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Infineon Technologies CY62147DV30LL-70BVXAT
- Part No.:
- CY62147DV30LL-70BVXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147DV30LL-70BVXAT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,893
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Product details
Overview
CY62147DV30LL-70BVXAT from Cypress Semiconductor is a 4-Mbit (256K × 16) CMOS static RAM with 70 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40°C to +85°C). It features byte power-down control via BHE/ BLE, automatic CE-based power-down, and ultra-low standby current (8 µA). Used in portable embedded systems requiring low-power, non-volatile data buffering during sleep modes.
For engineers reviewing the CY62147DV30LL-70BVXAT datasheet, CY62147DV30LL-70BVXAT pinout, CY62147DV30LL-70BVXAT application, or CY62147DV30LL-70BVXAT equivalent, key selection criteria include 70 ns read cycle time, dual-byte enable architecture, VFBGA-48 package compatibility, and sub-10 µA ISB2 standby current under CE HIGH conditions.
Technical Context
The CY62147DV30LL-70BVXAT implements a synchronous, non-multiplexed address interface with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without disturbing adjacent bytes. Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤8 µA.
It supports true static operation-no refresh required-and uses CMOS-compatible input thresholds (VIH = 1.8 V min at VCC = 2.2 V; VIL = 0.6 V max). Output drive strength meets IOL = 2.1 mA / IOH = –1.0 mA at VCC = 2.7 V, with 10 pF load capacitance specified for AC timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 16-bit (4 Mbit total); enables 16-bit parallel data bus interfacing without external demultiplexing. |
| Access Time (tRC) | 70 ns maximum; guarantees deterministic read latency for real-time firmware execution in microcontroller co-processor buffers. |
| VCC Range | 2.20 V to 3.60 V; compatible with single-supply 2.5 V or 3.3 V logic domains and battery-backed systems down to 2.2 V. |
| ISB2 Standby Current | 8 µA typical at VCC = 3.6 V; reduces system-level quiescent power by >99% versus active mode (ICC = 8 mA @ fmax). |
| Operating Temperature | –40°C to +85°C (Industrial grade); validated for use in industrial HMI, metering, and automotive body-control modules. |
| Package | 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA); 5.0 mm × 6.0 mm footprint with 0.5 mm ball pitch for high-density PCB layout. |
| Input Leakage (IIX) | ±1 µA max at TA = 85°C; ensures reliable signal integrity in high-impedance address/data bus environments. |
Pinout & Package
Package: 48-ball VFBGA (5.0 mm × 6.0 mm, 0.5 mm pitch), RoHS-compliant, lead-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required. |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; isolated from high byte during partial writes. |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; allows independent high/low byte access. |
| CE | Chip Enable | Active-LOW global select; forces device into automatic power-down (ISB2) when HIGH, disabling all outputs. |
| OE | Output Enable | Active-LOW read control; places I/O pins in high-impedance state when HIGH, even if CE is LOW. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle only when CE and WE are both LOW and BHE/BLE assert byte selection. |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; enables low-byte write/read without affecting I/O8–I/O15. |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables high-byte access independent of low-byte state. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low standby power | 8 µA ISB2 current enables multi-year battery life in always-on sensor nodes and backup SRAM applications. |
| Dual independent byte enables | BHE/BLE allow granular 8-bit writes-critical for efficient register-mapped peripheral buffering without full-word overwrites. |
| Automatic CE power-down | Hardware-triggered transition to <10 µA mode on CE HIGH eliminates software overhead for power-state management. |
| Wide VCC tolerance (2.2–3.6 V) | Supports direct connection to Li-ion battery rails (2.7–3.6 V) or regulated 2.5 V domains without level-shifting. |
| 70 ns read cycle with 10 pF load | Meets timing closure for 14 MHz bus interfaces (tRC = 70 ns → max 14.3 MHz sustained throughput). |
Applications
| Portable Medical Monitor Buffer | Industrial PLC Data Cache |
|---|---|
|
Use Scenario: Real-time ECG waveform acquisition with local buffering before USB/UART transmission. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding 256K samples at 16-bit resolution; accessed via MCU's parallel memory interface. Use Value: 70 ns access ensures zero-cycle-wait reads during burst transfers; 8 µA ISB2 extends battery runtime beyond 72 hours between charges. |
Use Scenario: Storing configuration registers and I/O state snapshots in modular automation controllers. IC Role / Device Role / Timing Role: Static memory mapped as peripheral address space; accessed during cyclic scan intervals with deterministic latency. Use Value: Dual-byte enables permit atomic updates to 8-bit status flags without corrupting adjacent 16-bit control words. |
| Automotive Body Control Module | Smart Meter Firmware Stack |
|
Use Scenario: Retaining door lock status, lighting profiles, and fault logs across ignition cycles in Class A vehicle modules. IC Role / Device Role / Timing Role: Battery-backed SRAM holding critical NV data; powered from always-on 3.3 V rail with automatic power-down during sleep. Use Value: –40°C to +85°C rating and 2.2 V minimum VCC support reliable operation during cold cranking (battery dip to 2.4 V). |
Use Scenario: Caching tariff tables, consumption history, and cryptographic keys in ANSI C12.22-compliant utility meters. IC Role / Device Role / Timing Role: Secure, fast-access memory for time-critical decryption routines and real-time billing calculations. Use Value: 48-ball VFBGA package enables compact, thermally robust layout on heat-sensitive meter PCBs with minimal trace inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-70QLI | Same density (256K × 16), 70 ns speed, but 3.3 V only (3.0–3.6 V); no 2.2 V support. | Lacks wide-VCC flexibility; unsuitable for battery-droop scenarios below 3.0 V. | Select when system operates strictly at 3.3 V and cost sensitivity outweighs voltage margin needs. |
| AS6C4008-70PCN | 4-Mbit (512K × 8) organization; requires external byte merging for 16-bit interface; 70 ns, 2.7–3.6 V. | Needs additional logic or wider bus routing to emulate 256K × 16 behavior; increases board area and signal count. | Choose only if legacy 8-bit bus architecture prevents 16-bit SRAM integration. |
Compared with IS62WV25616BLL-70QLI and AS6C4008-70PCN, the CY62147DV30LL-70BVXAT uniquely delivers 2.2–3.6 V operation, true 256K × 16 organization, and integrated byte-enable logic-reducing external component count and enabling direct drop-in use in portable, battery-constrained designs.
Availability
CY62147DV30LL-70BVXAT is available at Aetrix Electronics and suitable for portable medical devices, industrial programmable logic controllers, and automotive body control modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY62147DV30LL-70BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and computing applications.
The CY62147D series targets low-power, high-speed SRAM applications in portable and embedded systems where battery life, timing predictability, and wide supply voltage tolerance are critical design constraints.
FAQ
What is the minimum VCC required to retain data in CY62147DV30LL-70BVXAT?
Data retention is guaranteed down to VDR = 1.5 V, with ICCDR = 6 µA typical at that voltage. The device enters data retention mode automatically when CE is HIGH and VCC ≥ 1.5 V, preserving contents without external refresh or clocking.
Can CY62147DV30LL-70BVXAT operate with asynchronous address transitions during read cycles?
Yes-the device supports address-transition-controlled reads (Read Cycle 1) where data becomes valid tAA = 70 ns after address stabilization. No external wait-state generation is needed for MCU interfaces meeting this setup/hold window.
Is the 48-ball VFBGA package of CY62147DV30LL-70BVXAT compatible with standard reflow profiles?
Yes-it is qualified for JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles with peak temperature ≤260°C and time above liquidus ≤60 seconds.
How does byte enable (BHE/BLE) affect power consumption during partial writes?
Asserting only BHE or BLE-while keeping the other HIGH-activates only the corresponding 8-bit I/O path, reducing dynamic switching current by ~50% versus full 16-bit writes, directly lowering ICC during frequent small-data updates.
CY62147DV30LL-70BVXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147DV30LL-70BVXAT FAQ
1.How can I place an order for CY62147DV30LL-70BVXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147DV30LL-70BVXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147DV30LL-70BVXAT reliable?
The price and inventory of CY62147DV30LL-70BVXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147DV30LL-70BVXAT is usually 5 days.
3.What payment methods are accepted for CY62147DV30LL-70BVXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147DV30LL-70BVXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147DV30LL-70BVXAT?
CY62147DV30LL-70BVXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147DV30LL-70BVXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147DV30LL-70BVXAT?
For technical support, including CY62147DV30LL-70BVXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147DV30LL-70BVXAT requirements.
6.How does Aetrix verify that CY62147DV30LL-70BVXAT is sourced from the original manufacturer or authorized distributors?
All CY62147DV30LL-70BVXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147DV30LL-70BVXAT meets industry standards.
7.What is the process for return or replacement of CY62147DV30LL-70BVXAT?
All CY62147DV30LL-70BVXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147DV30LL-70BVXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147DV30LL-70BVXAT part is unused and in its original packaging.
Return procedure for CY62147DV30LL-70BVXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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