Infineon Technologies CY62147G18-55BVXI

Overview

CY62147G18-55BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 55 ns access time across 1.65–2.2 V supply. It features TTL-compatible I/Os, ERR pin for ECC event indication, and ultra-low standby current (3.5 µA typical). Used in industrial control modules requiring data integrity under voltage scaling and extended temperature operation.

For engineers reviewing the CY62147G18-55BVXI datasheet, CY62147G18-55BVXI pinout, CY62147G18-55BVXI application, or CY62147G18-55BVXI equivalent, key selection criteria include ECC-enabled memory reliability, dual-chip-enable support for bank isolation, 48-ball VFBGA packaging for high-density PCB layouts, and compatibility with 1.8 V logic systems.

Technical Context

This SRAM implements a synchronous, byte-selectable architecture with independent BHE/ BLE controls enabling upper- and lower-byte writes without full-word access. The integrated ECC engine performs real-time single-bit correction on read cycles and asserts the ERR pin upon detection-no automatic write-back is supported.

It supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), with this variant specified for 1.65–2.2 V operation. Standby power is reduced via Byte Power Down mode: asserting both BHE and BLE LOW forces immediate transition to ISB2 (≤10 µA max), independent of CE state.

Key Specifications

Pinout & Package

48-ball VFBGA package (ball pitch: 0.5 mm, body size: 6.0 mm × 8.0 mm, thickness: 0.75 mm). Pinout corresponds to CY62147G dual CE configuration without ERR pin (ordering suffix "X" indicates no ERR function).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-55IT:D, CY62147G18-55BVXI delivers guaranteed single-bit correction with zero software dependency, deterministic 55 ns access, and true static operation-critical for real-time control and safety-certified designs where refresh cycles or external ECC logic introduce unacceptable risk.

Availability

CY62147G18-55BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics display interfaces requiring stable component supply, long-term lifecycle assurance, and verified ECC functionality.

Supply support for CY62147G18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY62147G belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, ECC-enhanced data storage in space-constrained industrial and transportation systems.

FAQ

Does CY62147G18-55BVXI support automatic error correction write-back?

No. The device corrects single-bit errors during read operations and asserts the ERR pin, but does not perform automatic write-back to the memory array. Correction is transparent to the read data path only; the original corrupted bit remains unmodified in the array unless rewritten by the host system.

What is the function of the Byte Power Down mode?

When both BHE and BLE are held LOW while the device is deselected, CY62147G18-55BVXI enters a deep standby state with ISB2 ≤10 µA, regardless of CE1/CE2 states. This feature eliminates need for external power gating and reduces leakage in partial-sleep system architectures.

Is the ERR pin present on CY62147G18-55BVXI?

No. The "X" in the ordering code CY62147G18-55BVXI denotes the standard CY62147G variant without ERR pin. Only CY62147GE variants (e.g., CY62147GE18-55BVXI) include the ERR output. This part uses dual CE and relies on external monitoring of system-level parity or checksums.

Can CY62147G18-55BVXI operate at 1.0 V?

No. Minimum operating V_CC is 1.65 V. However, it supports 1.0 V data retention - meaning stored data remains valid when V_CC is reduced to 1.0 V during standby, provided ambient temperature stays within specification limits.