Infineon Technologies CY62147G30-55BVXET

Overview

CY62147G30-55BVXET from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16-bit) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), rated for -40 °C to +125 °C (Automotive-E grade), 55 ns access time, 2.2–3.6 V supply, and ultra-low 3.5 µA typical standby current. It supports byte-level write control via BHE/ BLE and operates in TSOP II or VFBGA packages for engine control units and ADAS domain controllers.

For engineers reviewing the CY62147G30-55BVXET datasheet, CY62147G30-55BVXET pinout, CY62147G30-55BVXET application, or CY62147G30-55BVXET equivalent, key selection criteria include ECC-enabled data integrity in safety-critical memory buffers, dual-chip-enable compatibility for multi-SRAM systems, 55 ns timing at 125 °C, and TSOP II package suitability for high-vibration automotive PCB layouts.

Technical Context

This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder logic integrated into the memory array path, correcting single-bit errors on read without external logic. It uses TTL-compatible I/Os and supports automatic power-down when both BHE and BLE are deasserted - independent of CE state - enabling dynamic power gating in real-time systems.

The device offers two functional variants: CY62147G (single CE) and CY621472G (dual CE1/CE2), with this part being the CY621472G variant per ordering code 'BVXE' indicating dual CE, Automotive-E grade, 55 ns speed, and 44-pin TSOP II package. Address range spans A0–A17 (18 bits), supporting full 256K-word addressing.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II), 0.8 mm pitch, body size 10.16 mm × 18.42 mm, lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT29F4G08ABAEAWP-IT:C, CY62147G30-55BVXET uniquely delivers ECC-protected random-access memory with automotive-E temperature qualification and byte-select power gating - essential for safety-critical, thermally demanding ECU and radar applications where deterministic latency and data integrity are non-negotiable.

Availability

CY62147G30-55BVXET is available at Aetrix Electronics and suitable for engine control units, radar signal processors, ADAS domain controllers, and telematics control units requiring stable component supply across extended automotive lifecycles.

Supply support for CY62147G30-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 validation infrastructure.

CY62147G/CY621472G belongs to the MoBL® (Mobile Binary Logic) Automotive SRAM product line, engineered specifically for zero-defect, ECC-enhanced memory in safety-critical vehicle subsystems operating under extreme thermal and EMI conditions.

FAQ

Does CY62147G30-55BVXET support automatic error correction during write operations?

No. The embedded ECC corrects single-bit errors only during read operations. The device does not perform automatic write-back on error detection, as explicitly stated in the datasheet notes. Error correction is applied transparently to read data paths, but corrupted bits written to memory remain uncorrected unless re-read and rewritten by system firmware.

What is the minimum VCC required to retain data in CY62147G30-55BVXET?

Data retention is guaranteed down to 1.0 V VCC across the full automotive-E temperature range (-40 °C to +125 °C). This allows the device to maintain stored values during brown-out conditions or backup power modes without external capacitors, provided all control inputs are held static.

Can CY62147G30-55BVXET be used in place of a standard 256K × 16 SRAM without modifying PCB layout?

Yes - if the target board uses the 44-pin TSOP II footprint and implements dual CE logic (CE1 active-low, CE2 active-high). Pin compatibility is identical to other CY621472G variants in the same package; however, legacy single-CE designs require CE2 routing and pull-up/pull-down adjustment to meet the dual-enable activation condition.

Is the 3.5 µA standby current specified at maximum temperature?

No. The 3.5 µA value is typical at TA = 25 °C and VCC = 3.0 V. At +125 °C, the maximum ISB2 is specified as 35 µA. Designers must use the 35 µA worst-case figure for thermal margining in under-hood applications where ambient and self-heating combine.