Infineon Technologies CY62147G30-45ZSXAT
- Part No.:
- CY62147G30-45ZSXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147G30-45ZSXAT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:1,000
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Product details
Overview
CY62147G30-45ZSXAT from Cypress Semiconductor is a 4-Mbit (256K × 16) automotive-grade MoBL® SRAM with embedded single-bit error-correcting code (ECC), 45 ns access time, 2.2–3.6 V supply range, and -40 °C to +85 °C operation. It supports byte-level write control via BHE/ BLE, TTL-compatible I/Os, and ultra-low standby current (3.5 µA typical) for safety-critical memory buffering in ADAS controllers.
For engineers reviewing the CY62147G30-45ZSXAT datasheet, CY62147G30-45ZSXAT pinout, CY62147G30-45ZSXAT application, or CY62147G30-45ZSXAT equivalent, key selection criteria include ECC-enabled data integrity, automotive-A temperature compliance, VFBGA-48 packaging, byte power-down capability, and dual-chip-enable compatibility with legacy memory interfaces.
Technical Context
This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder logic integrated into the memory array path, correcting single-bit errors on read without automatic write-back. The device uses separate row/column decoders and sense amplifiers optimized for low-voltage operation across its full 2.2–3.6 V VCC range.
It supports two chip enable configurations: single CE (CY62147G) and dual CE1/CE2 (CY621472G); this part uses the single CE variant. Byte enable logic (BHE/BLE) gates write operations to upper/lower 8-bit lanes independently, enabling efficient 8-bit peripheral interfacing while maintaining full 16-bit bandwidth when needed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16-bit), enabling compact storage of firmware tables or sensor buffers in space-constrained ECUs. |
| Access Time | 45 ns max at VCC = 2.2–3.6 V and TA = –40 °C to +85 °C, meeting real-time latency requirements for CAN/FlexRay message queuing. |
| Supply Voltage | 2.2 V to 3.6 V, compatible with modern automotive 3.3 V domains and tolerant of battery voltage sag during cold cranking. |
| Standby Current | 3.5 µA typical, reducing quiescent power in always-on modules such as telematics wake-up logic. |
| ECC Function | Embedded single-bit error correction (SER FIT < 0.1 FIT/Mb), providing ASIL-B-aligned data integrity without external logic. |
| Data Retention | 1.0 V minimum retention voltage, allowing safe hold mode during deep sleep with reduced rail voltage. |
| Package | 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), supporting high-density PCB layouts with thermal resistance θJA = 31.17 °C/W. |
Pinout & Package
48-ball VFBGA package (ball pitch: 0.5 mm, body size: 6.0 mm × 8.0 mm × 0.8 mm), RoHS-compliant, with exposed thermal pad for enhanced heat dissipation in under-hood environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CE | Chip Enable | Active-Low global select; deassertion places all I/Os in HI-Z and triggers automatic standby when combined with disabled BHE/BLE. |
| WE | Write Enable | Active-Low signal controlling write cycles; must be asserted with valid address and data to initiate memory store. |
| OE | Output Enable | Active-Low control for read data output; independent of CE, enabling multiplexed bus sharing. |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write gating: BHE enables I/O8–I/O15, BLE enables I/O0–I/O7 - critical for mixed-width peripheral interfacing. |
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row selection, A0–A11 for column decoding. |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit TTL-compatible I/O lines; tri-stated when CE HIGH or OE/BHE/BLE inactive, minimizing bus contention. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | On-die single-bit error correction with SER FIT < 0.1 FIT/Mb - eliminates need for external ECC logic in ASIL-B systems. |
| Byte Power-down | Automatic transition to standby mode when both BHE and BLE are deasserted, regardless of CE state - reduces leakage in partial-access scenarios. |
| Wide VCC Range | 2.2–3.6 V operation accommodates 3.3 V nominal rails and tolerates ±10% variation without regulation overhead. |
| TTL-Compatible I/O | VIL ≤ 0.6 V / VIH ≥ 2.0 V at VCC = 2.2 V ensures interoperability with legacy microcontrollers and FPGAs without level-shifting. |
| Automotive Qualification | AEC-Q100 Grade 2 (–40 °C to +105 °C) and extended Automotive-A grade (–40 °C to +85 °C) per datasheet specification. |
Applications
| Radar Signal Processing Buffer | Instrument Cluster Graphics Framestore |
|---|---|
Use Scenario: Stores intermediate FFT results and Doppler shift buffers in 77 GHz automotive radar ECU during continuous waveform acquisition. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory interfaced directly to DSP core via 16-bit parallel bus with 45 ns timing closure. Use Value: Prevents single-event upsets from corrupting range/velocity calculations; byte-enable support allows efficient 8-bit DMA transfers from ADC front-end. | Use Scenario: Holds rendered GUI frame buffers for TFT display in digital instrument clusters with variable refresh rates. IC Role / Device Role / Timing Role: Low-power, pin-compatible SRAM replacing older non-ECC parts to meet ISO 26262 ASIL-B diagnostic coverage targets. Use Value: 3.5 µA standby current extends battery backup duration during ignition-off; 1.0 V retention enables graceful shutdown during brownout events. |
| ADAS Domain Controller Log Memory | Telematics Control Unit Event Logger |
Use Scenario: Captures timestamped sensor fusion logs (camera, IMU, wheel speed) for post-crash analysis in Level 2+ ADAS systems. IC Role / Device Role / Timing Role: Non-volatile buffer with ECC protection ensuring log integrity across power cycles and EMI-rich engine bay environments. Use Value: SER FIT < 0.1 FIT/Mb guarantees less than one uncorrectable error per 10⁹ hours of operation - satisfying ASIL-B fault tolerance requirements. | Use Scenario: Stores cellular modem status, GPS position history, and OTA update metadata in always-connected vehicle telematics units. IC Role / Device Role / Timing Role: Automotive-A qualified SRAM operating at 3.3 V with byte-write capability for efficient small-packet logging over UART/SPI bridges. Use Value: Dual CE option (via CY621472G variant) allows seamless integration into existing multi-SRAM memory maps without redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error detection logic; 10 ns faster (10 ns access), but higher ICC (30 mA typical) | Suitable for non-safety-critical industrial control where ECC is implemented in software or FPGA | Select only if system-level ECC is already present and lower latency outweighs ASIL-B compliance needs |
| MT48LC16M16A2P-6A:G | SDRAM architecture (not SRAM); requires refresh controller; no ECC; 3.3 V only; 143 MHz clocked interface | Used in high-bandwidth infotainment SoC memory subsystems where burst access dominates | Choose only when migrating to DDR-like throughput and accepting complexity of refresh management and command protocol |
Compared with IS61WV25616EDBLL-10MLI and MT48LC16M16A2P-6A:G, CY62147G30-45ZSXAT uniquely delivers integrated ECC, automotive temperature range, and zero-refresh operation - making it the only drop-in solution for ASIL-B memory subsystems requiring deterministic latency and hardware-level error resilience.
Availability
CY62147G30-45ZSXAT is available at Aetrix Electronics and suitable for radar signal processing, instrument cluster graphics framestores, and ADAS domain controller log memory requiring stable component supply across automotive production lifecycles.
Supply support for CY62147G30-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with focus on functional safety and long-term supply stability.
CY62147G belongs to the MoBL® Automotive SRAM product line, engineered specifically for ASIL-B compliant memory buffering in safety-critical ECUs where ECC, low power, and extended temperature operation are mandatory.
FAQ
Does CY62147G30-45ZSXAT support automatic error correction during read operations?
Yes - the device performs real-time single-bit error correction on every read access using on-die ECC logic. Detected errors are corrected before data reaches the I/O pins, and no external intervention or write-back is required. However, it does not support automatic write-back on error detection per datasheet Note 1.
What is the maximum junction temperature for continuous operation in automotive under-hood environments?
The device is rated for ambient temperatures from –40 °C to +85 °C (Automotive-A grade). With θJA = 31.17 °C/W in VFBGA package and typical power dissipation of 15 mA at 45 ns, junction temperature remains within safe limits (<125 °C) even at 85 °C ambient under worst-case load, assuming standard four-layer PCB layout.
Can CY62147G30-45ZSXAT be used with a 2.5 V supply rail?
Yes - the specified VCC range is 2.2 V to 3.6 V, fully covering 2.5 V operation. All DC and AC parameters, including 45 ns access time and 3.5 µA standby current, are guaranteed across this range per the datasheet's Automotive-A characterization.
Is the 48-ball VFBGA package lead-free and RoHS-compliant?
Yes - the "Z" in the part number suffix denotes Pb-free (lead-free) construction, and the device complies with RoHS Directive 2011/65/EU. The package uses matte tin surface finish on solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements.
CY62147G30-45ZSXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147G30-45ZSXAT FAQ
1.How can I place an order for CY62147G30-45ZSXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147G30-45ZSXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147G30-45ZSXAT reliable?
The price and inventory of CY62147G30-45ZSXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G30-45ZSXAT is usually 5 days.
3.What payment methods are accepted for CY62147G30-45ZSXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G30-45ZSXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147G30-45ZSXAT?
CY62147G30-45ZSXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147G30-45ZSXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147G30-45ZSXAT?
For technical support, including CY62147G30-45ZSXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G30-45ZSXAT requirements.
6.How does Aetrix verify that CY62147G30-45ZSXAT is sourced from the original manufacturer or authorized distributors?
All CY62147G30-45ZSXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G30-45ZSXAT meets industry standards.
7.What is the process for return or replacement of CY62147G30-45ZSXAT?
All CY62147G30-45ZSXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G30-45ZSXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147G30-45ZSXAT part is unused and in its original packaging.
Return procedure for CY62147G30-45ZSXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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