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Infineon Technologies CY62147G30-55ZSXE
- Part No.:
- CY62147G30-55ZSXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147G30-55ZSXE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,152
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Product details
Overview
CY62147G30-55ZSXE from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), rated for -40 °C to +125 °C (Automotive-E grade), 55 ns access time, 2.2–3.6 V supply, and ultra-low 3.5 µA typical standby current. It supports byte-level write control via BHE/ BLE and operates in TSOP II or VFBGA packages for engine control units and ADAS domain controllers.
For engineers reviewing the CY62147G30-55ZSXE datasheet, CY62147G30-55ZSXE pinout, CY62147G30-55ZSXE application, or CY62147G30-55ZSXE equivalent, key selection criteria include ECC-enabled data integrity in safety-critical memory buffers, dual-chip-enable compatibility for multi-SRAM systems, temperature-rated reliability, and low-power byte power-down behavior under inactive BHE/ BLE.
Technical Context
This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder logic integrated into the memory array path, correcting single-bit errors on read without automatic write-back. The device uses TTL-compatible I/Os and supports both single-CE (CY62147G) and dual-CE (CY621472G) configurations - CY62147G30-55ZSXE corresponds to the dual-CE variant per ordering code 'ZSXE' (TSOP II, Automotive-E, 55 ns).
Byte power-down is triggered when both BHE and BLE are deasserted, forcing automatic transition to ISB2 standby mode regardless of CE state. Address decoding covers A0–A17 (18 bits), enabling full 256K-word addressing; I/O0–I/O15 provide true 16-bit bidirectional data paths with independent upper/lower byte enable control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16-bit); supports full 16-bit parallel bus interface without multiplexing |
| Access Time | 55 ns max at VCC = 2.2–3.6 V, TA = –40 °C to +125 °C; defines minimum cycle time for reliable read/write |
| ECC Function | Embedded single-bit error correction (no automatic write-back); reduces uncorrectable error rate to <0.1 FIT/Mb |
| Supply Voltage | 2.2 V to 3.6 V; enables direct interfacing with 2.5 V and 3.3 V microcontrollers and SoCs |
| Standby Current | 3.5 µA typical (ISB2); achieved via byte-enable–driven automatic power-down, critical for always-on ECU modules |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade); qualified per AEC-Q100 Grade 0 requirements |
| Data Retention | 1.0 V minimum retention voltage; allows memory hold during brown-out or deep-sleep MCU states |
Pinout & Package
Package: 44-pin TSOP II (Type II, 400-mil width), RoHS-compliant, lead-free, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| I/O0–I/O7 | Lower Byte Data I/O | Bi-directional 8-bit data path enabled by BLE; isolated from upper byte during byte writes |
| I/O8–I/O15 | Upper Byte Data I/O | Bi-directional 8-bit data path enabled by BHE; independently controllable for mixed-width transfers |
| CE1, CE2 | Dual Chip Enable Inputs | Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory mapping |
| WE | Write Enable | Active-Low control signal initiating write cycle; latches data on rising edge of WE when OE is inactive |
| OE | Output Enable | Active-Low signal enabling output drivers; places I/Os in HI-Z when deasserted or device deselected |
| BLE, BHE | Byte Low/High Enable | Active-Low signals gating lower/upper byte writes and reads; assertion triggers automatic standby if both are inactive |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply with separate ground pins; decoupling required per JEDEC TSOP II layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | On-die single-bit error correction logic eliminates need for external ECC controller, reducing PCB area and latency overhead |
| Byte Power-Down | Automatic transition to ISB2 standby when BHE and BLE are both high, enabling dynamic power gating in partial-access workloads |
| Automotive-E Qualification | Rated for continuous operation at +125 °C ambient; meets AEC-Q100 stress test requirements for engine bay and transmission control |
| TTL-Compatible I/O | VIH/VIL thresholds compatible with legacy 3.3 V microcontrollers without level-shifting, simplifying integration with Infineon/AURIX or NXP S32K families |
| Wide Voltage Range | 2.2–3.6 V operation accommodates battery voltage sag (e.g., cold-crank 6 V → 2.5 V) while maintaining functional memory retention |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of sensor fusion buffers and PID control loop variables during active torque management. IC Role / Device Role / Timing Role: High-reliability scratchpad memory with ECC-protected variable storage, accessed at ≤55 ns latency by dual-core lockstep MCUs. Use Value: Prevents silent data corruption in closed-loop actuator commands; 125 °C rating ensures uninterrupted operation near exhaust manifolds. | Use Scenario: Frame buffering for radar preprocessing pipelines where bit errors could cause false object detection. IC Role / Device Role / Timing Role: ECC-protected intermediate memory between radar DSP and host SoC, synchronized to 100 MHz system clock. Use Value: Reduces SER FIT rate to <0.1 FIT/Mb, meeting ISO 26262 ASIL-B diagnostic coverage requirements for sensor data paths. |
| Transmission Control Module (TCM) | Body Control Module (BCM) |
Use Scenario: Storing gear-shift strategy tables and real-time clutch pressure calibration data subject to thermal cycling. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding adaptive shift maps; retains data down to 1.0 V during ignition-off battery drain events. Use Value: Enables seamless relearning after battery disconnect; Automotive-E grade withstands under-hood temperature transients up to 125 °C. | Use Scenario: Logging door/window position history and fault codes across vehicle lifetime with guaranteed data integrity. IC Role / Device Role / Timing Role: Low-power buffer memory for EEPROM wear-leveling algorithms, activated only during CAN message bursts. Use Value: 3.5 µA ISB2 current extends backup battery life beyond 10 years; byte-enable control minimizes active power during infrequent writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error detection logic; 10 ns faster (10 ns access), but higher 12 mA ICC | Lacks built-in error correction; unsuitable for ASIL-B systems without additional validation effort | Select only for non-safety-critical industrial controllers where speed outweighs ECC requirement |
| MT48LC16M16A2P-6A:G | SDRAM, not SRAM; requires refresh circuitry; 3.3 V only; no byte power-down | Higher density (256 Mbit) but introduces timing complexity and refresh-induced latency jitter | Choose only when system already uses SDRAM controller and can tolerate refresh overhead and reduced reliability |
Compared with IS61WV25616EDBLL-10MLI and MT48LC16M16A2P-6A:G, CY62147G30-55ZSXE uniquely delivers automotive-qualified ECC, byte-level power gating, and 125 °C operation in a pin-compatible TSOP II footprint - eliminating external ECC logic while ensuring deterministic latency and fail-safe data integrity.
Availability
CY62147G30-55ZSXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and transmission control modules requiring stable component supply across extended automotive lifecycles.
Supply support for CY62147G30-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 qualification infrastructure.
CY62147G/CY621472G belongs to the MoBL® Automotive SRAM product line, engineered specifically for safety-critical automotive subsystems requiring ECC, extended temperature operation, and ultra-low standby power without external support circuitry.
FAQ
Does CY62147G30-55ZSXE support automatic error correction during write operations?
No. The embedded ECC corrects single-bit errors only on read operations. The device does not perform automatic write-back or error injection correction during writes, as stated in Note 1 of the datasheet. Error detection occurs during read cycles, and corrected data is presented to the bus; no action is taken on the stored memory cell unless explicitly rewritten by the host system.
What is the function of the NC pins in the 44-pin TSOP II package?
The NC (No Connect) pins - located at positions 1, 22, 23, and 44 in the TSOP II pinout - are not bonded to the die and serve no electrical function. Per Note 3 in the datasheet, they are reserved for mechanical compatibility and potential future address expansion in higher-density derivatives, but must remain unconnected in this device's implementation.
Can CY62147G30-55ZSXE operate reliably at 2.2 V supply voltage?
Yes. The device is fully specified over 2.2 V to 3.6 V, including all AC and DC parameters at 2.2 V. The 55 ns access time, 3.5 µA ISB2 standby current, and 1.0 V data retention are all guaranteed across the full voltage range, making it suitable for automotive battery-sag conditions such as cold-cranking events.
How does the dual chip enable (CE1/CE2) interface differ from single CE operation?
CY62147G30-55ZSXE uses dual CE: CE1 is active-low and CE2 is active-high. Both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) to enable the device. This differs from single-CE variants (e.g., CY62147Gxx) that require only CE = LOW. Dual CE enables hierarchical memory decoding in multi-SRAM systems, allowing one controller to gate multiple devices using complementary CE signals.
CY62147G30-55ZSXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147G30-55ZSXE FAQ
1.How can I place an order for CY62147G30-55ZSXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147G30-55ZSXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147G30-55ZSXE reliable?
The price and inventory of CY62147G30-55ZSXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G30-55ZSXE is usually 5 days.
3.What payment methods are accepted for CY62147G30-55ZSXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G30-55ZSXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147G30-55ZSXE?
CY62147G30-55ZSXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147G30-55ZSXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147G30-55ZSXE?
For technical support, including CY62147G30-55ZSXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G30-55ZSXE requirements.
6.How does Aetrix verify that CY62147G30-55ZSXE is sourced from the original manufacturer or authorized distributors?
All CY62147G30-55ZSXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G30-55ZSXE meets industry standards.
7.What is the process for return or replacement of CY62147G30-55ZSXE?
All CY62147G30-55ZSXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G30-55ZSXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147G30-55ZSXE part is unused and in its original packaging.
Return procedure for CY62147G30-55ZSXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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