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Infineon Technologies CY621472GN30-45ZSXI
- Part No.:
- CY621472GN30-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY621472GN30-45ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,690
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Product details
Overview
CY621472GN30-45ZSXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with dual chip enable (CE1/CE2), 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current of 3.5 µA typical. It supports byte-wide write control via BHE/BLE and operates across industrial temperature (–40 °C to +85 °C), targeting embedded memory buffers in portable instrumentation and real-time data logging systems.
For engineers reviewing the CY621472GN30-45ZSXI datasheet, CY621472GN30-45ZSXI pinout, CY621472GN30-45ZSXI application, or CY621472GN30-45ZSXI equivalent, this page delivers verified package mapping (44-pin TSOP II), functional pin roles, byte-select power-down behavior, voltage-flexible operation, and direct alternatives for memory subsystem redesign.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with independent upper/lower byte write enable (BHE/BLE) and dual CE logic requiring CE1 = LOW and CE2 = HIGH for activation. Its architecture enables seamless automatic transition to standby mode when both BHE and BLE are deasserted - regardless of CE state - delivering guaranteed 3.5 µA typical ISB2 at 25 °C under 2.2–3.6 V.
It supports TTL-compatible I/O signaling across all three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), with output drive strength scaled per voltage: 2.4 V VOH min at 2.7–3.6 V, 0.4 V VOL max at same range, and input thresholds defined per band (e.g., VIH ≥ 2.0 V at 2.7–3.6 V). Data retention is maintained at 1.0 V with no active supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16 bits) - provides 512 KB of fast, random-access storage without refresh circuitry |
| Access Time | 45 ns - enables reliable interface with 22.22 MHz bus clocks in high-speed microcontroller or FPGA memory subsystems |
| VCC Range | 2.2 V to 3.6 V - compatible with modern 3.3 V and mixed-voltage SoC domains while supporting brown-out tolerance down to 2.2 V |
| Standby Current | 3.5 µA typical / 8.7 µA max at 85 °C - enables multi-year battery operation in always-on sensor nodes |
| Data Retention Voltage | 1.0 V - allows memory contents to persist during deep sleep or backup-battery modes without full VCC |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade deployment in automotive ECUs and factory automation controllers |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifter requirements when interfacing with legacy 3.3 V or 5 V logic families |
Pinout & Package
Package: 44-pin TSOP II (Type II, 400 mil width), RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selecting one of 256K memory locations; A17 is MSB |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted to enable device; enables hierarchical memory decoding |
| WE | Write Enable | Active-Low signal initiating write cycle; latches data on rising edge of WE when CE and OE are valid |
| OE | Output Enable | Active-Low control enabling read data onto I/O lines; HI-Z when deasserted |
| BHE, BLE | Byte High/Low Enable | Independent write gating for upper/lower bytes; both disabled triggers automatic standby mode |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply rail; separate VSS pins provide noise isolation for address/data paths |
Key Features
| Feature | Design Value |
|---|---|
| Byte Power Down | Automatic entry into ultra-low-power standby (< 10 µA) when BHE and BLE are both inactive - no external control logic required |
| Multi-Voltage Operation | Single device supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - reduces BOM count across product variants |
| Industrial Temperature Range | Guaranteed functionality from –40 °C to +85 °C - suitable for under-hood automotive modules and outdoor IoT gateways |
| TTL-Compatible I/O | Direct interface with 3.3 V and 5 V microcontrollers without level translation - simplifies PCB layout and timing closure |
| 1.0 V Data Retention | Preserves stored values during brown-out or backup-battery operation - critical for fault-logging and state recovery |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Real-time acquisition and temporary storage of ECG waveforms before wireless transmission or local display. IC Role / Device Role / Timing Role: High-speed, low-power SRAM buffer between ADC and ARM Cortex-M4 processor; handles burst writes at 10 kSPS with deterministic 45 ns latency. Use Value: Enables continuous 24-hour waveform capture on coin-cell battery using 3.5 µA standby current and 1.0 V data retention during sleep cycles. | Use Scenario: Cyclic buffering of sensor inputs (temperature, pressure, flow) in modular I/O expansion racks. IC Role / Device Role / Timing Role: Dual-port accessible memory for simultaneous read-by-PLC CPU and write-by-fieldbus controller; CE1/CE2 supports priority arbitration. Use Value: Eliminates external glue logic via built-in byte-enable power-down and TTL-compatible signaling - reducing board area and qualification effort. |
| Automotive ADAS Logging | Smart Energy Metering |
Use Scenario: Crash-event pre-buffering in front-end camera modules, capturing 2 seconds of video metadata prior to trigger. IC Role / Device Role / Timing Role: Low-latency SRAM acting as circular buffer for timestamped CAN message headers and image ROI coordinates. Use Value: Guarantees data integrity during ignition transients via 1.0 V retention and withstands under-hood thermal stress (–40 °C to +85 °C). | Use Scenario: Tamper-resistant energy consumption history storage in Class 0.5S revenue meters with 10-year battery life. IC Role / Device Role / Timing Role: Non-refreshing memory storing billing intervals, tariff schedules, and cryptographic keys - accessed only during meter wake-up events. Use Value: Achieves >9-year operational life using 3.5 µA typical ISB2 and automatic byte-power-down triggered by infrequent read/write bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-45MLI | 45 ns access, 2.5–3.6 V only, no 1.0 V retention, 12 µA ISB typical | Lacks dual-VCC support and deep-retention capability; requires external voltage supervisor for brown-out handling | Select when system uses fixed 3.3 V rail and does not require sub-2.2 V operation or 1.0 V data hold |
| AS6C4008-45TIN | 45 ns, 2.7–3.6 V, 256K × 16, 15 µA ISB typical, no byte-power-down feature | No automatic standby on BHE/BLE disable; requires external logic or firmware to manage power state transitions | Choose for cost-sensitive designs where firmware-controlled power management is acceptable and 3.3 V supply is stable |
Compared with IS62WV25616BLL-45MLI and AS6C4008-45TIN, CY621472GN30-45ZSXI uniquely combines triple-voltage support, 1.0 V data retention, and hardware-triggered byte-power-down - reducing system-level power design complexity and qualifying for wider industrial thermal and supply envelopes.
Availability
CY621472GN30-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive ADAS logging requiring stable component supply, long-lifecycle assurance, and industrial-temperature qualification.
Supply support for CY621472GN30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply stability.
CY621472GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-powered and thermally constrained embedded systems requiring fast, deterministic, and ultra-low-quiescent memory access.
FAQ
What is the function of the dual chip enable (CE1/CE2) inputs on CY621472GN30-45ZSXI?
CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) to enable the device. This configuration supports hierarchical memory decoding in multi-chip systems and prevents partial addressing glitches that could occur with single-CE architectures during bus contention.
Does CY621472GN30-45ZSXI support true 1.8 V operation?
No - the 1.65–2.2 V VCC range applies only to the CY62147GN18 variant. CY621472GN30-45ZSXI is rated for 2.2–3.6 V operation; applying 1.8 V violates its absolute maximum rating and will result in undefined behavior or failure to meet timing specifications.
How does the Byte Power Down feature reduce system power consumption?
When both BHE and BLE are deasserted (HIGH), the device automatically enters standby mode drawing ≤8.7 µA - even if CE1/CE2 remain asserted. This eliminates the need for external power-gating circuitry or firmware polling, making it ideal for intermittent-data-acquisition systems like smart meters and sensor nodes.
Can CY621472GN30-45ZSXI be used with a 5 V microcontroller interface?
No - its absolute maximum VCC is 3.6 V, and I/O tolerances are not 5 V tolerant. Direct connection to 5 V logic will damage the device. A level-shifting solution (e.g., TXB0108 or discrete MOSFET translator) is required for interoperability with 5 V controllers.
CY621472GN30-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY621472GN30-45ZSXI FAQ
1.How can I place an order for CY621472GN30-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY621472GN30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY621472GN30-45ZSXI reliable?
The price and inventory of CY621472GN30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY621472GN30-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY621472GN30-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY621472GN30-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY621472GN30-45ZSXI?
CY621472GN30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY621472GN30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY621472GN30-45ZSXI?
For technical support, including CY621472GN30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY621472GN30-45ZSXI requirements.
6.How does Aetrix verify that CY621472GN30-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY621472GN30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY621472GN30-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY621472GN30-45ZSXI?
All CY621472GN30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY621472GN30-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY621472GN30-45ZSXI part is unused and in its original packaging.
Return procedure for CY621472GN30-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY621472GN30-45ZSXI Tags
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