Infineon Technologies CY62147EV18LL-55BVXIT

Overview

CY62147EV18LL-55BVXIT from Cypress Semiconductor is a 4-Mbit (256 K × 16) CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (1 µA typical). It supports byte-wide writes via independent BHE/BLE controls and automatic power-down when deselected-designed for battery-constrained portable systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62147EV18LL-55BVXIT datasheet, CY62147EV18LL-55BVXIT pinout, CY62147EV18LL-55BVXIT application, or CY62147EV18LL-55BVXIT equivalent, key selection criteria include 55 ns read timing, 1.65–2.25 V operation, 48-ball VFBGA package compatibility, MoBL® low-power architecture, and CE/OE/BHE/BLE control logic for memory expansion in space- and power-sensitive embedded designs.

Technical Context

The CY62147EV18LL-55BVXIT implements a 256 K × 16 asynchronous SRAM array with dual-byte enable (BHE/BLE) for independent high/low word access. Its CMOS design enables full-speed operation at 1.65 V while maintaining 55 ns tRC and 25 ns tDOE, with tri-state outputs controlled by CE, OE, BHE, and BLE.

Power management is handled through automatic power-down: when CE is HIGH or both BHE and BLE are HIGH, ICC drops to ≤7 µA (ISB2), reducing active consumption by >99%. Data retention is supported down to 1.0 V with ICCDR ≤5 µA, enabling low-voltage suspend modes without data loss.

Key Specifications

Pinout & Package

48-ball very fine ball grid array (VFBGA) package with 0.5 mm pitch, 6 mm × 8 mm body size, and thermal resistance θJA = 54 °C/W (mounted on 4-layer PCB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-55NLI and R1LV25616ASB-5SI#U0, the CY62147EV18LL-55BVXIT uniquely combines 1.65 V operation, 48-ball VFBGA packaging, and 1 µA standby current-making it the only option for next-gen wearables requiring simultaneous miniaturization, extended battery life, and wide-input-voltage resilience.

Availability

CY62147EV18LL-55BVXIT is available at Aetrix Electronics and suitable for cellular handset baseband memory, portable medical monitor data buffering, and industrial PLC I/O expansion modules requiring stable component supply across automotive and industrial temperature ranges.

Supply support for CY62147EV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for embedded systems.

The CY62147EV18 series belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-voltage, ultra-low-power portable electronics where battery runtime and board space are primary constraints.

FAQ

What is the minimum VCC required to retain data in CY62147EV18LL-55BVXIT?

Data retention is guaranteed down to 1.0 V (VDR), with ICCDR ≤5 µA under those conditions. This allows the device to maintain memory contents during brown-out events or when powered from backup coin cells. The specification assumes CE or both BHE/BLE are held HIGH to enter retention mode, and all other inputs are at valid CMOS levels.

Can CY62147EV18LL-55BVXIT operate reliably at 1.65 V across the full industrial temperature range?

Yes. The device is fully characterized from –40 °C to +85 °C at 1.65 V minimum VCC, with 55 ns access time and 2 mA typical ICC at 1 MHz maintained. Electrical parameters including tRC, tAA, and ISB2 are guaranteed across this range per the datasheet's Operating Range table on page 4.

How does the automatic power-down feature activate, and what signals must be controlled?

Automatic power-down activates when CE is HIGH or both BHE and BLE are HIGH. To achieve the rated 1 µA standby current (ISB2), CE and byte enables must be driven to valid CMOS levels (≥VCC–0.2 V or ≤0.2 V); other inputs may float. OE and WE states do not affect power-down entry, but OE HIGH forces outputs to high-Z regardless.

Are NC pins on the 48-ball VFBGA safe to leave unconnected on the PCB?

Yes. Pins H1, G2, and H6 are designated NC (no-connect) and are not bonded on-die. They must remain unconnected on the PCB layout-no pull-up, pull-down, or routing. These pins are reserved for future higher-density derivatives (8/16/32 Mb) and have no electrical function in the CY62147EV18LL-55BVXIT.