Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62147G18-55BVXIT

Part No.:
CY62147G18-55BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62147G18-55BVXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,982

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62147G18-55BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16-bit, operating at 55 ns access time across 1.65–2.2 V supply. It features TTL-compatible I/Os, ERR output for ECC event indication, and ultra-low standby current (3.5 µA typical). Used in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.

For engineers reviewing the CY62147G18-55BVXIT datasheet, CY62147G18-55BVXIT pinout, CY62147G18-55BVXIT application, or CY62147G18-55BVXIT equivalent, key selection factors include ECC-enabled reliability, dual/single chip enable flexibility, 48-ball VFBGA package compatibility, and multi-voltage support (1.65–2.2 V) for low-power embedded systems.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, with dedicated ERR pin assertion (HIGH) signaling correction events. The memory array uses standard CMOS architecture with row/column decoding and sense amplifiers optimized for low-voltage operation.

It supports byte-level write control via BHE/ BLE inputs, HI-Z tri-state outputs during deselection, and seamless Byte Power Down mode when both byte enables are inactive - enabling dynamic power gating independent of CE state. Address range spans A0–A17 (18 bits), supporting full 256K-word addressing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size4 Mbit (256K × 16-bit) - provides 512 KB of word-accessible storage for firmware buffers or real-time data logging
Access Time55 ns - ensures deterministic timing for microcontroller interfaces running up to 18.18 MHz bus frequency
VCC Range1.65 V to 2.2 V - compatible with modern low-voltage SoC domains and battery-backed subsystems
Standby Current3.5 µA typical - enables >10-year data retention in always-on industrial nodes with coin-cell backup
ECC FunctionSingle-bit error detection and correction - eliminates soft-error-induced crashes in mission-critical edge devices
ERR PinDedicated open-drain output asserted HIGH on correction - allows host MCU to log or flag memory integrity events without polling
Data Retention1.0 V minimum - supports extended hold mode during brown-out or sleep states without external refresh

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word decode; no internal latching - requires stable address before CE/OE assertion
I/O0–I/O15Bidirectional Data Bus16-bit parallel interface with TTL-compatible voltage thresholds; HI-Z when CE/OE/BLE/BHE inactive
CE1, CE2Dual Chip Enable InputsActive-LOW CE1 and active-HIGH CE2 required for device selection - enables hierarchical memory mapping in multi-SRAM systems
WEWrite EnableActive-LOW control for write cycles; sampled synchronously with address and byte enables to avoid partial writes
OEOutput EnableActive-LOW control for read data output; independent of CE state but gated by chip select for bus isolation
BHE, BLEByte High/Low EnableActive-LOW controls upper/lower byte writes or reads - enables 8-bit peripheral interfacing without data masking logic
ERRError Indication OutputOpen-drain output asserted HIGH during single-bit correction - requires external pull-up; no glitch filtering built-in
VCC, VSSPower Supply PinsSeparate core and ground pins per ball map - minimizes simultaneous switching noise in high-speed access

Key Features

Feature Design Value
Embedded ECC EngineOn-die Hamming-code encoder/decoder corrects single-bit errors in real time without CPU intervention or additional latency
Byte Power Down ModeAutomatic entry into ultra-low-power standby when BHE and BLE are both de-asserted - reduces leakage without software coordination
Multi-Voltage SupportSingle device operates across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - simplifies BOM consolidation across product variants
TTL-Compatible I/OInput thresholds and output drive meet JEDEC JESD8-12 standards - interoperable with legacy 3.3 V and 5 V controllers
Industrial Temperature RangeRated for –40 °C to +85 °C operation - qualified for use in motor drives, PLC backplanes, and outdoor telemetry units

Applications

Industrial PLC Memory Buffer Medical Diagnostic Data Logger

Use Scenario: Stores real-time sensor fusion results and control loop history in programmable logic controllers with no external ECC controller.

IC Role / Device Role / Timing Role: Primary working memory with hardware-level error resilience; replaces external parity RAM + FPGA logic.

Use Value: Eliminates uncorrectable memory errors in 24/7 factory automation - reducing unplanned downtime by preventing silent data corruption.

Use Scenario: Captures time-stamped ECG waveform segments in portable diagnostic equipment during battery-powered operation.

IC Role / Device Role / Timing Role: Low-voltage SRAM buffer holding raw analog-to-digital samples prior to compression and wireless upload.

Use Value: 1.65–2.2 V operation extends battery life; ECC prevents misdiagnosis due to cosmic-ray-induced bit flips in stored waveforms.

Railway Signaling Controller Cache Avionics Health Monitor Buffer

Use Scenario: Holds critical interlocking logic state tables in EN 5012x-certified signaling cabinets exposed to wide thermal cycling.

IC Role / Device Role / Timing Role: Non-refreshed static memory with guaranteed 1.0 V data retention during power interruption events.

Use Value: Maintains fail-safe state integrity during brief grid dips - meeting SIL-3 requirements for safety-critical railway infrastructure.

Use Scenario: Buffers flight sensor health metrics (vibration, temperature, pressure) in UAV flight controllers with constrained PCB area.

IC Role / Device Role / Timing Role: Compact 48-ball VFBGA SRAM providing ECC-protected storage for black-box telemetry snapshots.

Use Value: 6 mm × 8 mm footprint saves board space; ERR pin enables autonomous fault reporting without host processor overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV25616BLL-10MLINo embedded ECC; requires external error-handling logic or software correctionSuitable only where system-level ECC is already implemented or soft errors are non-criticalSelect when cost sensitivity outweighs reliability requirements and board space permits external logic
Micron MT45W8MW16BGX-55 IT:BDDR2 SDRAM with optional ECC mode; requires clocked interface and refresh managementApplicable in higher-bandwidth systems with DDR-capable controllers; not pin-compatibleChoose only if migrating to synchronous DRAM architecture and redesigning memory controller firmware

Compared with IS61WV25616BLL-10MLI and MT45W8MW16BGX-55 IT:B, CY62147G18-55BVXIT delivers integrated, zero-latency ECC correction in an asynchronous SRAM footprint - eliminating design complexity and validation effort for safety-critical embedded memory.

Availability

CY62147G18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, railway signaling systems, and avionics health monitors requiring stable component supply and long-term lifecycle assurance.

Supply support for CY62147G18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and reliable memory solutions for industrial and safety-critical applications.

CY62147G18-55BVXIT belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for battery-constrained and radiation-sensitive embedded systems demanding error-resilient, non-volatile-equivalent data storage without refresh overhead.

FAQ

Does CY62147G18-55BVXIT support automatic error write-back after correction?

No. The device performs single-bit error detection and correction during read cycles but does not automatically write the corrected data back to the memory array. Host firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.

What is the function of the ERR pin, and how is it electrically configured?

The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and remains inactive (HIGH-Z) otherwise. Its timing aligns with read data validity, allowing synchronous sampling by the host controller without additional strobes.

Can CY62147G18-55BVXIT operate across multiple VCC ranges simultaneously?

No. The device must be powered from a single VCC rail within one of three specified ranges: 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. Internal voltage regulation is not provided, and mixing rails violates absolute maximum ratings. The selected range determines AC timing parameters and DC current consumption values.

Is the 48-ball VFBGA package of CY62147G18-55BVXIT compatible with standard reflow profiles?

Yes. The package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Board layout must follow Infineon's recommended pad stack and stencil design guidelines in Package Diagrams (page 19 of datasheet) to ensure solder joint reliability.

CY62147G18-55BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
1.8V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62147G18-55BVXIT FAQ

1.How can I place an order for CY62147G18-55BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147G18-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147G18-55BVXIT reliable?

The price and inventory of CY62147G18-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G18-55BVXIT is usually 5 days.

3.What payment methods are accepted for CY62147G18-55BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G18-55BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147G18-55BVXIT?

CY62147G18-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147G18-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147G18-55BVXIT?

For technical support, including CY62147G18-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G18-55BVXIT requirements.

6.How does Aetrix verify that CY62147G18-55BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62147G18-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G18-55BVXIT meets industry standards.

7.What is the process for return or replacement of CY62147G18-55BVXIT?

All CY62147G18-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G18-55BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147G18-55BVXIT part is unused and in its original packaging.

Return procedure for CY62147G18-55BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62147G18-55BVXIT Tags

  • CY62147G18-55BVXIT
  • CY62147G18-55BVXIT PDF
  • CY62147G18-55BVXIT Datasheet
  • CY62147G18-55BVXIT Specifications
  • CY62147G18-55BVXIT Images
  • Infineon Technologies
  • Infineon Technologies CY62147G18-55BVXIT
  • Buy CY62147G18-55BVXIT
  • CY62147G18-55BVXIT Price
  • CY62147G18-55BVXIT Distributor
  • CY62147G18-55BVXIT Supplier
  • CY62147G18-55BVXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER