Infineon Technologies CY62147G30-45ZSXA

Overview

CY62147G30-45ZSXA from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), 45 ns access time, 2.2–3.6 V supply range, and -40 °C to +85 °C operation. It supports byte-level write control via BHE/ BLE, TTL-compatible I/Os, and ultra-low 3.5 µA typical standby current-deployed in engine control units and ADAS domain controllers requiring ECC-protected memory.

For engineers reviewing the CY62147G30-45ZSXA datasheet, CY62147G30-45ZSXA pinout, CY62147G30-45ZSXA application, or CY62147G30-45ZSXA equivalent, key selection criteria include ECC implementation method, dual vs. single chip enable configuration, VFBGA vs. TSOP II package compatibility, and automotive-A temperature compliance for safety-critical ECUs.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic within the memory array path to detect and correct single-bit errors on read operations without external logic. The device implements a 16-bit bidirectional data bus (I/O0–I/O15), 18-bit address bus (A0–A17), and separate byte-enable controls (BHE/BLE) enabling independent upper/lower byte writes.

It features automatic power-down when both BHE and BLE are deasserted-regardless of CE state-reducing standby current to 3.5 µA. The logic block diagram confirms ECC operates inline with sense amplifiers and column decoders, not as a post-read software layer.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, JEDEC MO-220 compliant, thermal resistance θJA = 31.17 °C/W (4-layer board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV25616EDBLL-10MLI and MT48LC4M16A2P-6A:G, CY62147G30-45ZSXA delivers deterministic ECC correction in a drop-in SRAM interface, eliminating refresh overhead and external logic-critical for ISO 26262-compliant automotive control units.

Availability

CY62147G30-45ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, body control modules, and infotainment head units requiring stable component supply across automotive production lifecycles.

Supply support for CY62147G30-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 qualification infrastructure.

CY62147G belongs to the MoBL® Automotive SRAM product line, engineered specifically for functional safety-critical automotive electronics requiring ECC, extended temperature operation, and long-term supply stability.

FAQ

Does CY62147G30-45ZSXA support automatic error correction during read operations?

Yes. The device performs single-bit error correction inline during every read cycle using dedicated hardware ECC logic. Detected errors are corrected before data reaches the I/O pins. However, it does not perform automatic write-back to memory after correction-corrupted bits remain uncorrected in the array until rewritten.

What is the function of the Byte Power Down feature?

When both BHE and BLE are deasserted (HIGH), the device automatically enters ultra-low-power standby mode (3.5 µA typical), regardless of CE state. This enables precise power gating of unused memory sections in multi-threaded automotive firmware without requiring external power switches or complex sequencing.

Is CY62147G30-45ZSXA pin-compatible with CY621472G30 variants?

No. CY62147G30 uses single CE (pin 39 = CE), while CY621472G30 uses dual CE (pins 39 = CE1, 29 = CE2). The pinouts differ in TSOP II packages; VFBGA pinouts are identical except for CE/CE1/CE2 assignment. Board redesign is required for substitution.

Can this SRAM operate reliably during automotive cold-crank conditions?

Yes. With 2.2 V minimum operating voltage and 1.0 V data retention capability, it sustains memory contents and resumes operation as VCC recovers from cold-crank dips (down to ~6 V battery). Its -40 °C to +85 °C rating and AEC-Q100 qualification confirm robustness under these transient conditions.