Infineon Technologies CY62147G18-55BVXIT
- Part No.:
- CY62147G18-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147G18-55BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62147G18-55BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16-bit, operating at 55 ns access time across 1.65–2.2 V supply. It features TTL-compatible I/Os, ERR output for ECC event indication, and ultra-low standby current (3.5 µA typical). Used in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.
For engineers reviewing the CY62147G18-55BVXIT datasheet, CY62147G18-55BVXIT pinout, CY62147G18-55BVXIT application, or CY62147G18-55BVXIT equivalent, key selection factors include ECC-enabled reliability, dual/single chip enable flexibility, 48-ball VFBGA package compatibility, and multi-voltage support (1.65–2.2 V) for low-power embedded systems.
Technical Context
This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, with dedicated ERR pin assertion (HIGH) signaling correction events. The memory array uses standard CMOS architecture with row/column decoding and sense amplifiers optimized for low-voltage operation.
It supports byte-level write control via BHE/ BLE inputs, HI-Z tri-state outputs during deselection, and seamless Byte Power Down mode when both byte enables are inactive - enabling dynamic power gating independent of CE state. Address range spans A0–A17 (18 bits), supporting full 256K-word addressing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16-bit) - provides 512 KB of word-accessible storage for firmware buffers or real-time data logging |
| Access Time | 55 ns - ensures deterministic timing for microcontroller interfaces running up to 18.18 MHz bus frequency |
| VCC Range | 1.65 V to 2.2 V - compatible with modern low-voltage SoC domains and battery-backed subsystems |
| Standby Current | 3.5 µA typical - enables >10-year data retention in always-on industrial nodes with coin-cell backup |
| ECC Function | Single-bit error detection and correction - eliminates soft-error-induced crashes in mission-critical edge devices |
| ERR Pin | Dedicated open-drain output asserted HIGH on correction - allows host MCU to log or flag memory integrity events without polling |
| Data Retention | 1.0 V minimum - supports extended hold mode during brown-out or sleep states without external refresh |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decode; no internal latching - requires stable address before CE/OE assertion |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface with TTL-compatible voltage thresholds; HI-Z when CE/OE/BLE/BHE inactive |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 required for device selection - enables hierarchical memory mapping in multi-SRAM systems |
| WE | Write Enable | Active-LOW control for write cycles; sampled synchronously with address and byte enables to avoid partial writes |
| OE | Output Enable | Active-LOW control for read data output; independent of CE state but gated by chip select for bus isolation |
| BHE, BLE | Byte High/Low Enable | Active-LOW controls upper/lower byte writes or reads - enables 8-bit peripheral interfacing without data masking logic |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit correction - requires external pull-up; no glitch filtering built-in |
| VCC, VSS | Power Supply Pins | Separate core and ground pins per ball map - minimizes simultaneous switching noise in high-speed access |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | On-die Hamming-code encoder/decoder corrects single-bit errors in real time without CPU intervention or additional latency |
| Byte Power Down Mode | Automatic entry into ultra-low-power standby when BHE and BLE are both de-asserted - reduces leakage without software coordination |
| Multi-Voltage Support | Single device operates across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - simplifies BOM consolidation across product variants |
| TTL-Compatible I/O | Input thresholds and output drive meet JEDEC JESD8-12 standards - interoperable with legacy 3.3 V and 5 V controllers |
| Industrial Temperature Range | Rated for –40 °C to +85 °C operation - qualified for use in motor drives, PLC backplanes, and outdoor telemetry units |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Logger |
|---|---|
Use Scenario: Stores real-time sensor fusion results and control loop history in programmable logic controllers with no external ECC controller. IC Role / Device Role / Timing Role: Primary working memory with hardware-level error resilience; replaces external parity RAM + FPGA logic. Use Value: Eliminates uncorrectable memory errors in 24/7 factory automation - reducing unplanned downtime by preventing silent data corruption. |
Use Scenario: Captures time-stamped ECG waveform segments in portable diagnostic equipment during battery-powered operation. IC Role / Device Role / Timing Role: Low-voltage SRAM buffer holding raw analog-to-digital samples prior to compression and wireless upload. Use Value: 1.65–2.2 V operation extends battery life; ECC prevents misdiagnosis due to cosmic-ray-induced bit flips in stored waveforms. |
| Railway Signaling Controller Cache | Avionics Health Monitor Buffer |
Use Scenario: Holds critical interlocking logic state tables in EN 5012x-certified signaling cabinets exposed to wide thermal cycling. IC Role / Device Role / Timing Role: Non-refreshed static memory with guaranteed 1.0 V data retention during power interruption events. Use Value: Maintains fail-safe state integrity during brief grid dips - meeting SIL-3 requirements for safety-critical railway infrastructure. |
Use Scenario: Buffers flight sensor health metrics (vibration, temperature, pressure) in UAV flight controllers with constrained PCB area. IC Role / Device Role / Timing Role: Compact 48-ball VFBGA SRAM providing ECC-protected storage for black-box telemetry snapshots. Use Value: 6 mm × 8 mm footprint saves board space; ERR pin enables autonomous fault reporting without host processor overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616BLL-10MLI | No embedded ECC; requires external error-handling logic or software correction | Suitable only where system-level ECC is already implemented or soft errors are non-critical | Select when cost sensitivity outweighs reliability requirements and board space permits external logic |
| Micron MT45W8MW16BGX-55 IT:B | DDR2 SDRAM with optional ECC mode; requires clocked interface and refresh management | Applicable in higher-bandwidth systems with DDR-capable controllers; not pin-compatible | Choose only if migrating to synchronous DRAM architecture and redesigning memory controller firmware |
Compared with IS61WV25616BLL-10MLI and MT45W8MW16BGX-55 IT:B, CY62147G18-55BVXIT delivers integrated, zero-latency ECC correction in an asynchronous SRAM footprint - eliminating design complexity and validation effort for safety-critical embedded memory.
Availability
CY62147G18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, railway signaling systems, and avionics health monitors requiring stable component supply and long-term lifecycle assurance.
Supply support for CY62147G18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and reliable memory solutions for industrial and safety-critical applications.
CY62147G18-55BVXIT belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for battery-constrained and radiation-sensitive embedded systems demanding error-resilient, non-volatile-equivalent data storage without refresh overhead.
FAQ
Does CY62147G18-55BVXIT support automatic error write-back after correction?
No. The device performs single-bit error detection and correction during read cycles but does not automatically write the corrected data back to the memory array. Host firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the ERR pin, and how is it electrically configured?
The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and remains inactive (HIGH-Z) otherwise. Its timing aligns with read data validity, allowing synchronous sampling by the host controller without additional strobes.
Can CY62147G18-55BVXIT operate across multiple VCC ranges simultaneously?
No. The device must be powered from a single VCC rail within one of three specified ranges: 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. Internal voltage regulation is not provided, and mixing rails violates absolute maximum ratings. The selected range determines AC timing parameters and DC current consumption values.
Is the 48-ball VFBGA package of CY62147G18-55BVXIT compatible with standard reflow profiles?
Yes. The package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Board layout must follow Infineon's recommended pad stack and stencil design guidelines in Package Diagrams (page 19 of datasheet) to ensure solder joint reliability.
CY62147G18-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.8V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147G18-55BVXIT FAQ
1.How can I place an order for CY62147G18-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147G18-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147G18-55BVXIT reliable?
The price and inventory of CY62147G18-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G18-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147G18-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G18-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147G18-55BVXIT?
CY62147G18-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147G18-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147G18-55BVXIT?
For technical support, including CY62147G18-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G18-55BVXIT requirements.
6.How does Aetrix verify that CY62147G18-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147G18-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G18-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147G18-55BVXIT?
All CY62147G18-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G18-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147G18-55BVXIT part is unused and in its original packaging.
Return procedure for CY62147G18-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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