Infineon Technologies CY621472EV30LL-45ZSXI

Overview

CY621472EV30LL-45ZSXI from Cypress Semiconductor is a 4-Mbit (256 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, industrial temperature range (–40 °C to +85 °C), and ultra-low standby current (max 7 μA). It implements byte power-down via BHE/ BLE controls and automatic CE-based power-down for battery-sensitive portable systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY621472EV30LL-45ZSXI datasheet, CY621472EV30LL-45ZSXI pinout, CY621472EV30LL-45ZSXI application, or CY621472EV30LL-45ZSXI equivalent, key selection criteria include 45 ns read cycle timing, dual chip enable (CE1/CE2) logic, 16-bit bidirectional I/O bus with independent high/low byte control, and data retention down to 1.5 V.

Technical Context

This SRAM uses complementary metal oxide semiconductor (CMOS) process technology to achieve optimal balance of speed and power. Its architecture supports full 256K × 16 memory mapping with address pins A0–A17, and implements three independent power-down modes: CE-driven (CE1 HIGH or CE2 LOW), byte-enable driven (BHE and BLE both HIGH), and write-active high-impedance state.

Read and write operations are controlled by synchronous assertion of CE1/CE2, OE, WE, and BHE/ BLE signals, with timing validated across 45 ns cycle time at VCC = 2.2–3.6 V. Output drivers support 0.4 V VOL at 2.1 mA and 2.4 V VOH at –1.0 mA under 2.7–3.6 V conditions.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), lead-free, surface-mountable with standard 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and AS6C4008-45TIN, the CY621472EV30LL-45ZSXI uniquely delivers 2.2 V operation, dual CE logic for expandability, and true per-byte power gating-making it optimal for new portable and industrial designs requiring minimal power and maximal interface flexibility.

Availability

CY621472EV30LL-45ZSXI is available at Aetrix Electronics and suitable for cellular handset baseband, industrial PLC data buffering, and portable medical monitor applications requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.

Supply support for CY621472EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and consumer markets.

The MoBL® (More Battery Life) SRAM product line was specifically engineered for ultra-low-power portable electronics, emphasizing sub-μA standby, wide VCC tolerance, and rapid power-state transitions without sacrificing speed.

FAQ

What is the minimum VCC required to retain data in CY621472EV30LL-45ZSXI?

The device guarantees data retention down to 1.5 V VCC, verified across the full industrial temperature range. At this voltage, ICCDR remains ≤7 μA, and tCDR (chip deselect to data retention entry) is instantaneous-no delay required. This enables use with backup coin cells or supercapacitors during main supply interruption.

How does the dual CE (CE1/CE2) logic improve memory expansion?

CE1 and CE2 implement active-LOW/active-HIGH pairing: the device selects only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding-e.g., using one address bit to drive CE2 across multiple SRAMs while sharing CE1 globally-reducing external gate count and propagation delay in multi-chip memory banks.

Can CY621472EV30LL-45ZSXI operate reliably at 2.2 V with 45 ns timing?

Yes. All AC specifications-including tRC = 45 ns, tAA = 45 ns, and tWC = 45 ns-are guaranteed over the full 2.2–3.6 V range and –40 °C to +85 °C temperature span. The datasheet's "45 ns" speed grade applies explicitly at VCC = 2.2 V, not just at nominal 3.3 V.

What happens to I/O pins during write operations?

During active write (CE1 = LOW, CE2 = HIGH, WE = LOW), all I/O0–I/O15 pins become inputs regardless of OE or BHE/ BLE state. They enter high-impedance only when deselected (CE1 HIGH or CE2 LOW), OE HIGH, or both BHE and BLE HIGH-never during valid write cycles.