Infineon Technologies CY62147EV30LL-45BVI

Overview

CY62147EV30LL-45BVI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature support (–40 °C to +85 °C). It delivers ultra-low standby current (2.5 µA typical), active current of 3.5 mA at 1 MHz, and features byte power-down, automatic CE-based power-down, and pin compatibility with CY62147DV30 - used in battery-constrained portable memory subsystems.

For engineers reviewing the CY62147EV30LL-45BVI datasheet, CY62147EV30LL-45BVI pinout, CY62147EV30LL-45BVI application, or CY62147EV30LL-45BVI equivalent, key selection criteria include its dual-byte enable architecture, VFBGA-48 package footprint, MoBL® low-power operation, and compatibility with 16-bit data bus interfaces in space- and energy-sensitive embedded systems.

Technical Context

The CY62147EV30LL-45BVI implements a 256K × 16 asynchronous SRAM array with independent Byte Low Enable (BLE) and Byte High Enable (BHE) controls, enabling selective 8-bit writes without affecting adjacent bytes. Its CMOS design integrates automatic power-down circuitry that activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤7 µA.

It supports two CE configurations: single CE (pin CE) and dual CE (CE1/CE2 logic combination), where CE = CE1 AND NOT(CE2); this enables flexible chip-select arbitration in multi-SRAM systems. All I/O pins enter high-impedance state under four conditions: CE HIGH, OE HIGH, BHE & BLE HIGH, or during active write (CE LOW & WE LOW).

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, single CE configuration. RoHS-compliant, Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, the CY62147EV30LL-45BVI uniquely balances ultra-low standby power, wide voltage flexibility, and industrial-grade reliability - making it optimal for battery-operated edge devices needing predictable 45 ns latency without over-spec'ing speed or thermal margin.

Availability

CY62147EV30LL-45BVI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and wireless modem baseband memory requiring stable component supply, long-term lifecycle support, and RoHS-compliant VFBGA packaging.

Supply support for CY62147EV30LL-45BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

This device belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability volatile memory in portable and energy-constrained embedded systems.

FAQ

What is the maximum clock frequency supported by CY62147EV30LL-45BVI?

The CY62147EV30LL-45BVI is an asynchronous SRAM and does not use a clock signal. Its timing is governed by access time (tRC = 45 ns) and cycle time constraints. Maximum effective throughput is determined by external controller timing margins - typically up to ~12 MHz sustained random access rate under ideal board conditions.

Can CY62147EV30LL-45BVI operate reliably at 2.2 V across the full industrial temperature range?

Yes. The datasheet specifies guaranteed operation from 2.2 V to 3.6 V over –40 °C to +85 °C. At 2.2 V, access time remains ≤45 ns and standby current stays within 7 µA max, validated per AC and DC electrical characteristics tables in Rev. *T.

Does the VFBGA package support reflow soldering per JEDEC J-STD-020?

Yes. The 48-ball VFBGA package is qualified for standard lead-free reflow profiles per JEDEC J-STD-020D, with peak temperature up to 260 °C. Thermal resistance values (θJA = 42.1 °C/W) assume mounting on a 3 × 4.5 inch, two-layer PCB per datasheet test condition.

How does byte power-down affect data integrity during partial writes?

Byte power-down (via BLE/BHE) disables only the selected 8-bit I/O path; the unselected byte remains fully functional and retains valid data. No read-modify-write sequence is needed - writing to I/O0–I/O7 while BHE = HIGH leaves I/O8–I/O15 unchanged and electrically isolated.