Infineon Technologies CY62147G18-55ZSXI

Overview

CY62147G18-55ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 55 ns access time across 1.65–2.2 V supply. It features TTL-compatible I/Os, ERR output for ECC event indication, and dual chip enable (CE1/CE2) logic. Used in industrial control modules requiring data integrity under voltage scaling and extended temperature operation.

For engineers reviewing the CY62147G18-55ZSXI datasheet, CY62147G18-55ZSXI pinout, CY62147G18-55ZSXI application, or CY62147G18-55ZSXI equivalent, key selection criteria include ECC-enabled reliability, 55 ns timing at 1.8 V, ultra-low 3.5 µA typical standby current, and compatibility with 44-pin TSOP II footprint in industrial-grade (-40°C to +85°C) systems.

Technical Context

This SRAM implements a synchronous, byte-selectable memory architecture with independent BHE/ BLE controls for upper/lower 8-bit writes and reads. Its ECC engine performs real-time single-bit correction on every read cycle without automatic write-back, and asserts the ERR pin high upon detection - a hardware-level fault signaling mechanism distinct from software-managed parity schemes.

The device supports three V_CC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), with this variant optimized for 1.65–2.2 V operation at 55 ns. Its Byte Power Down feature enables automatic transition to standby when both BHE and BLE are deasserted - independent of CE state - delivering sub-µA retention power at 1.0 V.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II), RoHS-compliant, surface-mount, 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV25616BLL-55MLI and N25S80A16T150I, CY62147G18-55ZSXI uniquely delivers hardware ECC with zero software overhead and 1.8 V operation - critical for safety-certified industrial and medical edge devices where both power efficiency and deterministic error handling are mandatory.

Availability

CY62147G18-55ZSXI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic instruments, railway signaling loggers, and avionics health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY62147G18-55ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and safety-critical focus.

CY62147G belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-voltage, low-power, high-reliability embedded systems where data integrity and extended temperature operation are non-negotiable.

FAQ

Does CY62147G18-55ZSXI support automatic error correction write-back?

No. The device corrects single-bit errors in real time during read operations but does not perform automatic write-back to memory. Corrected data appears on I/O lines, and the host system must initiate any write to persist the corrected value. This design avoids unintended overwrites and preserves deterministic timing behavior.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that goes HIGH when a single-bit error is detected and corrected during a read cycle. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) and can directly drive interrupt inputs or status registers. It remains LOW during normal operation and is not asserted for multi-bit errors.

Can CY62147G18-55ZSXI operate at 3.3 V, and what speed grade applies?

Yes - it supports 2.2 V to 3.6 V operation, but the "18" in the part number denotes the 1.65–2.2 V voltage range. At 3.3 V, the device must be ordered as CY62147G30-45ZSXI (45 ns, 3.0 V optimized). Using CY62147G18-55ZSXI at 3.3 V violates datasheet specifications and may cause timing violations or increased leakage.

How does Byte Power Down mode interact with chip enable signals?

Byte Power Down activates independently of CE1/CE2 states: when both BHE and BLE are HIGH (deasserted), the device enters standby regardless of CE1/CE2 levels. This allows dynamic power gating during idle byte-access windows without requiring reconfiguration of chip select logic - reducing system-level power management complexity.