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Infineon Technologies CY62147G18-55ZSXIT

Part No.:
CY62147G18-55ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62147G18-55ZSXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,455

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

CY62147G18-55ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16-bit, operating at 55 ns access time across 1.65–2.2 V supply. It features TTL-compatible I/Os, ERR output for ECC event indication, and ultra-low standby current (3.5 µA typical). Used in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.

For engineers reviewing the CY62147G18-55ZSXIT datasheet, CY62147G18-55ZSXIT pinout, CY62147G18-55ZSXIT application, or CY62147G18-55ZSXIT equivalent, key selection criteria include ECC-enabled reliability, dual-chip-enable support, 48-ball VFBGA package compatibility, and 1.65–2.2 V low-voltage operation for power-constrained embedded systems.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without automatic write-back. The ERR pin asserts HIGH upon correction, enabling system-level fault logging. Memory array uses standard CMOS six-transistor cells with row/column decoding and sense amplifiers optimized for low-power, high-speed random access.

It supports byte-wide writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and enters seamless standby when both byte enables are deasserted - independent of CE state. Dual CE architecture (CE1/CE2) allows hierarchical memory mapping in multi-bank systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K words × 16-bit) - supports 512 KB of word-aligned data storage with ECC protection per 16-bit access.
Access Time 55 ns - guarantees maximum read latency at 1.65–2.2 V supply, enabling interface with legacy microcontrollers running ≤18 MHz.
Supply Voltage Range 1.65 V to 2.2 V - enables direct integration with 1.8 V core logic domains while maintaining full functionality and ECC operation.
Standby Current 3.5 µA typical - reduces quiescent power in always-on industrial nodes; meets battery-backed retention requirements.
ECC Function Single-bit error correction with ERR output - provides real-time detection/correction without software overhead or memory controller dependency.
Data Retention 1.0 V minimum - allows retention during brown-out events down to 1.0 V, supporting graceful shutdown and nonvolatile backup scenarios.
Package 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - surface-mount footprint compatible with automated PCB assembly and space-constrained edge devices.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting 256K-word addressing; A0–A17 fully decoded for linear memory mapping.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; supports simultaneous read/write of full word or byte-selectable access via BHE/ BLE.
CE1, CE2 Dual Chip Enable Inputs Active-LOW CE1 and active-HIGH CE2 enable hierarchical chip selection; required for multi-SRAM bank configurations.
WE Write Enable Active-LOW signal initiating write cycle; latches data on I/O lines into addressed location when CE and OE are asserted appropriately.
OE Output Enable Active-LOW control enabling read data onto I/O lines; places outputs in HI-Z when deasserted to prevent bus contention.
BHE, BLE Byte Enable Controls BHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7); both LOW forces standby mode regardless of CE state.
ERR Error Indication Output Open-drain active-HIGH output signaling successful single-bit correction during last read; requires external pull-up for logic-level compliance.
VCC, VSS Power Supply Pins VCC supplies core and I/O voltage (1.65–2.2 V); VSS is ground reference; two VCC and two VSS balls ensure low-impedance supply routing.

Key Features

Feature Design Value
Embedded ECC Engine Hardware-accelerated single-bit error correction with no CPU intervention; SER FIT rate <0.1 FIT/Mb ensures high reliability in mission-critical storage.
Byte Power Down Automatic transition to ultra-low-power standby when BHE and BLE are both deasserted - eliminates need for external power management logic.
TTL-Compatible I/O Supports direct interfacing with legacy 1.8 V/3.3 V microcontrollers and FPGAs without level-shifting circuitry.
Multi-Voltage Operation Single device supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V ranges - simplifies BOM consolidation across product variants.
Industrial Temperature Range Rated for –40 °C to +85 °C operation - validated for use in factory automation, motor drives, and outdoor telemetry equipment.

Applications

Industrial PLC Data Buffer Medical Diagnostic Imaging Cache

Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: High-reliability SRAM providing ECC-protected scratchpad memory for transient process variables and alarm history logs.

Use Value: Prevents silent data corruption in long-running control loops; 55 ns access aligns with 20 ms PLC scan timing budgets.

Use Scenario: Temporary frame storage in portable ultrasound or X-ray imaging subsystems before compression and transmission.

IC Role / Device Role / Timing Role: Low-power, radiation-tolerant buffer holding raw pixel data during analog-to-digital conversion bursts.

Use Value: 1.0 V data retention enables safe hold during brief power interruptions; ECC mitigates soft errors induced by ambient ionizing radiation.

Railway Signaling Event Logger Smart Grid Fault Recorder

Use Scenario: Timestamped logging of track occupancy, switch position, and signal aspect changes in EN 5012x-certified signaling hardware.

IC Role / Device Role / Timing Role: Nonvolatile-capable SRAM retaining critical event records during mains failure until backup power engages.

Use Value: Ultra-low 3.5 µA standby current extends battery runtime; ERR pin enables diagnostic flagging of memory integrity issues pre-deployment.

Use Scenario: Capturing waveform transients during grid disturbances (e.g., lightning strikes, capacitor switching) in distribution automation terminals.

IC Role / Device Role / Timing Role: High-speed capture buffer synchronizing with ADC sampling clocks up to 18 MHz (55 ns cycle).

Use Value: Dual CE architecture allows interleaved access with other memory banks; 16-bit bus width matches common DSP data paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV25616EDBLL-10MLI No embedded ECC; requires external error-handling logic or controller-based correction. Lacks hardware-level error reporting; suitable only where system-level ECC is already implemented. Select if cost sensitivity outweighs need for autonomous error handling and ERR signaling.
AS6C4008-55ZIN 4-Mbit × 8-bit organization; no ECC; 55 ns access at 2.7–3.6 V only - incompatible with 1.8 V domain. Requires bus-width adaptation (two chips for 16-bit) and lacks voltage flexibility for mixed-supply designs. Choose only for legacy 3.3 V-only systems without ECC requirements and space for dual-package layout.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147G18-55ZSXIT uniquely delivers integrated ECC, 1.65–2.2 V operation, and ERR signaling in a single 48-ball VFBGA - eliminating external logic, reducing board area, and enabling fail-safe data integrity in safety-critical industrial edge nodes.

Availability

CY62147G18-55ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging caches, railway event loggers, and smart grid fault recorders requiring stable component supply across extended product lifecycles.

Supply support for CY62147G18-55ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

CY62147G18-55ZSXIT belongs to the MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-power, high-reliability embedded systems where data integrity, voltage flexibility, and compact packaging are essential.

FAQ

Does CY62147G18-55ZSXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles but does not automatically write the corrected data back to memory. System firmware must handle write-back if persistent correction is required. This design minimizes internal complexity and power consumption while retaining full ECC detection and correction capability on every read access.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that asserts HIGH when a single-bit error is detected and corrected during a read operation. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to establish a valid logic HIGH level. The signal remains asserted for one clock cycle after correction and can trigger interrupt-driven diagnostics in host controllers.

Can CY62147G18-55ZSXIT operate reliably at 1.65 V with full timing specifications?

Yes. The 55 ns access time, ECC functionality, and all DC/AC electrical parameters are fully specified and guaranteed over the entire 1.65 V to 2.2 V range. Typical ICC operating current is 15 mA and standby current is 3.5 µA at 1.8 V, confirming robust low-voltage operation without derating.

Is the 48-ball VFBGA package of CY62147G18-55ZSXIT compatible with standard reflow profiles?

Yes. The RoHS-compliant, lead-free 48-ball VFBGA adheres to IPC/JEDEC J-STD-020D moisture sensitivity level 3 (MSL3) and supports standard Pb-free reflow profiles with peak temperature up to 260 °C. Board layout must follow Infineon's recommended pad stack and stencil design guidelines to ensure solder joint reliability.

CY62147G18-55ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62147G18-55ZSXIT FAQ

1.How can I place an order for CY62147G18-55ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147G18-55ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147G18-55ZSXIT reliable?

The price and inventory of CY62147G18-55ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G18-55ZSXIT is usually 5 days.

3.What payment methods are accepted for CY62147G18-55ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G18-55ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147G18-55ZSXIT?

CY62147G18-55ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147G18-55ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147G18-55ZSXIT?

For technical support, including CY62147G18-55ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G18-55ZSXIT requirements.

6.How does Aetrix verify that CY62147G18-55ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY62147G18-55ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G18-55ZSXIT meets industry standards.

7.What is the process for return or replacement of CY62147G18-55ZSXIT?

All CY62147G18-55ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G18-55ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147G18-55ZSXIT part is unused and in its original packaging.

Return procedure for CY62147G18-55ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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