Infineon Technologies CY62147EV18LL-55BVXI
- Part No.:
- CY62147EV18LL-55BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147EV18LL-55BVXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,116
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62147EV18LL-55BVXI from Cypress Semiconductor is a 4-Mbit (256 K × 16) CMOS static RAM with 55 ns access time, 1.65 V to 2.25 V supply voltage, and ultra-low standby current (max 7 µA). It implements byte-wide write control via BHE/BLE, automatic power-down on deselect, and operates in industrial temperature range (–40 °C to +85 °C), targeting battery-constrained portable memory subsystems.
For engineers reviewing the CY62147EV18LL-55BVXI datasheet, CY62147EV18LL-55BVXI pinout, CY62147EV18LL-55BVXI application, or CY62147EV18LL-55BVXI equivalent, key selection criteria include VFBGA-48 package compatibility, 16-bit data bus interface, MoBL® low-power architecture, and CE/OE/BHE/BLE timing coordination for memory expansion in space- and energy-sensitive designs.
Technical Context
This SRAM uses complementary metal oxide semiconductor (CMOS) process technology to achieve optimal balance between speed and power. Its architecture supports independent high- and low-byte write enable (BHE/BLE), enabling selective 8-bit writes without read-modify-write cycles.
The device enters automatic power-down mode when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤7 µA. Output pins enter high-impedance state during deselect, OE HIGH, or active write-ensuring clean bus sharing in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256 K × 16) - provides 512 KB of byte-addressable storage with 16-bit parallel interface |
| Access Time | 55 ns - guarantees deterministic read latency for real-time embedded control loops |
| Supply Voltage | 1.65 V to 2.25 V - compatible with modern low-voltage SoC I/O domains and battery-powered operation |
| Standby Current | Max 7 µA at VCC = 2.25 V - enables >1-year battery life in always-on sensor nodes |
| Active Current | Typ 2 mA at f = 1 MHz - supports burst-mode operation with minimal thermal impact |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade reliability in harsh environments |
| Data Retention Voltage | Min 1.0 V - allows memory contents to persist during brown-out or sleep-state VCC scaling |
Pinout & Package
Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256 K-word addressing; A16/A17 used for higher-density variants |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE LOW; isolated during high-Z states |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE LOW; independently controllable from low byte |
| CE | Chip Enable | Active-LOW global select; forces all outputs to high-Z and initiates automatic power-down when HIGH |
| OE | Output Enable | Active-LOW read strobe; disables output drivers without affecting internal state or power mode |
| WE | Write Enable | Active-LOW write strobe; latches data on rising edge when CE and byte enables are asserted |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; enables partial-byte writes without disturbing high byte |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables independent high-byte updates |
| VCC | Power Supply | Core logic and I/O supply; dual VCC balls support low-inductance decoupling |
| VSS | Ground | Digital ground reference; multiple VSS balls reduce ground bounce in high-speed operation |
| NC | No Connect | Pins H1, G2, H6 are unconnected; reserved for future density expansion (8/16/32 Mb) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to ≤7 µA while maintaining full SRAM functionality and data retention down to 1.0 V |
| Independent Byte Write Control | Enables true 8-bit writes via BHE/BLE without read-modify-write overhead-critical for efficient firmware patching and buffer management |
| Automatic Power-Down on Deselect | Eliminates external power gating circuitry; cuts power >99% when CE HIGH or both BHE/BLE HIGH |
| High-Speed 55 ns Access | Meets timing requirements for 18 MHz synchronous bus interfaces without wait states |
| VFBGA-48 Small-Form-Factor Packaging | 6 mm × 8 mm footprint supports dense PCB layouts in handheld and wearable devices |
Applications
| Wireless Handset Baseband Memory | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Stores real-time voice codec parameters and packet buffers in GSM/UMTS handsets operating from single-cell Li-ion batteries. IC Role / Device Role / Timing Role: Primary working memory for baseband processor; accessed at burst rates up to 18 MHz with strict 55 ns read/write timing. Use Value: 7 µA standby current extends talk time by >20% versus legacy 3.3 V SRAMs; VFBGA-48 fits tight RF module spacing constraints. | Use Scenario: Holds transient I/O status, motion control setpoints, and fault logs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM interfaced to ARM Cortex-M7 via 16-bit parallel bus; survives –40 °C cold start and 85 °C cabinet operation. Use Value: Industrial temperature rating and 1.0 V data retention ensure reliable operation during brownouts and extended power-loss events. |
| Medical Wearable Sensor Cache | Automotive Body Control Module (BCM) |
Use Scenario: Caches accelerometer, ECG, and SpO₂ waveform samples in FDA-cleared patient monitors worn continuously for 72+ hours. IC Role / Device Role / Timing Role: Low-leakage scratchpad memory for sensor fusion algorithms; powered from regulated 1.8 V rail with intermittent wake-up bursts. Use Value: 2 mA active current at 1 MHz enables 10-second continuous sampling per battery charge cycle; 6×8 mm VFBGA simplifies flex-rigid PCB integration. | Use Scenario: Stores door lock actuator sequences, window position history, and lighting configuration in CAN-connected body control units. IC Role / Device Role / Timing Role: Fast-access configuration RAM mapped into microcontroller's external memory space; updated only during ignition-off programming. Use Value: Pin compatibility with CY62147DV18 allows drop-in upgrade path; 55 ns access ensures zero-latency response to LIN bus commands. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62147DV18LL-55BVXI | Same density, speed, and package; differs in internal design revision (pre-MoBL® vs MoBL®); slightly higher ISB2 (10 µA max) | Legacy design with identical pinout but no guaranteed 1.0 V data retention | Select when backward compatibility with older board revisions is required and 1.0 V retention is not needed |
| IS61WV25616EDBLL-55BLI | Same 256 K × 16 organization and 55 ns speed; wider VCC range (2.2 V–3.6 V); higher standby current (25 µA max) | Requires level-shifting for 1.8 V systems; suited for mixed-voltage industrial backplanes | Choose when integrating with 3.3 V peripherals or where higher voltage margin outweighs battery-life penalty |
Compared with CY62147DV18LL-55BVXI, this part delivers verified 1.0 V data retention and lower standby current; versus IS61WV25616EDBLL-55BLI, it enables direct 1.8 V system integration without voltage translation, reducing BOM count and layout complexity.
Availability
CY62147EV18LL-55BVXI is available at Aetrix Electronics and suitable for wireless handset baseband memory, industrial PLC data buffering, and medical wearable sensor cache applications requiring stable component supply across long production lifecycles.
Supply support for CY62147EV18LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, automotive, and industrial markets.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and compact packaging are critical design constraints.
FAQ
What is the minimum VCC required to retain data in CY62147EV18LL-55BVXI?
The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table (page 6 of datasheet 38-05441 Rev. *L). At this voltage, ICCDR remains ≤5 µA, and tCDR is 0 ns-meaning retention begins immediately upon entering low-VCC mode with CE or BHE/BLE deselected.
Can CY62147EV18LL-55BVXI be used with a 1.8 V microcontroller without level shifters?
Yes. Its 1.65 V to 2.25 V VCC range and TTL-compatible input thresholds (VIH ≥ 1.4 V, VIL ≤ 0.4 V at VCC = 1.8 V) allow direct connection to 1.8 V logic families. No level shifting is needed for address, control, or data lines when VCC is set to 1.8 V.
How does automatic power-down activate, and what signals must be controlled?
Automatic power-down activates when CE is HIGH or both BHE and BLE are HIGH. All other inputs may float, but CE, BHE, and BLE must be driven to valid CMOS levels (≥VCC–0.2 V for HIGH, ≤0.2 V for LOW) to guarantee ISB1/ISB2 compliance per datasheet footnote 8.
Is the VFBGA-48 package lead-free and RoHS-compliant?
Yes. The "X" suffix in CY62147EV18LL-55BVXI denotes a Pb-free, RoHS-compliant VFBGA package. Cypress confirms full compliance with EU RoHS Directive 2011/65/EU and J-STD-609A Class 1 marking for moisture sensitivity level (MSL) 3.
CY62147EV18LL-55BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147EV18LL-55BVXI FAQ
1.How can I place an order for CY62147EV18LL-55BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147EV18LL-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147EV18LL-55BVXI reliable?
The price and inventory of CY62147EV18LL-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147EV18LL-55BVXI is usually 5 days.
3.What payment methods are accepted for CY62147EV18LL-55BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147EV18LL-55BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147EV18LL-55BVXI?
CY62147EV18LL-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147EV18LL-55BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147EV18LL-55BVXI?
For technical support, including CY62147EV18LL-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147EV18LL-55BVXI requirements.
6.How does Aetrix verify that CY62147EV18LL-55BVXI is sourced from the original manufacturer or authorized distributors?
All CY62147EV18LL-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147EV18LL-55BVXI meets industry standards.
7.What is the process for return or replacement of CY62147EV18LL-55BVXI?
All CY62147EV18LL-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147EV18LL-55BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147EV18LL-55BVXI part is unused and in its original packaging.
Return procedure for CY62147EV18LL-55BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62147EV18LL-55BVXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

