Infineon Technologies CY62147G30-45BVXIT
- Part No.:
- CY62147G30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147G30-45BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,506
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Product details
Overview
CY62147G30-45BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2 V–3.6 V supply range. It features TTL-compatible I/Os, ERR pin for real-time ECC event indication, and ultra-low standby current (max 8.7 µA). Used in industrial control modules requiring data integrity under extended temperature cycling.
For engineers reviewing the CY62147G30-45BVXIT datasheet, CY62147G30-45BVXIT pinout, CY62147G30-45BVXIT application, or CY62147G30-45BVXIT equivalent, key selection criteria include ECC-enabled reliability, dual-chip-enable support for memory banking, voltage-flexible operation (2.2–3.6 V), and VFBGA-48 packaging for high-density PCB layouts.
Technical Context
This SRAM integrates dedicated ECC encoder/decoder logic within the memory array path, enabling on-the-fly single-bit error detection and correction during read cycles without external logic. The ERR output asserts HIGH only when a correctable error is found and corrected - no automatic write-back occurs.
It supports byte-level power-down via simultaneous deassertion of BHE and BLE, forcing immediate transition to standby mode regardless of CE state. Dual chip enable (CE1/CE2) logic enables independent bank selection in multi-SRAM systems, while 1.0-V data retention allows low-power hold modes during brown-out conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16-bit); supports 16-bit parallel data bus interface |
| Access time | 45 ns at VCC = 2.2–3.6 V; defines maximum clock rate for synchronous read/write cycles |
| Supply voltage | 2.2 V–3.6 V; enables direct interfacing with 3.3-V microcontrollers and FPGAs |
| Standby current | Max 8.7 µA at TA = 85 °C; critical for battery-backed industrial logging applications |
| ECC capability | Single-bit error correction per 16-bit word; reduces uncorrectable failure-in-time (FIT) to <0.1 FIT/Mb |
| Package | 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA); 6 mm × 8 mm footprint, 0.5-mm pitch |
| Operating temp | –40 °C to +85 °C (Industrial grade); validated for thermal cycling in motor drive controllers |
Pinout & Package
Package: 48-ball VFBGA (6 mm × 8 mm, 0.5-mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row decoding |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface; supports byte-wide reads/writes via BHE/BLE control |
| CE1, CE2 | Dual chip enable inputs | CE1 LOW + CE2 HIGH enables device; supports memory banking and interleaved access schemes |
| WE | Write enable | Active-LOW signal initiating write cycle; latches data on rising edge of WE |
| OE | Output enable | Active-LOW control for read data output; places I/Os in HI-Z when deasserted |
| BHE, BLE | Byte high/low enable | Control upper/lower byte writes and reads; simultaneous LOW triggers byte power-down mode |
| ERR | Error indication output | Open-drain HIGH pulse indicates successful single-bit correction during last read access |
| VCC, VSS | Power supply pins | VCC (2.2–3.6 V) and two VSS pins provide low-impedance return paths for noise-sensitive SRAM core |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | On-die hardware correction eliminates need for external ECC logic or software overhead in safety-critical firmware |
| Byte power-down mode | Automatic entry into sub-µA standby when BHE and BLE are both inactive - independent of CE state |
| Voltage-flexible operation | Single part supports 2.2–3.6 V range, simplifying design across 2.5-V and 3.3-V system domains |
| TTL-compatible I/Os | Direct interface with legacy microcontrollers and ASICs without level-shifting circuitry |
| Industrial temperature range | Validated operation from –40 °C to +85 °C ensures reliability in factory automation and outdoor metering |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Logger |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controller backplanes with periodic flash backup. IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC protection against cosmic-ray-induced bit flips during long-term data accumulation. Use Value: Prevents silent data corruption in mission-critical control sequences; ERR pin enables firmware-triggered diagnostic logging upon correction event. |
Use Scenario: Temporary storage of ECG waveform samples prior to compression and wireless transmission in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-power, fast-access memory holding raw analog-to-digital conversion results before processing. Use Value: 8.7 µA max standby current extends battery life; 45 ns access enables real-time sampling at ≥22 MHz effective throughput. |
| Avionics Flight Data Recorder Cache | Railway Signaling Controller RAM |
|
Use Scenario: Intermediate storage of flight parameter snapshots between inertial measurement unit (IMU) bursts and non-volatile write cycles. IC Role / Device Role / Timing Role: ECC-protected volatile cache ensuring integrity of time-stamped telemetry during vibration and EMI exposure. Use Value: SER FIT <0.1 FIT/Mb meets DO-254 DAL-B requirements for airborne data recording subsystems. |
Use Scenario: Storing interlocking logic state tables and route command histories in wayside signaling cabinets exposed to wide ambient swings. IC Role / Device Role / Timing Role: Industrial-grade SRAM maintaining deterministic read/write latency across –40 °C to +85 °C without derating. Use Value: Dual CE support enables hot-swappable memory bank isolation; VFBGA package resists mechanical shock in rail-mounted enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No integrated ECC; requires external error-handling logic or software correction | Suitable for cost-sensitive designs where FIT rate is not safety-critical | Select if ECC is implemented at system level and lower BOM cost is prioritized over guaranteed on-die correction |
| AS6C4008-55ZIN | 4-Mbit × 8-bit organization; no ERR pin; 55 ns speed only; no byte power-down feature | Limited to 8-bit bus systems; lacks ECC and low-power byte control | Choose only for legacy 8-bit microcontroller interfaces where ECC is unnecessary and timing margin >10 ns exists |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147G30-45BVXIT uniquely delivers on-die ECC with ERR signaling, 45 ns speed at 3.3 V, and autonomous byte power-down - making it the only option meeting functional safety and ultra-low-power co-design requirements in industrial edge nodes.
Availability
CY62147G30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, avionics recorders, and railway signaling controllers requiring stable component supply across extended product lifecycles.
Supply support for CY62147G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.
CY62147G30-45BVXIT belongs to the MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-power, high-reliability embedded systems where data integrity and energy efficiency are jointly constrained.
FAQ
Does CY62147G30-45BVXIT support automatic error write-back after ECC correction?
No. The device performs single-bit error correction during read cycles but does not automatically write the corrected data back to the memory array. Firmware must explicitly initiate a write cycle if persistent correction is required. This behavior is documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the ERR pin, and how is it electrically driven?
The ERR pin is an open-drain output that asserts HIGH for one clock cycle whenever a single-bit error is detected and corrected during a read access. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and is only present on "E"-suffix variants like this part. Its timing aligns with the OE-controlled read window, as shown in Figure 16 of the datasheet.
Can CY62147G30-45BVXIT operate at 1.8 V?
No. This variant (G30 suffix) is rated for 2.2 V–3.6 V only. The 1.65 V–2.2 V range applies only to CY62147G18 variants. Attempting operation below 2.2 V may result in timing violations, increased ICC, or ECC failure - per Table 1 in the datasheet's Product Portfolio section.
Is the VFBGA-48 package of CY62147G30-45BVXIT compatible with standard reflow profiles?
Yes. The package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles with peak temperature ≤260 °C. Board layout must observe 0.5-mm ball pitch, 0.3-mm solder mask defined pads, and thermal relief on VCC/VSS balls per Infineon's package drawing 00-80049.
CY62147G30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147G30-45BVXIT FAQ
1.How can I place an order for CY62147G30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147G30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147G30-45BVXIT reliable?
The price and inventory of CY62147G30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147G30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147G30-45BVXIT?
CY62147G30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147G30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147G30-45BVXIT?
For technical support, including CY62147G30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G30-45BVXIT requirements.
6.How does Aetrix verify that CY62147G30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147G30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147G30-45BVXIT?
All CY62147G30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147G30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62147G30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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