Infineon Technologies CY62147G30-55BVXE

Overview

CY62147G30-55BVXE from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16-bit) MoBL® SRAM with embedded single-bit error-correcting code (ECC), rated for -40 °C to +125 °C (Automotive-E grade), 55 ns access time, 2.2–3.6 V supply, and ultra-low 3.5 µA typical standby current. It supports byte-level write control via BHE/ BLE and operates in TSOP II or VFBGA packages for engine control units and ADAS domain controllers.

For engineers reviewing the CY62147G30-55BVXE datasheet, CY62147G30-55BVXE pinout, CY62147G30-55BVXE application, or CY62147G30-55BVXE equivalent, key selection criteria include ECC-enabled data integrity in safety-critical memory buffers, dual-chip-enable compatibility for multi-SRAM systems, automotive temperature compliance, and low-power byte power-down behavior under disabled BHE/ BLE.

Technical Context

This SRAM implements a synchronous CMOS architecture with integrated ECC encoding/decoding logic that detects and corrects single-bit errors on read operations without automatic write-back. The memory array uses row/column decoding across A0–A17 address lines and supports full 16-bit I/O (I/O0–I/O15) with independent byte enable control.

It features two chip enable configurations: CY62147G uses single CE, while CY621472G (this part's variant) requires CE1 LOW and CE2 HIGH for access. Byte Power Down activates when both BHE and BLE are deasserted, forcing automatic transition to ISB2 standby mode regardless of CE state - a deterministic low-power state critical for ASIL-B/C subsystems.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, Pb-free, body size 18.4 mm × 10.16 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT48LC16M16A2P-6A:G, CY62147G30-55BVXE uniquely delivers certified automotive operation, on-die ECC, and deterministic low-power states - making it the sole option for ASIL-B memory buffers requiring zero external error-handling logic.

Availability

CY62147G30-55BVXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and body control modules requiring stable component supply across extended automotive lifecycles.

Supply support for CY62147G30-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply stability.

CY62147G/CY621472G belongs to the MoBL® Automotive SRAM product line, engineered specifically for ASIL-B/C memory subsystems requiring ECC, extended temperature operation, and ultra-low standby power in safety-critical ECUs.

FAQ

Does CY62147G30-55BVXE support automatic error correction during write operations?

No. The embedded ECC corrects single-bit errors only during read operations. The device does not perform automatic write-back on error detection, as explicitly stated in the datasheet notes. Error correction is applied transparently to read data before output, but corrupted bits written to memory remain uncorrected unless rewritten with corrected data by the host system.

What is the function of the Byte Power Down feature, and how is it triggered?

Byte Power Down forces the device into ISB2 standby mode (≤35 µA) when both BHE and BLE inputs are deasserted (HIGH), regardless of CE1/CE2 state. This occurs because the internal logic interprets disabled byte enables as a request to halt all I/O activity - enabling hardware-driven power gating without CPU involvement or register writes.

Is CY62147G30-55BVXE pin-compatible with CY62147G30-45BVXE?

Yes - both share identical 44-pin TSOP II pinout and signal definitions. The only difference is access time: 45 ns vs. 55 ns. Timing parameters (tAA, tOEH, tHZ) scale accordingly, but DC characteristics, package, and pin functions are fully compatible, allowing drop-in replacement where timing margin permits.

How does the ECC implementation affect memory bandwidth in real-world use?

ECC adds no latency to read cycles - correction occurs in parallel with data output, so tAA remains 55 ns. However, each 16-bit word includes 6 parity bits internally, reducing usable density to ~3.2 Mbit effective. Bandwidth is unchanged since I/O width and clock rate remain identical; only net storage capacity is impacted by the ECC overhead.