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Infineon Technologies CY62147EV30LL-45ZSXI
- Part No.:
- CY62147EV30LL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147EV30LL-45ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:870
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Product details
Overview
CY62147EV30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (2.5 µA typ), byte power-down capability, and automatic power-down on deselection-designed for battery-sensitive MoBL® applications including portable medical monitors and handheld test equipment.
For engineers reviewing the CY62147EV30LL-45ZSXI datasheet, CY62147EV30LL-45ZSXI pinout, CY62147EV30LL-45ZSXI application, or CY62147EV30LL-45ZSXI equivalent, key selection criteria include its dual CE/BHE/ BLE control architecture, VFBGA-48 package compatibility, 16-bit data bus width, and guaranteed ISB2 ≤ 7 µA at industrial temperature.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with independent byte enable (BHE/BLE) control for selective 8-bit writes and reads. Its logic supports four active modes: full-word read/write, low-byte only, high-byte only, and automatic high-impedance output disable during CE/OE/BHE/BLE deassertion.
The device uses CMOS circuitry optimized for speed-power trade-off, with internal power-down circuitry activated when CE is HIGH or both BHE and BLE are HIGH-reducing ICC by >99% versus active mode. It requires no refresh and retains data down to 1.5 V VCC in retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K × 16); supports 16-bit parallel interface without external data multiplexing |
| Access time | 45 ns max; enables reliable operation with microcontrollers running at ≤22 MHz bus clock |
| Supply voltage | 2.2 V to 3.6 V; compatible with Li-ion battery discharge curve and 3.3 V system rails |
| Standby current | 7 µA max (industrial); allows multi-year battery life in always-on sensor nodes |
| Operating current | 6 mA max at f = fmax; limits thermal rise in sealed enclosures |
| Data retention VCC | 1.5 V min; permits graceful shutdown and fast wake-up from deep sleep states |
| Temperature range | –40 °C to +85 °C; qualified for industrial-grade embedded control and instrumentation |
Pinout & Package
Package: 48-ball very fine ball grid array (VFBGA), 5.0 mm × 5.0 mm × 1.0 mm, single CE configuration (ZSXI suffix denotes this variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A16/A17 used for bank expansion in higher-density variants |
| I/O0–I/O7 | Data bus (low byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; isolated during high-byte operations |
| I/O8–I/O15 | Data bus (high byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; operates independently of low-byte path |
| CE | Chip enable | Active-LOW global select; forces all outputs to high-Z and activates auto power-down when HIGH |
| OE | Output enable | Active-LOW read strobe; controls output drivers but not power state; may float if unused |
| WE | Write enable | Active-LOW write strobe; initiates write cycle when CE = LOW; timing-critical for setup/hold compliance |
| BHE, BLE | Byte high/low enable | Independent 8-bit write/read gating; both HIGH disables I/O drivers and triggers power-down |
| VCC, VSS | Power supply | Dual VCC pins (Balls A1, B1) reduce IR drop; dual VSS (Balls H8, G8) improve ground integrity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® ultra-low power architecture | Reduces active current to 3.5 mA typ at 1 MHz and standby to 2.5 µA typ-enabling >5-year coin-cell operation in logging devices |
| Byte-selectable power-down | Disabling either BHE or BLE alone maintains partial functionality while cutting dynamic power in unused data lanes |
| Automatic high-impedance output control | Outputs enter high-Z on CE HIGH, OE HIGH, BHE/BLE HIGH, or WE LOW-eliminating bus contention without external logic |
| CMOS-compatible input thresholds | VIH = 2.2 V min (at VCC ≥ 2.7 V) and VIL = 0.8 V max ensure robust noise margin with 3.3 V LVTTL and mixed-voltage interfaces |
| Single/dual CE package option | ZSXI suffix confirms single CE pin (not CE1/CE2); simplifies PCB routing and eliminates need for external OR logic |
Applications
| Portable ECG Monitor | Industrial PLC I/O Module |
|---|---|
Use Scenario: Real-time acquisition and buffering of 12-lead analog ECG waveforms at 1 kS/s with on-device FFT preprocessing. IC Role / Device Role / Timing Role: High-speed, low-power SRAM buffer between ADC and ARM Cortex-M4 DSP core; provides deterministic 45 ns read latency for pipeline processing. Use Value: 2.5 µA standby current extends battery life beyond 72 hours per charge; byte-enable isolation prevents corruption during partial register updates. | Use Scenario: Local data caching for distributed I/O scanning in harsh factory environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Non-refreshing memory for status registers, fault logs, and configuration shadow RAM; operates reliably across –40 °C to +85 °C without derating. Use Value: Dual VCC/VSS balls minimize voltage droop during 100 mA digital transients; 45 ns access ensures scan cycle times < 100 µs even at worst-case temperature. |
| Handheld Spectrum Analyzer | Avionics Data Recorder |
Use Scenario: Capturing and post-processing RF IF samples at 20 MS/s using burst-mode acquisition with real-time decimation. IC Role / Device Role / Timing Role: Ping-pong buffer memory for continuous streaming; leverages independent BHE/BLE to interleave high/low byte writes without CPU intervention. Use Value: 45 ns tAA and tDOE guarantee sample-to-memory latency ≤ 45 ns-critical for maintaining Nyquist fidelity in baseband processing. | Use Scenario: Crash-survivable flight data recording where memory must retain critical parameters after power loss and mechanical shock. IC Role / Device Role / Timing Role: Primary volatile working memory with 1.5 V data retention threshold; paired with supercap backup for seamless transition to retention mode. Use Value: ICCDR ≤ 8.8 µA at 1.5 V enables >30-day retention on 0.47 F supercap; tCDR = 0 ns ensures instantaneous entry into retention on main rail collapse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | 10 ns access time, 3.3 V only, 48-pin TSOP-II; higher ICC (18 mA active), no byte power-down | Suitable for high-speed controller buffers where power is secondary to timing margin | Select when system clock > 50 MHz and thermal headroom exists; avoid in battery-powered designs |
| AS6C4008-55ZIN | 55 ns access, 2.7–3.6 V, 44-pin TSOP-II; 12 µA ISB max, no BHE/BLE support | Fits legacy board footprints requiring pin-compatible replacement with minimal layout change | Choose for cost-sensitive industrial upgrades where 55 ns latency is acceptable and byte granularity is unnecessary |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147EV30LL-45ZSXI uniquely balances sub-50 ns speed, ultra-low 7 µA standby, and true 8-bit byte control-making it optimal for next-generation portable instrumentation where energy efficiency and signal integrity are co-constrained.
Availability
CY62147EV30LL-45ZSXI is available at Aetrix Electronics and suitable for portable medical devices, industrial PLC modules, handheld test equipment, and avionics data loggers requiring stable component supply across extended product lifecycles.
Supply support for CY62147EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and memory solutions for industrial, automotive, and IoT applications.
This part belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where extended battery runtime and deterministic timing are mandatory design requirements.
FAQ
What is the maximum clock frequency supported for synchronous interface operation?
CY62147EV30LL-45ZSXI does not use a clock signal-it is an asynchronous SRAM. Its timing is governed by access time (tRC = 45 ns max) and cycle time constraints. Systems can achieve effective throughput up to ~22 MHz when interfacing with microcontrollers using standard address/data strobes, provided setup/hold times (e.g., tSA = 0 ns, tSD = 25 ns) are met in the controller's timing budget.
Can BHE and BLE be tied permanently LOW for full 16-bit operation?
Yes-tying both BHE and BLE LOW enables full 16-bit data transfers on I/O0–I/O15. This configuration matches standard 16-bit bus behavior and is electrically safe. However, doing so forfeits byte-select power savings and independent lane control; for lowest power, assert only the required byte enable during each access.
Is the ZSXI suffix indicative of RoHS compliance and lead-free finish?
Yes. The "Z" in ZSXI denotes lead-free (Pb-free) packaging per JEDEC J-STD-609, and the "SXI" indicates 48-ball VFBGA with single CE configuration and industrial temperature grade. All Infineon-manufactured CY62147EV30LL-45ZSXI units comply with RoHS Directive 2011/65/EU and REACH SVHC requirements.
Does this SRAM require initialization or configuration before first use?
No. CY62147EV30LL-45ZSXI is a fully static, non-volatile-retentive memory with no initialization sequence, register programming, or boot-time configuration. It enters operational state immediately upon valid VCC stabilization (>100 µs ramp time required) and responds to CE/OE/WE transitions per the truth table-no firmware overhead is needed.
CY62147EV30LL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147EV30LL-45ZSXI FAQ
1.How can I place an order for CY62147EV30LL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147EV30LL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147EV30LL-45ZSXI reliable?
The price and inventory of CY62147EV30LL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147EV30LL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62147EV30LL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147EV30LL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147EV30LL-45ZSXI?
CY62147EV30LL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147EV30LL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147EV30LL-45ZSXI?
For technical support, including CY62147EV30LL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147EV30LL-45ZSXI requirements.
6.How does Aetrix verify that CY62147EV30LL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62147EV30LL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147EV30LL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62147EV30LL-45ZSXI?
All CY62147EV30LL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147EV30LL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147EV30LL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62147EV30LL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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