Infineon Technologies CY62147DV30LL-70BVXA

Overview

CY62147DV30LL-70BVXA from Cypress Semiconductor is a 4-Mbit (256K × 16) low-voltage CMOS static RAM with 70 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features byte power-down control (BHE/BLE), automatic CE-based power-down, and ultra-low standby current (8 µA). Used in portable embedded systems requiring battery-efficient memory retention, such as handheld instrumentation and industrial data loggers.

For engineers reviewing the CY62147DV30LL-70BVXA datasheet, CY62147DV30LL-70BVXA pinout, CY62147DV30LL-70BVXA application, or CY62147DV30LL-70BVXA equivalent, key selection criteria include 70 ns read cycle time, dual-byte enable architecture, VFBGA-48 package compatibility, and MoBL®-optimized active/standby current specs (1.5 mA @ 1 MHz / 8 µA ISB2).

Technical Context

The CY62147DV30LL-70BVXA implements a synchronous, non-volatile-retentive SRAM array with full address decoding (A0–A17), independent high- and low-byte write enables (BHE/BLE), and tri-state I/O drivers (I/O0–I/O15). Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤8 µA.

It supports multiple read/write modes: OE-controlled reads, WE-controlled writes, and byte-selectable writes. Timing is defined by tRC = 70 ns, tAA = 70 ns, and tDOE = 35 ns, with input thresholds compliant to CMOS levels across 2.2–3.6 V VCC and guaranteed operation at –40°C to +85°C.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-70NLI, CY62147DV30LL-70BVXA delivers 40% lower active current at 2.5 V and broader voltage flexibility; versus CY62147EV30LL-70BVXI, it trades automotive qualification for lower cost in industrial-only deployments.

Availability

CY62147DV30LL-70BVXA is available at Aetrix Electronics and suitable for portable medical sensors, industrial data loggers, and smart meter communication modules requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for CY62147DV30LL-70BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer applications.

The CY62147D series targets battery-sensitive embedded systems needing low-voltage, low-power SRAM with byte-level control - optimized for MoBL® (More Battery Life™) portable and edge-sensing applications.

FAQ

What is the maximum clock frequency supported for continuous read operations?

The CY62147DV30LL-70BVXA does not use a clock; it is an asynchronous SRAM. Its 70 ns read cycle time (tRC) implies a maximum sustained read rate of ~14.3 MHz on a 16-bit bus. Timing is governed by address setup/hold and CE/OE assertion, not a system clock. No external clock signal is required or supported.

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes - asserting both BHE and BLE LOW while CE and WE are LOW enables simultaneous write to I/O0–I/O7 and I/O8–I/O15, effectively performing a full 16-bit write. The device treats this as two concurrent byte writes to the same address, matching standard 16-bit SRAM behavior without requiring external byte masking.

Is the VFBGA-48 package compatible with reflow soldering per IPC-J-STD-020?

Yes - the CY62147DV30LL-70BVXA in VFBGA-48 is qualified for standard lead-free reflow profiles (peak 260°C, 60–90 sec above 217°C). Thermal resistance ΘJA = 72°C/W (still air) confirms suitability for convection-reflow processes on four-layer boards with appropriate thermal relief and stencil design.

Does the device retain data when VCC drops below 2.2 V but remains above VDR = 1.5 V?

Yes - data retention is guaranteed down to VDR = 1.5 V, provided CE is held HIGH or both BHE and BLE are HIGH to enter power-down mode. At VCC = 1.5 V, ICCDR is 6 µA (LL grade), enabling multi-day retention on small backup capacitors or primary batteries nearing end-of-life.