Infineon Technologies CY62147EV30LL-45ZSXIT

Overview

CY62147EV30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (2.5 µA typical), active current of 3.5 mA at 1 MHz, and supports byte-level power-down for portable battery-powered systems.

For engineers reviewing the CY62147EV30LL-45ZSXIT datasheet, CY62147EV30LL-45ZSXIT pinout, CY62147EV30LL-45ZSXIT application, or CY62147EV30LL-45ZSXIT equivalent, key selection criteria include VFBGA-48 package compatibility, dual/quad CE configuration support, MoBL® low-power architecture, and 16-bit data bus interface timing compliance.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 256K words × 16 bits, using CMOS process technology optimized for speed–power trade-off. Its automatic power-down logic activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC by >99% versus active mode.

The device supports independent byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7), with tri-state output control governed by CE, OE, WE, and byte enable states. All switching parameters-including tAA (45 ns), tDOE (22 ns), and tHZOE (18 ns)-are specified over full industrial voltage and temperature range.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), RoHS-compliant, single CE option (ZSXIT suffix denotes this variant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147EV30LL-45ZSXIT uniquely balances 45 ns speed, 2.2–3.6 V flexibility, and sub-3 µA standby-making it optimal for space-constrained, battery-operated edge devices requiring guaranteed industrial reliability.

Availability

CY62147EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial PLC I/O modules, and medical wearable patches requiring stable component supply, long-term lifecycle support, and verified Pb-free VFBGA packaging.

Supply support for CY62147EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where extended battery runtime and robust operation across temperature extremes are critical design requirements.

FAQ

What is the maximum clock frequency supported for burst read operations?

The CY62147EV30LL-45ZSXIT does not use a clock input; it is an asynchronous SRAM. Burst read timing is governed by tRC (45 ns minimum cycle time), permitting up to ~22 MHz sustained random-access throughput. For continuous sequential reads, address setup/hold and tOHA (10 ns) allow effective rates approaching 25 MHz under ideal bus loading.

Does this part support true dual CE operation in the ZSXIT package?

No. The ZSXIT suffix explicitly denotes the single CE variant in 48-ball VFBGA. Dual CE (CE1/CE2) functionality is only available in the ZSXI variant. Pinout diagrams in the datasheet confirm CE is a single terminal (ball D2) in ZSXIT; no CE1/CE2 pins are present or bonded.

Can I operate the device at 1.8 V for ultra-low-power sleep mode?

No. The absolute minimum VCC for functional operation is 2.2 V per datasheet Section 4 (Operating Range). While data retention is guaranteed down to 1.5 V, active read/write operations require ≥2.2 V. Operating below 2.2 V may cause timing violations, data corruption, or undefined output states.

How is the byte power-down feature implemented physically?

Byte power-down is achieved through internal gating of the sense amplifier and data driver circuits for each 8-bit segment. When BHE or BLE is HIGH, their respective 8-bit I/O path is disabled at the driver output stage and sense amp bias is reduced-cutting dynamic current without affecting the core memory cell array, which remains fully powered and retained.