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Infineon Technologies CY62147EV18LL-55BVXI

Part No.:
CY62147EV18LL-55BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62147EV18LL-55BVXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,116

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Product details

Overview

CY62147EV18LL-55BVXI from Cypress Semiconductor is a 4-Mbit (256 K × 16) CMOS static RAM with 55 ns access time, 1.65 V to 2.25 V supply voltage, and ultra-low standby current (max 7 µA). It implements byte-wide write control via BHE/BLE, automatic power-down on deselect, and operates in industrial temperature range (–40 °C to +85 °C), targeting battery-constrained portable memory subsystems.

For engineers reviewing the CY62147EV18LL-55BVXI datasheet, CY62147EV18LL-55BVXI pinout, CY62147EV18LL-55BVXI application, or CY62147EV18LL-55BVXI equivalent, key selection criteria include VFBGA-48 package compatibility, 16-bit data bus interface, MoBL® low-power architecture, and CE/OE/BHE/BLE timing coordination for memory expansion in space- and energy-sensitive designs.

Technical Context

This SRAM uses complementary metal oxide semiconductor (CMOS) process technology to achieve optimal balance between speed and power. Its architecture supports independent high- and low-byte write enable (BHE/BLE), enabling selective 8-bit writes without read-modify-write cycles.

The device enters automatic power-down mode when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤7 µA. Output pins enter high-impedance state during deselect, OE HIGH, or active write-ensuring clean bus sharing in multi-device systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (256 K × 16) - provides 512 KB of byte-addressable storage with 16-bit parallel interface
Access Time55 ns - guarantees deterministic read latency for real-time embedded control loops
Supply Voltage1.65 V to 2.25 V - compatible with modern low-voltage SoC I/O domains and battery-powered operation
Standby CurrentMax 7 µA at VCC = 2.25 V - enables >1-year battery life in always-on sensor nodes
Active CurrentTyp 2 mA at f = 1 MHz - supports burst-mode operation with minimal thermal impact
Operating Temperature–40 °C to +85 °C - qualified for industrial-grade reliability in harsh environments
Data Retention VoltageMin 1.0 V - allows memory contents to persist during brown-out or sleep-state VCC scaling

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256 K-word addressing; A16/A17 used for higher-density variants
I/O0–I/O7Data Bus (Low Byte)Bi-directional 8-bit data path enabled by BLE LOW; isolated during high-Z states
I/O8–I/O15Data Bus (High Byte)Bi-directional 8-bit data path enabled by BHE LOW; independently controllable from low byte
CEChip EnableActive-LOW global select; forces all outputs to high-Z and initiates automatic power-down when HIGH
OEOutput EnableActive-LOW read strobe; disables output drivers without affecting internal state or power mode
WEWrite EnableActive-LOW write strobe; latches data on rising edge when CE and byte enables are asserted
BLEByte Low EnableActive-LOW control for I/O0–I/O7; enables partial-byte writes without disturbing high byte
BHEByte High EnableActive-LOW control for I/O8–I/O15; enables independent high-byte updates
VCCPower SupplyCore logic and I/O supply; dual VCC balls support low-inductance decoupling
VSSGroundDigital ground reference; multiple VSS balls reduce ground bounce in high-speed operation
NCNo ConnectPins H1, G2, H6 are unconnected; reserved for future density expansion (8/16/32 Mb)

Key Features

FeatureDesign Value
MoBL® Ultra-Low Power ArchitectureReduces standby current to ≤7 µA while maintaining full SRAM functionality and data retention down to 1.0 V
Independent Byte Write ControlEnables true 8-bit writes via BHE/BLE without read-modify-write overhead-critical for efficient firmware patching and buffer management
Automatic Power-Down on DeselectEliminates external power gating circuitry; cuts power >99% when CE HIGH or both BHE/BLE HIGH
High-Speed 55 ns AccessMeets timing requirements for 18 MHz synchronous bus interfaces without wait states
VFBGA-48 Small-Form-Factor Packaging6 mm × 8 mm footprint supports dense PCB layouts in handheld and wearable devices

Applications

Wireless Handset Baseband MemoryIndustrial PLC Data Buffer

Use Scenario: Stores real-time voice codec parameters and packet buffers in GSM/UMTS handsets operating from single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: Primary working memory for baseband processor; accessed at burst rates up to 18 MHz with strict 55 ns read/write timing.

Use Value: 7 µA standby current extends talk time by >20% versus legacy 3.3 V SRAMs; VFBGA-48 fits tight RF module spacing constraints.

Use Scenario: Holds transient I/O status, motion control setpoints, and fault logs in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM interfaced to ARM Cortex-M7 via 16-bit parallel bus; survives –40 °C cold start and 85 °C cabinet operation.

Use Value: Industrial temperature rating and 1.0 V data retention ensure reliable operation during brownouts and extended power-loss events.

Medical Wearable Sensor CacheAutomotive Body Control Module (BCM)

Use Scenario: Caches accelerometer, ECG, and SpO₂ waveform samples in FDA-cleared patient monitors worn continuously for 72+ hours.

IC Role / Device Role / Timing Role: Low-leakage scratchpad memory for sensor fusion algorithms; powered from regulated 1.8 V rail with intermittent wake-up bursts.

Use Value: 2 mA active current at 1 MHz enables 10-second continuous sampling per battery charge cycle; 6×8 mm VFBGA simplifies flex-rigid PCB integration.

Use Scenario: Stores door lock actuator sequences, window position history, and lighting configuration in CAN-connected body control units.

IC Role / Device Role / Timing Role: Fast-access configuration RAM mapped into microcontroller's external memory space; updated only during ignition-off programming.

Use Value: Pin compatibility with CY62147DV18 allows drop-in upgrade path; 55 ns access ensures zero-latency response to LIN bus commands.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62147DV18LL-55BVXISame density, speed, and package; differs in internal design revision (pre-MoBL® vs MoBL®); slightly higher ISB2 (10 µA max)Legacy design with identical pinout but no guaranteed 1.0 V data retentionSelect when backward compatibility with older board revisions is required and 1.0 V retention is not needed
IS61WV25616EDBLL-55BLISame 256 K × 16 organization and 55 ns speed; wider VCC range (2.2 V–3.6 V); higher standby current (25 µA max)Requires level-shifting for 1.8 V systems; suited for mixed-voltage industrial backplanesChoose when integrating with 3.3 V peripherals or where higher voltage margin outweighs battery-life penalty

Compared with CY62147DV18LL-55BVXI, this part delivers verified 1.0 V data retention and lower standby current; versus IS61WV25616EDBLL-55BLI, it enables direct 1.8 V system integration without voltage translation, reducing BOM count and layout complexity.

Availability

CY62147EV18LL-55BVXI is available at Aetrix Electronics and suitable for wireless handset baseband memory, industrial PLC data buffering, and medical wearable sensor cache applications requiring stable component supply across long production lifecycles.

Supply support for CY62147EV18LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, automotive, and industrial markets.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and compact packaging are critical design constraints.

FAQ

What is the minimum VCC required to retain data in CY62147EV18LL-55BVXI?

The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table (page 6 of datasheet 38-05441 Rev. *L). At this voltage, ICCDR remains ≤5 µA, and tCDR is 0 ns-meaning retention begins immediately upon entering low-VCC mode with CE or BHE/BLE deselected.

Can CY62147EV18LL-55BVXI be used with a 1.8 V microcontroller without level shifters?

Yes. Its 1.65 V to 2.25 V VCC range and TTL-compatible input thresholds (VIH ≥ 1.4 V, VIL ≤ 0.4 V at VCC = 1.8 V) allow direct connection to 1.8 V logic families. No level shifting is needed for address, control, or data lines when VCC is set to 1.8 V.

How does automatic power-down activate, and what signals must be controlled?

Automatic power-down activates when CE is HIGH or both BHE and BLE are HIGH. All other inputs may float, but CE, BHE, and BLE must be driven to valid CMOS levels (≥VCC–0.2 V for HIGH, ≤0.2 V for LOW) to guarantee ISB1/ISB2 compliance per datasheet footnote 8.

Is the VFBGA-48 package lead-free and RoHS-compliant?

Yes. The "X" suffix in CY62147EV18LL-55BVXI denotes a Pb-free, RoHS-compliant VFBGA package. Cypress confirms full compliance with EU RoHS Directive 2011/65/EU and J-STD-609A Class 1 marking for moisture sensitivity level (MSL) 3.

CY62147EV18LL-55BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
1.65V ~ 2.25V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62147EV18LL-55BVXI FAQ

1.How can I place an order for CY62147EV18LL-55BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147EV18LL-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147EV18LL-55BVXI reliable?

The price and inventory of CY62147EV18LL-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147EV18LL-55BVXI is usually 5 days.

3.What payment methods are accepted for CY62147EV18LL-55BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147EV18LL-55BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147EV18LL-55BVXI?

CY62147EV18LL-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147EV18LL-55BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147EV18LL-55BVXI?

For technical support, including CY62147EV18LL-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147EV18LL-55BVXI requirements.

6.How does Aetrix verify that CY62147EV18LL-55BVXI is sourced from the original manufacturer or authorized distributors?

All CY62147EV18LL-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147EV18LL-55BVXI meets industry standards.

7.What is the process for return or replacement of CY62147EV18LL-55BVXI?

All CY62147EV18LL-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147EV18LL-55BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147EV18LL-55BVXI part is unused and in its original packaging.

Return procedure for CY62147EV18LL-55BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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