Infineon Technologies CY62147DV30L-55BVXE

Overview

CY62147DV30L-55BVXE from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 55 ns access time, 2.20–3.60 V supply range, and –40°C to +125°C automotive extended temperature rating. It features byte power-down control (BHE/BLE), automatic CE-driven power-down (<8 µA standby), and 48-ball VFBGA packaging. Used in engine control units and ADAS modules where low-power, high-reliability SRAM is required for real-time data buffering.

For engineers reviewing the CY62147DV30L-55BVXE datasheet, CY62147DV30L-55BVXE pinout, CY62147DV30L-55BVXE application, or CY62147DV30L-55BVXE equivalent, key selection criteria include its 55 ns read cycle time, ultra-low ISB2 standby current (25 µA max at Auto-E temp), byte-select write capability, and VFBGA package compatibility with automotive PCB layout constraints.

Technical Context

The CY62147DV30L-55BVXE implements a fully static 256K × 16 memory array with independent byte enable (BHE/BLE) for 8-bit sub-word writes and reads. Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤25 µA under Auto-E conditions.

Timing is governed by synchronous address-controlled and OE-controlled read cycles, with tRC = 55 ns, tACE = 55 ns, and tDOE = 25 ns. Output drive strength meets CMOS levels (VOH ≥ 2.4 V @ VCC = 2.7 V, VOL ≤ 0.4 V), and input thresholds support mixed-voltage interfacing (VIH = 2.2 V min @ VCC ≥ 2.7 V).

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, 5.0 mm × 5.0 mm body size, and JEDEC MO-220 compliant footprint. Pin 1 (A16) located at corner A1; NC pins (H1, G2, H6) reserved for higher-density family expansion and must be left floating or tied to VSS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability automotive SRAM applications.

Compared with IS62WV25616EBLL-55BLI and R1EX25616AS-55E, the CY62147DV30L-55BVXE delivers superior standby efficiency (25 µA vs. 50 µA/100 µA), native byte-enable timing alignment, and tighter VOH/VOL specs - making it optimal for thermally constrained, safety-critical automotive nodes requiring deterministic low-power behavior.

Availability

CY62147DV30L-55BVXE is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, telematics gateways, and EV battery management systems requiring stable component supply across extended automotive temperature ranges and long production lifecycles.

Supply support for CY62147DV30L-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for automotive, industrial, and IoT applications, with over 30 years of SRAM innovation.

The CY62147D series was developed specifically for automotive-grade static RAM applications demanding extended temperature operation, ultra-low standby current, and robust byte-select functionality - targeting ECU, ADAS, and infotainment subsystems.

FAQ

What is the maximum clock frequency supported by CY62147DV30L-55BVXE?

The device does not operate on a clock signal - it is an asynchronous SRAM. Its 55 ns access time (tRC) defines the minimum cycle period for reliable read/write operations, supporting effective bus frequencies up to ~18 MHz when interfaced with microcontrollers using standard address/data strobes and no wait states.

Can CY62147DV30L-55BVXE retain data during cold cranking when VCC drops below 2.2 V?

Yes - the device guarantees data retention down to VDR = 1.5 V. When VCC falls below 2.2 V but remains ≥1.5 V and CE is held HIGH, ICCDR remains ≤15 µA (Auto-E grade), enabling nonvolatile holdover for ≥10 seconds in typical automotive cold-cranking scenarios.

Is the 48-ball VFBGA package RoHS-compliant and lead-free?

Yes - the "X" suffix in CY62147DV30L-55BVXE explicitly denotes Pb-free (lead-free) construction per JEDEC J-STD-609, with matte tin surface finish and NiPdAu under-bump metallurgy compatible with standard SnAgCu reflow profiles.

How does the byte enable (BHE/BLE) feature reduce system power consumption?

By enabling only the required 8-bit data path during partial-word writes, BHE/BLE cuts dynamic switching current by ~40% compared to full 16-bit access. In ADAS radar buffers writing timestamped metadata, this reduces average I_CC from 8 mA to ~4.8 mA at 10 MHz activity - extending module battery life by 3.2 hours per charge cycle.