Infineon Technologies CY62147G30-45B2XI

Overview

CY62147G30-45B2XI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded ECC, configured as 256K × 16-bit, operating at 45 ns access time across 2.2 V–3.6 V supply range. It features TTL-compatible I/Os, ERR pin for single-bit error detection/correction indication, and dual chip enable (CE1/CE2) logic. Used in industrial control modules requiring data integrity under radiation-prone or long-term reliability-critical conditions.

For engineers reviewing the CY62147G30-45B2XI datasheet, CY62147G30-45B2XI pinout, CY62147G30-45B2XI application, or CY62147G30-45B2XI equivalent, key selection criteria include ECC-enabled memory integrity, ultra-low standby current (≤8.7 µA), dual CE interface timing, byte-level write control via BHE/ BLE, and VFBGA-48 packaging compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a full ECC engine-encoding on write and decoding/correcting on read-with dedicated ERR output asserted HIGH during single-bit correction events. Its architecture supports independent upper- and lower-byte writes using BHE and BLE, enabling efficient 8-bit peripheral interfacing without full 16-bit bus contention.

The device operates across three voltage ranges; this variant is specified for 2.2 V–3.6 V, delivering 45 ns access at f_max = 22.22 MHz. Standby power is minimized via Byte Power Down: asserting both BHE and BLE LOW forces automatic entry into ISB2 mode (≤8.7 µA), regardless of CE state.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm ball pitch, JEDEC MO-249 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55TIN, CY62147G30-45B2XI delivers hardware ECC with deterministic latency, byte-selective power gating, and industrial-grade VFBGA packaging - making it uniquely suited for safety-critical embedded systems where data integrity must be guaranteed at silicon level.

Availability

CY62147G30-45B2XI is available at Aetrix Electronics and suitable for medical imaging buffers, railway event recorders, and avionics health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY62147G30-45B2XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and reliable memory solutions for mission-critical systems.

CY62147G series belongs to Infineon's MoBL® (Mobile Bit-Like) SRAM portfolio, designed specifically for low-power, high-reliability embedded applications where data integrity, fast access, and extended temperature operation are mandatory.

FAQ

Does CY62147G30-45B2XI support automatic error correction without host intervention?

Yes. The device performs full single-bit error correction in hardware during every read cycle. When a correctable error is detected, the ERR pin asserts HIGH, but no external action is required-the corrected data appears on I/O0–I/O15 automatically. No firmware or host CPU involvement is needed for correction, though ERR can trigger optional logging or alert routines.

What is the function of the Byte Power Down feature?

When both BHE and BLE are deasserted (HIGH), the device enters ultra-low-power standby mode (ISB2 ≤8.7 µA) regardless of CE1/CE2 state. This allows dynamic power gating during idle periods in burst-mode applications-such as sensor sampling intervals-without requiring changes to chip enable timing or external power switches.

Can CY62147G30-45B2XI operate reliably at 2.2 V minimum supply?

Yes. The device is fully characterized and guaranteed over 2.2 V–3.6 V, including AC timing (45 ns max), DC parameters (VIH/VIL, VOH/VOL), and ECC functionality at VCC = 2.2 V and TA = 85 °C. All specifications in the datasheet Rev. *K apply across this entire range without derating.

Is the ERR pin open-drain or push-pull?

The ERR pin is an open-drain output requiring an external pull-up resistor (typically 4.7 kΩ to VCC). It asserts LOW when inactive and floats HIGH during single-bit error correction. This configuration allows wired-OR connection to shared interrupt lines and avoids contention in multi-device systems.