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Infineon Technologies CY62147G-45ZSXIT

Part No.:
CY62147G-45ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62147G-45ZSXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,892

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Product details

Overview

CY62147G-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® Static RAM with embedded Error-Correcting Code (ECC), configured as 256K words × 16-bit, operating at 45 ns access time, supporting 2.2 V–3.6 V supply, and packaged in a 48-ball VFBGA. It delivers single-bit error detection and correction during read cycles and targets high-reliability industrial memory subsystems in microcontroller-based data loggers.

For engineers reviewing the CY62147G-45ZSXIT datasheet, CY62147G-45ZSXIT pinout, CY62147G-45ZSXIT application, or CY62147G-45ZSXIT equivalent, key selection criteria include ECC-enabled data integrity, ultra-low standby current (≤8.7 µA), dual chip enable support, byte-level write control via BHE/ BLE, and compatibility with 16-bit parallel bus interfaces in space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous CMOS architecture with integrated ECC encoder/decoder logic that operates transparently during read cycles-detecting and correcting single-bit errors without CPU intervention. The device uses separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs to gate writes to upper/lower 8-bit bytes, enabling precise memory mapping in mixed-data-width systems.

It supports three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the -45 variant is specified for 2.2–3.6 V operation at 45 ns max access time. Standby power is minimized via Byte Power Down mode: when both BHE and BLE are deasserted, the device enters low-power state regardless of CE status.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (256K × 16-bit) - provides 512 KB of parallel-accessible RAM for firmware buffers or real-time data storage.
Access Time45 ns - enables direct interface with 22.22 MHz bus clocks without wait states in industrial MCU designs.
VCC Range2.2 V to 3.6 V - compatible with common 3.3 V I/O domains and battery-backed systems with regulated 2.5–3.3 V rails.
Standby CurrentMax 8.7 µA - ensures multi-year operation in always-on sensor nodes powered by coin cells or energy harvesters.
ECC FunctionSingle-bit error correction per 16-bit word - reduces uncorrectable memory failures in mission-critical logging or safety-monitored control loops.
Package48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal and electrical performance superior to TSOP II.
Data Retention1.0 V minimum - allows retention during brown-out events or controlled power-down sequences without external backup.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant, moisture sensitivity level 3.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; A17 is MSB for 16-bit word access.
I/O0–I/O15Bidirectional Data Bus16-bit parallel interface; HI-Z when CE/OE/BLE/BHE inactive, enabling bus sharing.
CE1 / CE2Dual Chip Enable InputsActive-Low CE1 and Active-High CE2 required simultaneously for device selection-enables hierarchical memory decoding in multi-SRAM systems.
WEWrite EnableActive-Low control for write cycles; latches data on rising edge of WE when CE and OE are asserted appropriately.
OEOutput EnableActive-Low signal enabling read data output; independent of CE state for flexible timing control.
BHE / BLEByte Enable ControlsActive-Low signals gating upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes-supports 8-bit peripheral access on 16-bit bus.
VCC / VSSPower / GroundDual VCC pins (balls A16, D1) and multiple VSS balls (C1, E1, G1, H1, etc.) ensure low-impedance supply routing and reduced noise coupling.
NCNo ConnectUnbonded balls (e.g., C2, D2, E2) - must be left floating or grounded per layout guidelines; not usable for expansion.

Key Features

FeatureDesign Value
Embedded ECC EngineHardware-accelerated single-bit error correction per 16-bit word with no software overhead or latency penalty during reads.
Byte Power Down ModeAutomatic transition to standby when both BHE and BLE are inactive-eliminates need for external power management logic.
TTL-Compatible I/OVIH/VIL thresholds meet 3.3 V TTL levels (e.g., VIH ≥ 2.0 V @ 2.7–3.6 V), enabling direct connection to legacy microcontrollers without level shifters.
Multi-Voltage SupportSingle part supports 2.2–3.6 V operation-reduces BOM count across designs using 2.5 V, 3.0 V, or 3.3 V rails.
Low-Leakage DesignInput/output leakage ≤ ±1 µA over temperature-prevents unintended current paths in high-impedance test or sleep modes.

Applications

Industrial Data LoggerMedical Diagnostic Device

Use Scenario: Continuous acquisition of sensor data (ECG, temperature, pressure) with timestamped storage into nonvolatile buffer prior to SD card transfer.

IC Role / Device Role / Timing Role: Primary volatile working memory holding raw samples and metadata; ECC prevents corruption during extended runtime under variable thermal stress.

Use Value: Enables >10-year field reliability without periodic memory scrubbing-critical for Class IIa medical devices requiring IEC 62304 compliance.

Use Scenario: Real-time waveform buffering in portable ultrasound units where frame data must survive brief power interruptions.

IC Role / Device Role / Timing Role: High-speed 16-bit parallel buffer between ADC front-end and FPGA image processor; 45 ns access sustains 22.22 MHz pixel clock rates.

Use Value: 1.0 V data retention allows seamless resume after 100 ms brown-out-meeting IEC 60601-1 clause 9.2.2 for essential equipment.

Railway Signaling ControllerProgrammable Logic Controller (PLC)

Use Scenario: Storing configuration tables and event logs in EN 5012x-certified trackside interlocking units exposed to wide temperature swings.

IC Role / Device Role / Timing Role: ECC-protected RAM for safety-critical state variables and diagnostic history; dual CE supports redundant memory arbitration schemes.

Use Value: SER FIT rate <0.1 FIT/Mb ensures less than one uncorrectable failure per billion hours-supporting SIL-3 system integrity claims.

Use Scenario: Holding ladder logic operands and I/O image tables in DIN-rail mounted PLCs with fanless cooling and 24/7 uptime requirements.

IC Role / Device Role / Timing Role: Low-power SRAM backing up volatile process data during firmware updates; Byte Power Down cuts idle consumption by >95% vs. standard SRAM.

Use Value: 8.7 µA max ISB2 enables thermal design within 55 °C ambient limit without heatsinks-reducing enclosure size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV25616EDBLL-10MLINo embedded ECC; requires external logic or host CPU for error handling; 10 ns faster (10 ns access) but higher ICC (30 mA active).Suitable only where ECC is implemented in software or FPGA fabric; lacks hardware ERR indication.Select only if speed >45 ns is mandatory and ECC can be offloaded externally.
AS6C4008-55ZINNon-ECC 4-Mbit SRAM; 55 ns access; 3.3 V only; TSOP-44 package; no BHE/ BLE or ERR pin.Limited to cost-sensitive, non-safety-critical applications where error resilience is managed at system level.Choose for legacy board refreshes needing pin-compatible drop-in where ECC is unnecessary.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147G-45ZSXIT uniquely integrates hardware ECC with byte-selective power control and multi-voltage support-making it the sole option among these three for industrial systems requiring certified data integrity without firmware overhead.

Availability

CY62147G-45ZSXIT is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic devices, railway signaling controllers, and programmable logic controllers requiring stable component supply across extended product lifecycles.

Supply support for CY62147G-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

CY62147G belongs to Infineon's MoBL® (Mobile Bit-Line) SRAM product line, engineered for ultra-low-power, high-reliability embedded memory in space-constrained industrial and medical systems where data integrity and long-term supply stability are mandatory.

FAQ

Does CY62147G-45ZSXIT support automatic error correction without CPU intervention?

Yes. The device performs single-bit error correction transparently during read operations using on-die ECC logic. No software or external controller action is required-the corrected data appears on I/O lines, and the ERR pin asserts HIGH to signal correction occurred. It does not perform automatic write-back; corrected data remains in the accessed location only for that read cycle.

What is the function of the dual chip enable (CE1/CE2) interface?

CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) to enable the device. This configuration allows hierarchical memory decoding-e.g., using CE2 as a bank select signal driven by higher-order address bits, while CE1 serves as local chip select-improving noise immunity and reducing false enable events in noisy industrial environments.

Can CY62147G-45ZSXIT operate at 1.8 V?

No. The -45ZSXIT suffix denotes the 2.2 V–3.6 V VCC range and 45 ns speed grade. For 1.65–2.2 V operation, the correct variant is CY62147G-55ZSXIT (55 ns). Operating outside its specified voltage range risks timing violations, increased bit errors, or functional failure per datasheet Section 7 (Maximum Ratings).

Is the ERR pin present on CY62147G-45ZSXIT?

No. The "G" suffix (vs. "GE") indicates the absence of the ERR output pin. CY62147G variants implement ECC internally but do not expose error status externally. Only CY62147GE parts include the ERR pin; the -45ZSXIT part number confirms it is a CY62147G variant per Infineon's ordering code definitions (Document 001-92847, page 17).

CY62147G-45ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62147G-45ZSXIT FAQ

1.How can I place an order for CY62147G-45ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62147G-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62147G-45ZSXIT reliable?

The price and inventory of CY62147G-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147G-45ZSXIT is usually 5 days.

3.What payment methods are accepted for CY62147G-45ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147G-45ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62147G-45ZSXIT?

CY62147G-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62147G-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62147G-45ZSXIT?

For technical support, including CY62147G-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147G-45ZSXIT requirements.

6.How does Aetrix verify that CY62147G-45ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY62147G-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147G-45ZSXIT meets industry standards.

7.What is the process for return or replacement of CY62147G-45ZSXIT?

All CY62147G-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147G-45ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62147G-45ZSXIT part is unused and in its original packaging.

Return procedure for CY62147G-45ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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