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Infineon Technologies CY62147EV18LL-55BVXIT
- Part No.:
- CY62147EV18LL-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147EV18LL-55BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,651
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Product details
Overview
CY62147EV18LL-55BVXIT from Cypress Semiconductor is a 4-Mbit (256 K × 16) CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (1 µA typical). It supports byte-wide writes via independent BHE/BLE controls and automatic power-down when deselected-designed for battery-constrained portable systems including cellular handsets and handheld instrumentation.
For engineers reviewing the CY62147EV18LL-55BVXIT datasheet, CY62147EV18LL-55BVXIT pinout, CY62147EV18LL-55BVXIT application, or CY62147EV18LL-55BVXIT equivalent, key selection criteria include 55 ns read timing, 1.65–2.25 V operation, 48-ball VFBGA package compatibility, MoBL® low-power architecture, and CE/OE/BHE/BLE control logic for memory expansion in space- and power-sensitive embedded designs.
Technical Context
The CY62147EV18LL-55BVXIT implements a 256 K × 16 asynchronous SRAM array with dual-byte enable (BHE/BLE) for independent high/low word access. Its CMOS design enables full-speed operation at 1.65 V while maintaining 55 ns tRC and 25 ns tDOE, with tri-state outputs controlled by CE, OE, BHE, and BLE.
Power management is handled through automatic power-down: when CE is HIGH or both BHE and BLE are HIGH, ICC drops to ≤7 µA (ISB2), reducing active consumption by >99%. Data retention is supported down to 1.0 V with ICCDR ≤5 µA, enabling low-voltage suspend modes without data loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256 K × 16) - supports 16-bit data bus interface without external multiplexing |
| Access Time | 55 ns - guarantees deterministic read latency for real-time firmware execution |
| Supply Voltage | 1.65 V to 2.25 V - compatible with modern low-voltage SoC I/O domains and battery discharge curves |
| Standby Current | 1 µA typical / 7 µA max - enables multi-week sleep mode in portable devices |
| Active Current | 2 mA at 1 MHz - minimizes average power during burst reads in sensor logging applications |
| Data Retention Voltage | 1.0 V minimum - allows retention during brown-out or backup-battery operation |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) - meets space constraints in compact mobile PCBs |
Pinout & Package
48-ball very fine ball grid array (VFBGA) package with 0.5 mm pitch, 6 mm × 8 mm body size, and thermal resistance θJA = 54 °C/W (mounted on 4-layer PCB).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256 K-word addressing; A16/A17 used for higher-density variants |
| I/O0–I/O7 | Data bus (low byte) | Bi-directional 8-bit data path enabled only when BLE = LOW during read/write |
| I/O8–I/O15 | Data bus (high byte) | Bi-directional 8-bit data path enabled only when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces device into high-Z and auto power-down when HIGH |
| OE | Output Enable | Active-LOW output gate; disables outputs (high-Z) when HIGH, independent of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write when CE and WE both LOW |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; enables byte-select write/read without affecting high byte |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables byte-select write/read without affecting low byte |
| VCC | Power supply | 1.65–2.25 V core supply; two dedicated balls (E1, F1) reduce IR drop and noise |
| VSS | Ground | Two ground balls (D1, G1) provide low-inductance return path for switching currents |
| NC | No-connect | Pins H1, G2, H6 are unconnected; reserved for future density expansion (8/16/32 Mb) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 1 µA typical-enables >30-day battery life in always-on sensor nodes |
| Independent Byte Enables (BHE/BLE) | Allows partial-word writes without read-modify-write cycles, cutting active power by up to 40% in mixed-data applications |
| Automatic Power-Down Mode | Triggers when CE HIGH or both BHE/BLE HIGH, eliminating need for external power-gating logic |
| 55 ns Access with 1.65 V Supply | Maintains full-speed performance across entire voltage range-no derating required for Li-ion battery discharge |
| 48-ball VFBGA Footprint | Enables high-density routing in <100 mm² PCB area; compatible with standard reflow profiles and AOI inspection |
Applications
| Cellular Handset Baseband Memory | Portable Medical Monitor Data Buffer |
|---|---|
Use Scenario: Stores real-time baseband processing buffers and firmware scratchpad in GSM/UMTS modems operating from single-cell Li-ion (3.0–4.2 V) with LDO-regulated 1.8 V rail. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state access for DSP co-processor instruction/data caching. Use Value: 55 ns tRC and 2 mA active current at 1 MHz allow sustained 20 MB/s burst throughput while extending talk time by 12% versus prior-generation SRAMs. | Use Scenario: Captures and buffers ECG waveform samples at 1 kS/s before compression and wireless transmission in Class IIa wearable monitors. IC Role / Device Role / Timing Role: Low-voltage SRAM acting as FIFO buffer between ADC controller and BLE subsystem. Use Value: 1.0 V data retention and 1 µA ISB2 support 72-hour deep-sleep mode with full waveform recovery upon wake-up. |
| Industrial PLC I/O Expansion Module | Automotive ADAS Camera Pre-Processing Cache |
Use Scenario: Holds configuration registers and transient I/O status in DIN-rail mounted programmable logic controllers exposed to –40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Industrial-grade SRAM interfacing directly with ARM Cortex-M7 bus using byte-enable granularity. Use Value: Wide 1.65–2.25 V VCC range ensures reliable operation across 24 V DC input fluctuations and cold-start conditions. | Use Scenario: Buffers raw Bayer-pattern image frames from 5 MP image sensor before ISP pipeline processing in rear-view camera modules. IC Role / Device Role / Timing Role: High-speed SRAM serving as line buffer for real-time noise reduction and HDR merging algorithms. Use Value: 48-ball VFBGA footprint fits within tight 12 mm × 12 mm camera module PCB, while 55 ns access prevents frame-drop at 60 fps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-55NLI | Same 256 K × 16 organization, 55 ns speed, but 2.5 V min VCC (vs. 1.65 V); 10 µA ISB max | Not suitable for sub-2.5 V battery rails; requires level-shifting in 1.8 V systems | Select only if system uses ≥2.5 V supply and legacy footprint compatibility is critical |
| Renesas R1LV25616ASB-5SI#U0 | Identical 1.65–2.25 V range and 1 µA ISB typical, but 44-pin TSOP-II package (vs. VFBGA) | Larger PCB footprint and higher inductance; unsuitable for ultra-compact mobile designs | Prefer for cost-sensitive industrial boards where reflow yield and test accessibility outweigh size constraints |
Compared with IS62WV25616BLL-55NLI and R1LV25616ASB-5SI#U0, the CY62147EV18LL-55BVXIT uniquely combines 1.65 V operation, 48-ball VFBGA packaging, and 1 µA standby current-making it the only option for next-gen wearables requiring simultaneous miniaturization, extended battery life, and wide-input-voltage resilience.
Availability
CY62147EV18LL-55BVXIT is available at Aetrix Electronics and suitable for cellular handset baseband memory, portable medical monitor data buffering, and industrial PLC I/O expansion modules requiring stable component supply across automotive and industrial temperature ranges.
Supply support for CY62147EV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for embedded systems.
The CY62147EV18 series belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-voltage, ultra-low-power portable electronics where battery runtime and board space are primary constraints.
FAQ
What is the minimum VCC required to retain data in CY62147EV18LL-55BVXIT?
Data retention is guaranteed down to 1.0 V (VDR), with ICCDR ≤5 µA under those conditions. This allows the device to maintain memory contents during brown-out events or when powered from backup coin cells. The specification assumes CE or both BHE/BLE are held HIGH to enter retention mode, and all other inputs are at valid CMOS levels.
Can CY62147EV18LL-55BVXIT operate reliably at 1.65 V across the full industrial temperature range?
Yes. The device is fully characterized from –40 °C to +85 °C at 1.65 V minimum VCC, with 55 ns access time and 2 mA typical ICC at 1 MHz maintained. Electrical parameters including tRC, tAA, and ISB2 are guaranteed across this range per the datasheet's Operating Range table on page 4.
How does the automatic power-down feature activate, and what signals must be controlled?
Automatic power-down activates when CE is HIGH or both BHE and BLE are HIGH. To achieve the rated 1 µA standby current (ISB2), CE and byte enables must be driven to valid CMOS levels (≥VCC–0.2 V or ≤0.2 V); other inputs may float. OE and WE states do not affect power-down entry, but OE HIGH forces outputs to high-Z regardless.
Are NC pins on the 48-ball VFBGA safe to leave unconnected on the PCB?
Yes. Pins H1, G2, and H6 are designated NC (no-connect) and are not bonded on-die. They must remain unconnected on the PCB layout-no pull-up, pull-down, or routing. These pins are reserved for future higher-density derivatives (8/16/32 Mb) and have no electrical function in the CY62147EV18LL-55BVXIT.
CY62147EV18LL-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147EV18LL-55BVXIT FAQ
1.How can I place an order for CY62147EV18LL-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147EV18LL-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147EV18LL-55BVXIT reliable?
The price and inventory of CY62147EV18LL-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147EV18LL-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147EV18LL-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147EV18LL-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147EV18LL-55BVXIT?
CY62147EV18LL-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147EV18LL-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147EV18LL-55BVXIT?
For technical support, including CY62147EV18LL-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147EV18LL-55BVXIT requirements.
6.How does Aetrix verify that CY62147EV18LL-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147EV18LL-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147EV18LL-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147EV18LL-55BVXIT?
All CY62147EV18LL-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147EV18LL-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147EV18LL-55BVXIT part is unused and in its original packaging.
Return procedure for CY62147EV18LL-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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