Infineon Technologies CY621472GN30-45ZSXIT

Overview

CY621472GN30-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It features dual chip enable (CE1/CE2), byte-level write control via BHE/ BLE, and TTL-compatible I/Os - deployed in industrial embedded systems requiring fast, deterministic memory access with minimal power draw during sleep.

For engineers reviewing the CY621472GN30-45ZSXIT datasheet, CY621472GN30-45ZSXIT pinout, CY621472GN30-45ZSXIT application, or CY621472GN30-45ZSXIT equivalent, this page delivers verified package mapping (44-pin TSOP II), functional pin roles, real-world timing behavior, byte-select power-down operation, and validated alternatives for SRAM migration or second-source planning.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with full address decoding (A0–A17), 16-bit bidirectional I/O bus (I/O0–I/O15), and independent byte write enables (BHE for upper byte, BLE for lower byte). Its dual CE architecture requires CE1 = LOW and CE2 = HIGH for activation, enabling hierarchical memory banking in multi-chip systems.

The device supports automatic power-down when both BHE and BLE are deasserted - a hardware-controlled state transition that bypasses CE logic and reduces ISB2 to 3.5 µA at 25 °C, independent of chip enable status. Data retention operates down to 1.0 V, supporting brown-out resilience without external backup power.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, lead-free, 400 mil body width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with AS6C4008-55TIN and IS62WV25616BLL-45NLI, CY621472GN30-45ZSXIT uniquely delivers 45 ns speed *plus* 3.5 µA standby *plus* dual CE *plus* 1.0 V retention - making it the only option for battery-constrained industrial logging where all four parameters are simultaneously required.

Availability

CY621472GN30-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical data loggers, automotive body control modules, and POS terminal transaction caches requiring stable component supply across extended product lifecycles.

Supply support for CY621472GN30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.

CY621472GN belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line - engineered specifically for battery-operated and thermally constrained embedded systems requiring fast, deterministic memory access with sub-µA standby behavior.

FAQ

What is the minimum VCC required to retain data in CY621472GN30-45ZSXIT?

Data retention is guaranteed down to 1.0 V VCC, as specified in the "Data Retention Characteristics" section of the datasheet (Document Number 002-10624 Rev. *D, Page 9). This applies across the full industrial temperature range (–40 °C to +85 °C) and does not require external bias or refresh - the memory contents remain valid as long as VCC stays ≥1.0 V, even with all control signals inactive.

Does CY621472GN30-45ZSXIT support true dual-byte write operations?

Yes - BHE and BLE operate independently: asserting BHE = LOW writes I/O8–I/O15, asserting BLE = LOW writes I/O0–I/O7, and asserting both LOW performs a full 16-bit write. The device does not require simultaneous assertion; either byte can be updated without affecting the other, and the unused byte retains its prior value.

Can CY621472GN30-45ZSXIT be used with a 2.5 V microcontroller having 2.0 V VIH?

Yes - at VCC = 2.5 V, the datasheet specifies VIH(min) = 1.8 V (Page 6, DC Electrical Characteristics table), which is below the microcontroller's 2.0 V output HIGH level. This ensures robust logic recognition without level shifters, provided trace lengths are controlled to limit noise-induced margin loss.

Is the 44-pin TSOP II package of CY621472GN30-45ZSXIT pin-compatible with CY62147GN30-45ZSI?

No - CY62147GN30-45ZSI uses single CE (pin 39 = /CE), whereas CY621472GN30-45ZSXIT uses dual CE (pin 39 = /CE1, pin 29 = CE2). Pin 29 is NC on the single-CE variant but functionally assigned on CY621472GN. Direct replacement requires PCB layout modification to route CE2 and adjust address/data pin assignments per Figures 3 and 4 in the datasheet.