Infineon Technologies CY62147EV30LL-45B2XIT

Overview

CY62147EV30LL-45B2XIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (2.5 µA typical), byte power-down capability, and automatic CE-based power-down-designed for battery-sensitive MoBL® applications including portable telecom and handheld instrumentation.

For engineers reviewing the CY62147EV30LL-45B2XIT datasheet, CY62147EV30LL-45B2XIT pinout, CY62147EV30LL-45B2XIT application, or CY62147EV30LL-45B2XIT equivalent, key selection criteria include its dual-byte enable (BHE/ BLE) control, VFBGA-48 package compatibility, 45 ns read/write timing, and sub-7 µA max ISB2 at industrial temperature.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 256K words × 16 bits, using CMOS process technology optimized for low active current (3.5 mA typical at 1 MHz) and fast address-to-data propagation (tAA ≤ 45 ns). Its logic supports independent high- and low-byte write enables and automatic high-impedance output control on CE/OE/BHE/ BLE assertion.

The device integrates a dedicated power-down circuit that activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤7 µA while retaining data down to 1.5 V VCC. It supports two VFBGA configurations-single CE (pin CE) and dual CE (CE1/CE2)-with CE internally derived as logical AND of CE1 and inverted CE2 in dual mode.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 0.5 mm pitch, single CE configuration (as indicated by suffix "B2XIT"). Compliant with JEDEC MO-276AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616AS-45SI, CY62147EV30LL-45B2XIT uniquely delivers 2.2–3.6 V operation, true byte-select power gating, and 2.5 µA standby-making it optimal for ultra-low-power, mixed-voltage portable systems requiring flexible memory access.

Availability

CY62147EV30LL-45B2XIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, and automotive body control units requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for CY62147EV30LL-45B2XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed parallel memory in space- and energy-constrained portable electronics.

FAQ

What is the maximum clock frequency supported for continuous read/write bursts?

The CY62147EV30LL-45B2XIT does not use a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is governed by the 45 ns cycle time (tRC), enabling up to ~22.2 MHz sustained random access. For burst transfers, address setup/hold and OE/WE timing must comply with tAW = 35 ns and tDOE = 22 ns respectively, limiting practical bus rates to ≤15 MHz in standard microcontroller interfaces.

Can this part operate reliably at 2.2 V across the full industrial temperature range?

Yes. The datasheet explicitly specifies operation from 2.2 V to 3.6 V over –40 °C to +85 °C. At 2.2 V and +85 °C, access time remains ≤45 ns, standby current stays ≤7 µA, and all DC/AC parameters-including VIH/VIL thresholds and output drive-are fully guaranteed per the Electrical Characteristics table on page 4.

How does the byte power-down feature reduce system power?

When either BHE or BLE is held HIGH while CE is LOW, only the corresponding 8-bit I/O segment enters high-impedance state and its internal sense amplifiers power down. This cuts dynamic current for unused bytes during partial-word accesses-reducing active ICC by up to 40% compared to full 16-bit operations, especially beneficial in FIFO or register-file usage models.

Is the VFBGA-48 package RoHS and REACH compliant?

Yes. The "XIT" suffix in CY62147EV30LL-45B2XIT denotes Infineon's standard Pb-free, halogen-free, RoHS-compliant VFBGA packaging. The device meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) and is qualified per AEC-Q200 for passive components in automotive applications.