidity every 5 minutes and buffering 72 hours of data before transmission. IC Role / Device Role / Timing Role: Primary data buffer SRAM interfaced directly to microcontroller's 16-bit external memory bus. Use Value: 2.5 µA typical standby current extends CR2032 battery life beyond 3 years; 45 ns access enables fast burst reads during RF transmit windows. | Use Scenario: Touchscreen HMI panel storing GUI assets, button state history, and alarm logs in factory automation equipment. IC Role / Device Role / Timing Role: Off-chip memory extension for ARM Cortex-M7 MCU running FreeRTOS with limited internal SRAM. Use Value: Dual CE inputs allow clean partitioning between firmware code space and dynamic data space; TSOP II footprint fits tight PCB layouts. |
| Medical Wearable Data Logger | Automotive Body Control Module |
Use Scenario: ECG patch recording raw analog samples at 1 kHz, applying real-time filtering, and storing processed waveforms. IC Role / Device Role / Timing Role: High-reliability, low-power buffer between ADC DMA engine and flash storage subsystem. Use Value: Byte write capability permits efficient storage of 12-bit ADC results in packed 16-bit format; –40 °C to +85 °C rating ensures operation inside sealed wearable housing. | Use Scenario: Door module storing window position calibration, mirror angle presets, and fault codes across vehicle lifecycle. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration data updated infrequently but accessed on every power-up. Use Value: 1.5 V data retention allows memory contents to survive battery disconnects; Pb-free TSOP II meets automotive RoHS and AEC-Q200 alignment expectations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-45NLI | Same density (256K × 16), 45 ns speed, but uses single CE and no BHE/ BLE; 3.3 V only (3.0–3.6 V) | Lacks byte write control; requires external logic for partial-word updates | Select when system uses simple CE-only decoding and does not require byte masking |
| AS6C4008-45TIN | 4-Mbit (512K × 8) organization; 8-bit bus width; 45 ns; 2.7–3.6 V supply; no automatic power-down | Requires two devices for 16-bit interface; higher standby current (25 µA typ) | Select when board layout already uses 8-bit SRAMs or when byte masking is unnecessary |
Compared with IS62WV25616BLL-45NLI and AS6C4008-45TIN, CY621472E30LL-45ZSXI uniquely delivers byte-selectable writes, dual CE flexibility, and industry-leading 7 µA max standby-making it optimal for power-constrained 16-bit embedded systems requiring partial-word update efficiency.
Availability
CY621472E30LL-45ZSXI is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial HMIs, medical wearables, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for CY621472E30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
This device belongs to the MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated applications where extended runtime and reliable data retention under voltage stress are critical.
FAQ
What is the minimum VCC required to retain data in CY621472E30LL-45ZSXI?
The device guarantees data retention down to 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8.8 µA, and no external refresh is needed. This enables use in brown-out recovery sequences and backup power domains where main supply drops temporarily but memory state must persist.
How does the dual CE architecture (CE1 and CE2) affect memory mapping?
CE1 and CE2 implement active-LOW/active-HIGH logic: the device is selected only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding-e.g., CE2 can be driven by upper address bits to select memory banks, while CE1 serves as a global enable-reducing gate count versus single-CE alternatives.
Can I use CY621472E30LL-45ZSXI in a 2.5 V system?
Yes. The device operates across 2.2 V to 3.6 V, fully covering 2.5 V nominal rails. All AC and DC specifications-including 45 ns access time and 7 µA max ISB2-are guaranteed over this full range, including at VCC = 2.5 V ±5%, making it suitable for mixed-voltage FPGA or MCU interfaces.
What happens to I/O pins during write operations?
During an active write (CE1 LOW, CE2 HIGH, WE LOW), all I/O pins (I/O0–I/O15) become inputs regardless of OE or BHE/ BLE state. Outputs are disabled and enter high-impedance mode only during deselect, OE HIGH, or simultaneous BHE/ BLE HIGH-never during valid write cycles.
CY621472E30LL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY621472E30LL-45ZSXI FAQ
1.How can I place an order for CY621472E30LL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY621472E30LL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY621472E30LL-45ZSXI reliable?
The price and inventory of CY621472E30LL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY621472E30LL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY621472E30LL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY621472E30LL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY621472E30LL-45ZSXI?
CY621472E30LL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY621472E30LL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY621472E30LL-45ZSXI?
For technical support, including CY621472E30LL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY621472E30LL-45ZSXI requirements.
6.How does Aetrix verify that CY621472E30LL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY621472E30LL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY621472E30LL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY621472E30LL-45ZSXI?
All CY621472E30LL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY621472E30LL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY621472E30LL-45ZSXI part is unused and in its original packaging.
Return procedure for CY621472E30LL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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