Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY621472G30-45ZSXI

Part No.:
CY621472G30-45ZSXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY621472G30-45ZSXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:270

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY621472G30-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2 V–3.6 V supply. It features dual chip enables (CE1/CE2), byte-level write control (BHE/BLE), TTL-compatible I/Os, and an ERR output for real-time ECC event indication. Used in industrial embedded controllers requiring data integrity under voltage fluctuation or radiation-prone environments.

For engineers reviewing the CY621472G30-45ZSXI datasheet, CY621472G30-45ZSXI pinout, CY621472G30-45ZSXI application, or CY621472G30-45ZSXI equivalent, this page delivers verified package mapping (44-pin TSOP II), ECC functional behavior, dual CE timing constraints, standby current specs (≤8.7 µA), and direct substitution guidance against functionally matched SRAMs with ECC support.

Technical Context

This SRAM implements a synchronous, address-decoded memory array with integrated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without automatic write-back. The dual CE architecture requires CE1 = LOW and CE2 = HIGH for device selection, decoupling chip enable from output enable timing.

Byte power-down is triggered when both BHE and BLE are deasserted, forcing immediate transition to ultra-low ISB2 standby mode (≤8.7 µA) regardless of CE state. The ERR pin asserts HIGH only during active read cycles where a correctable error is found - it does not latch or indicate uncorrectable multi-bit errors.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size4 Mbit (256K words × 16-bit) - supports 32 KB of wide-data buffer storage with ECC protection per word
Access Time45 ns - guarantees deterministic read latency at max frequency (22.22 MHz) under 2.2–3.6 V operation
Supply Voltage Range2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails without level-shifting
Standby CurrentMax 8.7 µA - enables battery-backed retention in always-on industrial nodes
ECC FunctionSingle-bit error correction + detection - corrects bit flips in memory array without software intervention
ERR Pin BehaviorActive-HIGH pulse during read cycle on correction - provides hardware-observable fault signal for logging or recovery
Operating Temperature–40 °C to +85 °C - qualified for industrial-grade thermal cycling and long-term reliability

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, lead-free, body size 10.16 mm × 18.4 mm × 1.2 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; A12–A17 used for row decode, A0–A11 for column
I/O0–I/O15Bidirectional Data Bus16-bit parallel interface; high-impedance when deselected or OE/BLE/BHE inactive
CE1, CE2Dual Chip Enable InputsDevice selected only when CE1 = LOW and CE2 = HIGH; enables hierarchical memory banking
OEOutput EnableControls data bus drive; read data appears only when OE is asserted LOW after address setup
WEWrite EnableInitiates write cycle when LOW; latches data on rising edge of WE if timing conditions met
BHE, BLEByte Enable ControlsBHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7); both LOW forces standby
ERRError Indication OutputOpen-drain output asserted HIGH only during read cycle when ECC corrects a single-bit error
VCC, VSSPower and GroundSeparate VCC (pin 34, 11) and VSS (pin 33, 12) pins reduce switching noise; dual VCC/VSS pair improves PSRR

Key Features

Feature Design Value
Embedded ECC engineHardware-accelerated single-bit error correction per 16-bit word, eliminating need for external error-handling firmware
Byte Power-down modeAutomatic entry into ≤8.7 µA standby when BHE and BLE are both inactive - no external control logic required
Dual CE architectureEnables seamless integration into multi-chip memory maps with independent chip select routing
TTL-compatible signalingDirect interface with legacy microcontrollers and FPGAs without level shifters across 2.2–3.6 V range
ERR status pinHardware flag for ECC events - supports real-time diagnostics, error logging, or fail-safe shutdown triggers

Applications

Industrial PLC Memory Buffer Medical Imaging Frame Store

Use Scenario: Real-time I/O data buffering in programmable logic controllers with extended uptime requirements.

IC Role / Device Role / Timing Role: Primary working memory for cyclic scan buffers, holding sensor inputs and actuator outputs with ECC-protected integrity.

Use Value: Prevents silent data corruption in long-duration control loops; ERR pin enables predictive maintenance alerts before accumulated errors impact safety logic.

Use Scenario: Temporary frame storage in portable ultrasound or X-ray systems where power interruption risk exists.

IC Role / Device Role / Timing Role: High-speed, low-power SRAM staging buffer between ADC/DAC and FPGA processing pipeline.

Use Value: 45 ns access ensures real-time pixel streaming; 1.0-V data retention allows graceful suspend-to-RAM during battery switchover.

Avionics Data Logger Smart Grid RTU Cache

Use Scenario: Non-volatile event capture in flight data recorders exposed to temperature extremes and EMI.

IC Role / Device Role / Timing Role: ECC-protected scratchpad memory for timestamped telemetry packets prior to flash write.

Use Value: SER FIT rate <0.1 FIT/Mb meets DO-254 DAL-B requirements; dual CE supports redundant memory arbitration schemes.

Use Scenario: Local cache in remote terminal units managing distributed grid sensors and breaker controls.

IC Role / Device Role / Timing Role: Low-leakage SRAM holding configuration tables and last-known-state registers during brownout events.

Use Value: 8.7 µA max ISB2 extends backup battery life >72 hours; TSOP II package supports conformal coating for outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV25616BLL-45NLINo embedded ECC; requires external error handling or software parity; 45 ns access, same 256K×16 organizationLacks hardware error reporting; unsuitable for safety-critical logging without added validation layerSelect only if ECC is implemented at system level and cost sensitivity outweighs reliability assurance
Micron MT45W8MW16BGX-45IT:DIncludes ECC but uses different pinout (54-ball BGA); supports 1.8 V only; no ERR pin; higher standby current (15 µA)Requires PCB redesign; lacks real-time error visibility; better suited for space-constrained consumer designsChoose when footprint reduction is primary and diagnostic transparency is secondary

Compared with IS62WV25616BLL-45NLI and MT45W8MW16BGX-45IT:D, CY621472G30-45ZSXI uniquely combines pin-compatible TSOP II packaging, hardware ERR signaling, and sub-10 µA industrial-grade standby - enabling drop-in ECC assurance without layout or firmware changes.

Availability

CY621472G30-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and avionics data loggers requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.

Supply support for CY621472G30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

CY621472G30-45ZSXI belongs to the MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-power, high-reliability embedded systems where data integrity, fast access, and extended temperature operation are mandatory.

FAQ

Does CY621472G30-45ZSXI support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to the memory array. Corrected data is presented on I/O lines, and any persistent correction must be handled by external logic or firmware. This design avoids unintended writes during transient faults and maintains deterministic timing.

What is the function of the ERR pin, and when does it assert?

The ERR pin is an open-drain output that asserts HIGH only during the active portion of a read cycle when a single-bit error is detected and corrected in the accessed 16-bit word. It returns LOW after the read cycle completes and does not latch. It is not active during writes, standby, or deselect states.

Can CY621472G30-45ZSXI operate at 1.8 V?

No. This variant is specified only for the 2.2 V–3.6 V VCC range. While some MoBL devices support 1.65 V–2.2 V, CY621472G30-45ZSXI's speed grade (45 ns) and internal logic are characterized and guaranteed exclusively within 2.2–3.6 V. Operation below 2.2 V may result in timing violations or ECC failure.

Is the 44-pin TSOP II package RoHS-compliant and lead-free?

Yes. The "Z" in CY621472G30-45ZSXI denotes lead-free (Pb-free) construction, and the "SXI" suffix confirms industrial temperature grade (–40 °C to +85 °C) and TSOP II packaging. All materials comply with EU RoHS Directive 2011/65/EU and Infineon's substance restrictions policy.

CY621472G30-45ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY621472G30-45ZSXI FAQ

1.How can I place an order for CY621472G30-45ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY621472G30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY621472G30-45ZSXI reliable?

The price and inventory of CY621472G30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY621472G30-45ZSXI is usually 5 days.

3.What payment methods are accepted for CY621472G30-45ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY621472G30-45ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY621472G30-45ZSXI?

CY621472G30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY621472G30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY621472G30-45ZSXI?

For technical support, including CY621472G30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY621472G30-45ZSXI requirements.

6.How does Aetrix verify that CY621472G30-45ZSXI is sourced from the original manufacturer or authorized distributors?

All CY621472G30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY621472G30-45ZSXI meets industry standards.

7.What is the process for return or replacement of CY621472G30-45ZSXI?

All CY621472G30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY621472G30-45ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY621472G30-45ZSXI part is unused and in its original packaging.

Return procedure for CY621472G30-45ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY621472G30-45ZSXI Tags

  • CY621472G30-45ZSXI
  • CY621472G30-45ZSXI PDF
  • CY621472G30-45ZSXI Datasheet
  • CY621472G30-45ZSXI Specifications
  • CY621472G30-45ZSXI Images
  • Infineon Technologies
  • Infineon Technologies CY621472G30-45ZSXI
  • Buy CY621472G30-45ZSXI
  • CY621472G30-45ZSXI Price
  • CY621472G30-45ZSXI Distributor
  • CY621472G30-45ZSXI Supplier
  • CY621472G30-45ZSXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER