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Infineon Technologies CY62147EV30LL-45BVXI
- Part No.:
- CY62147EV30LL-45BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147EV30LL-45BVXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,950
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Product details
Overview
CY62147EV30LL-45BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (7 µA max), active current of 3.5 mA at 1 MHz, and supports byte power-down for portable battery-powered systems including cellular handsets and IoT edge nodes.
For engineers reviewing the CY62147EV30LL-45BVXI datasheet, CY62147EV30LL-45BVXI pinout, CY62147EV30LL-45BVXI application, or CY62147EV30LL-45BVXI equivalent, key selection criteria include its dual CE/BHE/BLE control architecture, VFBGA-48 package compatibility, MoBL® low-power operation, and pin compatibility with CY62147DV30 for drop-in memory upgrades in space-constrained embedded designs.
Technical Context
The device implements a true static RAM array with no refresh required, using complementary metal oxide semiconductor (CMOS) process technology optimized for speed–power trade-off. Its automatic power-down logic activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC by >99% versus active mode.
It supports independent byte write control via BLE (I/O0–I/O7) and BHE (I/O8–I/O15), enabling efficient 8-bit data transfers in mixed-width bus systems. The 48-ball VFBGA package offers single CE and dual CE variants - in dual CE mode, internal logic combines CE1 and CE2 such that CE = LOW only when CE1 = LOW and CE2 = HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16), enabling 512 KB of word-addressable storage for firmware buffers or real-time data logging |
| Access Time | 45 ns max, supporting synchronous interface timing up to ~22 MHz system clock domains |
| Supply Voltage | 2.2 V to 3.6 V, compatible with Li-ion battery discharge profiles and 3.3 V logic rails |
| Standby Current | 7 µA max (industrial), allowing multi-year battery life in always-on sensor nodes |
| Active Current | 3.5 mA typical at 1 MHz, minimizing thermal load in sealed enclosures |
| Data Retention | 1.5 V min VCC, permitting retention during brown-out or sleep-mode voltage scaling |
| Operating Temp | –40 °C to +85 °C, qualified for industrial automation and automotive cabin electronics |
Pinout & Package
Package: 48-ball very fine ball grid array (VFBGA), 0.5 mm pitch, JEDEC MO-276AA compliant. Single CE variant used in this part number (CY62147EV30LL-45BVXI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A16/A17 used for bank selection in expanded memory maps |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance state enforced during deselect, OE HIGH, or write cycles |
| CE | Chip enable | Primary device select; HIGH forces automatic power-down and output high-Z regardless of other controls |
| WE | Write enable | Active-LOW signal initiating write cycle; must be LOW with CE LOW and appropriate BHE/ BLE to store data |
| OE | Output enable | Active-LOW read control; outputs float when HIGH, even if CE is LOW |
| BHE, BLE | Byte high/low enable | Independent 8-bit write masking: BLE enables I/O0–I/O7; BHE enables I/O8–I/O15 |
| VCC, VSS | Power supply | Dual VCC pins (Balls A3, D1) and dual VSS pins (Balls E1, H3) reduce IR drop and improve noise immunity |
| NC | No-connect | Balls G2, H1, H6 are unconnected; reserved for higher-density derivatives (8/16/32 Mb) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 2.5 µA typical, extending battery runtime in portable medical and telemetry devices |
| Byte Power-Down Control | Enables selective 8-bit write operations without disturbing adjacent bytes, minimizing bus contention and EMI |
| Automatic Power-Down Logic | Enters sub-µA retention state within 45 ns of CE deassertion, eliminating need for external power-gating circuitry |
| CMOS-Compatible Interface | Supports direct connection to ARM Cortex-M, RISC-V, and FPGA I/O banks without level-shifting at 2.5 V or 3.3 V |
| Pb-Free VFBGA Packaging | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) |
Applications
| Cellular Baseband Processing | Industrial PLC Data Buffering |
|---|---|
Use Scenario: Storing real-time voice codec coefficients and packet buffers in 3G/4G LTE modems operating on single-cell Li-ion batteries. IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM providing deterministic 45 ns read/write latency for baseband DSP co-processing. Use Value: 7 µA max ISB enables >5-year shelf life in powered-down standby mode while retaining critical calibration data. | Use Scenario: Caching sensor acquisition data across multiple analog input channels in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Non-refresh volatile memory serving as fast intermediate buffer between ADC FIFOs and ARM-based control engine. Use Value: Byte-enable capability allows partial updates of 8-bit sensor registers without corrupting adjacent 16-bit status words. |
| Wearable Health Monitor Memory | Automotive Body Control Module |
Use Scenario: Holding ECG waveform samples and algorithm state variables in compact wearable patches with coin-cell power sources. IC Role / Device Role / Timing Role: Low-voltage SRAM operating down to 2.2 V, maintaining data integrity during battery sag events. Use Value: 1.5 V data retention threshold ensures memory contents survive brown-out conditions common in energy-harvesting wearables. | Use Scenario: Storing door lock actuator command history and CAN message queue in body domain ECUs exposed to under-hood thermal stress. IC Role / Device Role / Timing Role: Industrial-grade SRAM delivering reliable 45 ns access at –40 °C to +85 °C ambient without derating. Use Value: Dual VCC/VSS ball layout suppresses ground bounce during simultaneous CAN transceiver and motor driver switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-45NLI | 45 ns access, same 256K × 16 organization, but uses 44-pin TSOP-II package and lacks byte power-down feature | Requires PCB redesign for TSOP footprint; no independent byte write control limits flexibility in mixed-data-width systems | Select when board space permits larger TSOP package and byte masking is unnecessary |
| AS6C4008-45TIN | 45 ns access, 256K × 16, but rated only for commercial temp (0 °C to +70 °C) and consumes 12 µA max ISB | Not suitable for extended temperature deployments; higher standby leakage reduces battery lifetime in field-deployed units | Select only for cost-sensitive consumer electronics with controlled indoor environments |
Compared with IS62WV25616BLL-45NLI and AS6C4008-45TIN, CY62147EV30LL-45BVXI uniquely combines industrial temperature support, VFBGA miniaturization, byte-selective write, and sub-7 µA standby - making it optimal for next-generation portable and ruggedized embedded systems where size, power, and reliability are jointly constrained.
Availability
CY62147EV30LL-45BVXI is available at Aetrix Electronics and suitable for cellular modem design, industrial PLC development, and automotive body control module production requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for CY62147EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and small-footprint packaging are primary design drivers.
FAQ
Is CY62147EV30LL-45BVXI pin-compatible with CY62147DV30?
Yes - CY62147EV30LL-45BVXI is fully pin-compatible with CY62147DV30 in the same 48-ball VFBGA package. Both share identical pin assignments, electrical characteristics, and functional behavior, enabling seamless drop-in replacement without PCB modification or firmware changes.
What is the maximum clock frequency supported for synchronous read/write operations?
The device does not require a clock signal - it is an asynchronous SRAM. Its 45 ns access time defines the minimum cycle period: maximum effective throughput is ~22.2 MHz for consecutive random accesses. Synchronous controllers must observe tRC ≥ 45 ns and meet all setup/hold timing windows per the datasheet's switching characteristics table.
Does the VFBGA package support reflow soldering per JEDEC J-STD-020?
Yes - the 48-ball VFBGA package is qualified for standard lead-free reflow profiles per JEDEC J-STD-020D. Peak temperature is 260 °C, with moisture sensitivity level (MSL) rated at Level 3, requiring bake-out if floor life exceeds 168 hours after seal opening.
Can BHE and BLE be tied permanently to enable full 16-bit writes?
Yes - tying both BHE and BLE LOW enables full 16-bit parallel writes across I/O0–I/O15. This configuration matches standard 16-bit bus operation and eliminates byte masking overhead. Ensure proper termination and signal integrity on both byte-enable lines to avoid partial writes due to skew or noise.
CY62147EV30LL-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147EV30LL-45BVXI FAQ
1.How can I place an order for CY62147EV30LL-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147EV30LL-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147EV30LL-45BVXI reliable?
The price and inventory of CY62147EV30LL-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147EV30LL-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62147EV30LL-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147EV30LL-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147EV30LL-45BVXI?
CY62147EV30LL-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147EV30LL-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147EV30LL-45BVXI?
For technical support, including CY62147EV30LL-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147EV30LL-45BVXI requirements.
6.How does Aetrix verify that CY62147EV30LL-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62147EV30LL-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147EV30LL-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62147EV30LL-45BVXI?
All CY62147EV30LL-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147EV30LL-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147EV30LL-45BVXI part is unused and in its original packaging.
Return procedure for CY62147EV30LL-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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