Infineon Technologies CY62147G30-45BVXAT

Overview

CY62147G30-45BVXAT from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), rated for –40 °C to +125 °C (Automotive-E grade), 45 ns access time, 2.2–3.6 V supply, and ultra-low 3.5 µA typical standby current. It supports byte-level write control via BHE/ BLE and operates in TSOP II or VFBGA packages.

For engineers reviewing the CY62147G30-45BVXAT datasheet, CY62147G30-45BVXAT pinout, CY62147G30-45BVXAT application, or CY62147G30-45BVXAT equivalent, key selection criteria include ECC-enabled data integrity in safety-critical automotive memory subsystems, dual-chip-enable compatibility, byte power-down capability, and AEC-Q100 qualified operation across extended temperature ranges.

Technical Context

This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder logic integrated into the memory array path, correcting single-bit errors on read without automatic write-back. The device uses TTL-compatible I/Os and supports both single CE (CY62147G) and dual CE (CY621472G) configurations - CY62147G30-45BVXAT corresponds to the dual-CE variant per ordering code "G30" and package suffix "VXAT" (44-pin TSOP II).

Byte power-down is triggered when both BHE and BLE are deasserted, forcing automatic transition to ISB2 standby mode regardless of CE state. Address decoding covers A0–A17 (18-bit), enabling full 256K-word addressing, and data retention remains valid down to 1.0 V at ambient temperatures up to +125 °C.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, body size 10.16 mm × 18.41 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:B, CY62147G30-45BVXAT uniquely delivers AEC-Q100 Grade 0 qualification, on-die ECC, and 1.0 V data retention-critical for ASIL-B/C memory subsystems where deterministic behavior and radiation tolerance are mandatory.

Availability

CY62147G30-45BVXAT is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), engine control units (ECU), and electric vehicle battery management systems requiring stable component supply under extended temperature and safety certification constraints.

Supply support for CY62147G30-45BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 validation infrastructure.

CY62147G/CY621472G belongs to the MoBL® Automotive SRAM product line, engineered specifically for safety-critical automotive subsystems requiring ECC, extended temperature operation, and low-power data retention without external support circuitry.

FAQ

Does CY62147G30-45BVXAT support automatic error correction during write operations?

No. The embedded ECC corrects single-bit errors only on read operations. The device does not perform automatic write-back or error correction during writes, as stated in Note 1 of the datasheet. Error detection occurs during read cycles, and corrected data is presented to the host-but no write transaction is initiated by the SRAM itself.

What is the meaning of the "VXAT" suffix in CY62147G30-45BVXAT?

The "VXAT" suffix denotes a 44-pin TSOP II package (V), automotive temperature range (X), lead-free/RoHS-compliant finish (A), and tape-and-reel packaging (T). This matches Cypress's ordering code definition for CY621472G30 variants in TSOP II with dual chip enable and Automotive-E qualification.

Can CY62147G30-45BVXAT operate reliably at 2.2 V while maintaining 45 ns access time?

Yes. The datasheet specifies 45 ns maximum access time over the full 2.2–3.6 V VCC range and –40 °C to +125 °C temperature range. Electrical characteristics tables confirm VOH, VOL, and timing parameters are guaranteed at VCC = 2.2 V, making it suitable for low-voltage automotive domains such as body control modules.

Is the Byte Power-Down feature dependent on chip enable status?

No. The Byte Power-Down feature activates independently of CE1/CE2 states: when both BHE and BLE are deasserted (high), the device enters ISB2 standby mode regardless of whether CE1 is low or CE2 is high. This behavior is explicitly documented in the Functional Description section and enables ultra-low power retention even during partial system wakefulness.