Infineon Technologies CY62147EV18LL-45BVXIT

Overview

CY62147EV18LL-45BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) low-voltage CMOS static RAM with 45 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (1 µA typical). It implements byte-wide write control via BHE/BLE, automatic CE-driven power-down, and high-impedance I/O tri-state during deselect or write. It is used in battery-powered portable systems requiring fast, deterministic memory access with minimal quiescent power.

For engineers reviewing the CY62147EV18LL-45BVXIT datasheet, CY62147EV18LL-45BVXIT pinout, CY62147EV18LL-45BVXIT application, or CY62147EV18LL-45BVXIT equivalent, key selection criteria include guaranteed 45 ns read cycle timing at 1.65 V, dual-byte enable architecture for partial-word writes, VFBGA-48 package compatibility, and sub-µA data retention at 1.0 V.

Technical Context

The device uses a fully static CMOS cell architecture with separate byte-enable decoding for independent low/high 8-bit writes. Its power-down circuitry activates automatically when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤7 µA without external control logic.

Timing is defined by overlapping control signals: read data validity depends on tACE (CE LOW to output valid) and tDOE (OE LOW to output valid), while write completion is governed by tSCE (CE LOW to write end) and tBW (BLE/BHE LOW to write end), all specified at 45 ns maximum under worst-case voltage/temperature conditions.

Key Specifications

Pinout & Package

The CY62147EV18LL-45BVXIT is housed in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch and bottom-side thermal pad. Pin assignments follow JEDEC MO-249 standard layout for 48-ball VFBGA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616ASB-45SI, the CY62147EV18LL-45BVXIT uniquely delivers native byte-select capability at true 1.65 V operation and automatic CE power-down - critical for energy-constrained portable systems where partial-word writes and ultra-low quiescent current are mandatory.

Availability

CY62147EV18LL-45BVXIT is available at Aetrix Electronics and suitable for cellular baseband subsystems, portable medical data loggers, industrial handheld terminals, and wearable fitness trackers requiring stable component supply across extended product lifecycles.

Supply support for CY62147EV18LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, with expertise in memory, PSoC, USB, and timing products.

The CY62147EV18 belongs to the MoBL2™ family of low-voltage SRAMs engineered specifically for portable electronics requiring extended battery life, deterministic timing, and compact packaging - targeting space- and power-constrained applications.

FAQ

What is the minimum VCC required to retain data without corruption?

The CY62147EV18LL-45BVXIT guarantees data retention down to 1.0 V (VDR), as verified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA, and tCDR is 0 ns - meaning data is preserved immediately upon reaching VDR, with no delay or setup required. This enables reliable operation during deep battery discharge events.

Can BHE and BLE be used simultaneously for full 16-bit access?

Yes - asserting both BHE and BLE LOW enables full 16-bit read or write operations. The device's truth table confirms that when CE and WE are active, simultaneous activation of BHE and BLE places I/O0–I/O15 in active drive mode. No timing penalty or conflict occurs; tDBE applies identically to both byte lanes.

Is the VFBGA-48 package RoHS-compliant and lead-free?

Yes - the "VXIT" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish. Cypress documentation (Rev. *B, page 1) explicitly states "Pb-free VFBGA package", and JEDEC qualification data confirms compliance with J-STD-020D moisture sensitivity level 3 (MSL3) and reflow peak temperature of 260°C.

How does automatic power-down behave when CE is HIGH but OE is LOW?

When CE is HIGH, the device enters automatic power-down regardless of OE, WE, BHE, or BLE state. All I/O pins (I/O0–I/O15) go high-impedance, and ICC drops to ≤7 µA. OE being LOW has no effect - the CE-dominant power-down overrides all other controls, as stated in the Functional Description: "reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH)".