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Infineon Technologies CY62147G30-45BVXI

Part No.:
CY62147G30-45BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62147G30-45BVXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,458

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Product details

Overview

CY62147G30-45BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16-bit, operating at 45 ns access time across 2.2 V–3.6 V supply range. It features TTL-compatible I/Os, ERR output for error indication, and dual chip enable (CE1/CE2) logic. Used in industrial control modules requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY62147G30-45BVXI datasheet, CY62147G30-45BVXI pinout, CY62147G30-45BVXI application, or CY62147G30-45BVXI equivalent, key selection criteria include ECC-enabled memory integrity, ultra-low standby current (≤8.7 µA), 45 ns timing at 3.0 V, dual CE interface compatibility, and VFBGA-48 packaging for space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous, byte-selectable architecture with dedicated BHE/ BLE controls enabling independent upper- and lower-byte writes. Its ECC engine performs real-time single-bit correction without automatic write-back, and asserts ERR high during correction events - confirmed by truth table and logic block diagram on pages 2 and 16 of Rev. *K datasheet.

The device supports three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); this variant is rated for 2.2–3.6 V operation at 45 ns. Standby power is minimized via Byte Power Down mode: when both BHE and BLE are deasserted, the device enters low-power state regardless of CE states.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K words × 16-bit) - provides 512 KB of word-accessible RAM for firmware buffers or real-time data logging.
Access Time 45 ns at VCC = 3.0 V - enables direct interfacing with microcontrollers running at ≤22.2 MHz without wait states.
Supply Voltage Range 2.2 V to 3.6 V - compatible with modern 3.3 V logic families and mixed-voltage SoC interfaces.
Standby Current Max 8.7 µA - ensures battery-backed operation for >10 years in low-duty-cycle industrial sensors.
ECC Function Single-bit error correction with ERR output assertion - delivers FIT rate <0.1 FIT/Mb per AN88889, critical for safety-critical storage.
Package 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) - 6 mm × 8 mm footprint with 0.5 mm pitch for high-density PCB layouts.
Operating Temperature –40 °C to +85 °C (Industrial grade) - validated for deployment in factory automation and outdoor telemetry units.

Pinout & Package

Package: 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch), RoHS-compliant, moisture-sensitive level 3 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row decoding, A0–A11 for column selection.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; supports byte-level access via BHE/BLE - essential for 8-bit peripheral coexistence.
CE1, CE2 Dual Chip Enable Inputs Active-Low CE1 and Active-High CE2 required simultaneously for device selection - enables hierarchical memory mapping in multi-SRAM systems.
WE Write Enable Input Active-Low control signal initiating write cycle; synchronized with address and data setup/hold timing per AC specs.
OE Output Enable Input Active-Low control enabling read data onto I/O lines; HI-Z state maintained when deasserted or device deselected.
BHE, BLE Byte High/Low Enable Inputs Control write/read access to upper (I/O8–I/O15) or lower (I/O0–I/O7) byte - enables 8-bit microcontroller compatibility without glue logic.
ERR Error Indication Output Open-drain output asserted HIGH during single-bit error detection/correction - directly interfaces with interrupt controllers or status LEDs.
VCC, VSS Power Supply Pins Separate VCC (ball E1) and VSS (balls D1, F1, G1, H1) connections minimize switching noise and improve signal integrity.

Key Features

Feature Design Value
Embedded ECC with ERR output Real-time single-bit correction with visible error event signaling - eliminates need for external error-handling logic in mission-critical firmware storage.
Byte Power Down mode Automatic transition to ultra-low-power state when BHE and BLE are both inactive - reduces system standby power without software intervention.
TTL-compatible I/O levels VIH/VIL thresholds match standard 3.3 V logic families - enables direct connection to ARM Cortex-M or RISC-V MCU GPIOs without level shifters.
Multi-voltage support Validated operation across 2.2–3.6 V - accommodates voltage droop in battery-powered systems while maintaining 45 ns timing.
Industrial temperature range –40 °C to +85 °C operation with guaranteed parameters - suitable for uncontrolled environments like motor drives and PLC backplanes.

Applications

Industrial PLC Data Buffer Medical Diagnostic Imaging Cache

Use Scenario: Storing real-time sensor fusion data and motion control command history in programmable logic controllers.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC ensuring data integrity across extended thermal cycles and EMI exposure.

Use Value: Prevents silent data corruption in control loop variables, avoiding catastrophic actuator misbehavior due to undetected memory errors.

Use Scenario: Caching raw pixel frames during ultrasound or X-ray image acquisition before compression and transmission.

IC Role / Device Role / Timing Role: Low-latency, byte-accessible memory with deterministic 45 ns read/write timing for burst-mode frame capture.

Use Value: Enables lossless frame buffering at 30+ fps using dual CE and BHE/BLE for interleaved channel access without CPU overhead.

Railway Signaling Event Log Avionics Health Monitor Memory

Use Scenario: Recording timestamped fault events and diagnostic snapshots in train-borne signaling computers.

IC Role / Device Role / Timing Role: Nonvolatile-retention-capable SRAM (1.0 V data retention) backed by supercapacitor, with ECC for long-term log integrity.

Use Value: Guarantees tamper-proof audit trail over 15+ year service life, meeting EN 50126/50128 SIL-3 requirements.

Use Scenario: Storing flight-critical health metrics (voltage, temperature, vibration) in airborne maintenance recorders.

IC Role / Device Role / Timing Role: Radiation-tolerant memory with <0.1 FIT/Mb SER rate, deployed in unshielded avionics bays.

Use Value: Reduces mean time between failures (MTBF) for memory subsystem by 3× versus non-ECC alternatives, per DO-254 compliance testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV25616EDBLL-10MLI No embedded ECC; requires external error-checking logic; 10 ns faster (10 ns access), but higher ICC (35 mA typical) Lacks hardware-level error correction - unsuitable where FIT rate or certification mandates ECC Select only if speed priority outweighs reliability requirements and external ECC implementation is acceptable
ON Semiconductor NVSRAM N25S80-45G1F Nonvolatile SRAM with integrated EEPROM backup; no ECC; 45 ns access, but 10× higher standby current (80 µA) Provides data retention after power loss, but no error correction - trades integrity for persistence Choose when power-fail resilience is mandatory and ECC is handled at firmware layer

Compared with IS61WV25616EDBLL-10MLI and N25S80-45G1F, CY62147G30-45BVXI uniquely combines hardware ECC, sub-10 µA standby, and industrial-grade VFBGA packaging - making it optimal for certified embedded systems where memory reliability cannot be delegated to software.

Availability

CY62147G30-45BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and railway signaling equipment requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.

Supply support for CY62147G30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial longevity.

CY62147G30-45BVXI belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-integrity memory in space- and energy-constrained embedded systems where ECC assurance is non-negotiable.

FAQ

Does CY62147G30-45BVXI support automatic error write-back after correction?

No. As explicitly stated in Note 1 of the datasheet (Rev. *K, page 1), this device does not support automatic write-back on error detection. The corrected data remains internal to the ECC decoder and is presented on I/O lines during the read cycle, but the original corrupted bit location is not rewritten in memory.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that asserts HIGH during detection and correction of a single-bit error in the accessed memory location. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and can drive interrupt inputs of microcontrollers or status LEDs without additional buffering.

Can CY62147G30-45BVXI operate reliably at 1.8 V?

No. This specific variant (CY62147G30-45BVXI) is rated for 2.2 V–3.6 V operation only. For 1.65 V–2.2 V operation, the CY62147G18-55BVXI variant must be used - mixing voltage ranges risks timing violations and increased standby current beyond specification.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. Per the "Pb-free" designation in the datasheet title and Package Diagrams section (page 19), the VFBGA package uses lead-free solder balls and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 requirements.

CY62147G30-45BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62147G30-45BVXI FAQ

1.How can I place an order for CY62147G30-45BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147G30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147G30-45BVXI reliable?

The price and inventory of CY62147G30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G30-45BVXI is usually 5 days.

3.What payment methods are accepted for CY62147G30-45BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G30-45BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147G30-45BVXI?

CY62147G30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147G30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147G30-45BVXI?

For technical support, including CY62147G30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G30-45BVXI requirements.

6.How does Aetrix verify that CY62147G30-45BVXI is sourced from the original manufacturer or authorized distributors?

All CY62147G30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G30-45BVXI meets industry standards.

7.What is the process for return or replacement of CY62147G30-45BVXI?

All CY62147G30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G30-45BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147G30-45BVXI part is unused and in its original packaging.

Return procedure for CY62147G30-45BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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