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Infineon Technologies CY62147GE18-55BVXI
- Part No.:
- CY62147GE18-55BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GE18-55BVXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,944
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Product details
Overview
CY62147GE18-55BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), 256K × 16-bit organization, 55 ns access time, 1.65–2.2 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and is used in mission-critical embedded controllers where data integrity is essential.
For engineers reviewing the CY62147GE18-55BVXI datasheet, CY62147GE18-55BVXI pinout, CY62147GE18-55BVXI application, or CY62147GE18-55BVXI equivalent, key selection criteria include ECC-enabled reliability, ultra-low standby current (≤8.7 µA), dual-chip-enable support, byte-level write control via BHE/ BLE, and VFBGA-48 packaging for space-constrained designs.
Technical Context
This SRAM integrates on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, signaling correction events via the dedicated ERR output (active HIGH). The memory array uses standard CMOS architecture with row/column decoding and sense amplifiers optimized for low-voltage operation across three VCC ranges.
It supports both single and dual chip enable configurations, with CE1/CE2 logic enabling flexible memory mapping in multi-bank systems. Byte power-down mode activates automatically when both BHE and BLE are deasserted-reducing current without requiring external control signals or state machine intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16-bit); enables compact 32 KB data buffers with full word-wide I/O |
| Access time | 55 ns at 1.65–2.2 V; ensures timing compliance in 18 MHz synchronous bus interfaces |
| Standby current | Max 8.7 µA at VCC = 1.8 V; supports battery-backed operation in always-on subsystems |
| ECC capability | Single-bit error detection and correction per 16-bit word; improves FIT rate to <0.1 FIT/Mb |
| Supply voltage | 1.65–2.2 V (primary range); compatible with modern low-power microcontrollers and FPGAs |
| Data retention | 1.0 V minimum; allows memory hold during brown-out or deep-sleep modes without backup power |
| Output drive | TTL-compatible I/Os; simplifies interface to legacy logic and mixed-voltage systems |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row decode |
| I/O0–I/O15 | Bidirectional data lines | 16-bit parallel data path; supports byte-select writes via BHE/BLE |
| CE1, CE2 | Dual chip enable inputs | Active-LOW CE1 and active-HIGH CE2 enable bank-select logic for multi-device memory maps |
| WE | Write enable | Active-LOW signal initiating write cycle; latches data on rising edge of WE when OE is HIGH |
| OE | Output enable | Active-LOW control for read data output; places I/Os in HI-Z when deasserted |
| BHE, BLE | Byte high/low enable | Control upper/lower byte writes; simultaneous deassertion triggers automatic standby entry |
| ERR | Error indication output | Open-drain active-HIGH signal pulsed during single-bit correction; requires external pull-up |
| VCC, VSS | Power supply pins | Separate VCC and VSS balls provide low-inductance power delivery and noise isolation |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | On-die hardware correction eliminates need for external ECC logic or software overhead |
| Byte power-down mode | Automatic transition to ultra-low ISB2 (≤8.7 µA) when BHE/BLE both inactive-no firmware intervention required |
| Multi-voltage support | Single device supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails-reduces BOM count across product variants |
| ERR output pin | Dedicated hardware flag enables system-level error logging and fault-aware firmware responses |
| TTL-compatible I/Os | Eliminates level-shifter requirements in mixed-signal systems interfacing with legacy peripherals |
Applications
| Industrial PLC Data Buffer | Medical Diagnostic Controller Memory |
|---|---|
|
Use Scenario: Storing real-time sensor fusion results and configuration registers in programmable logic controllers operating in electrically noisy factory environments. IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC-protected storage for critical runtime variables and firmware state snapshots. Use Value: Prevents silent data corruption from EMI-induced bit flips-ensuring deterministic control loop behavior and regulatory compliance. |
Use Scenario: Holding patient waveform buffers and calibration coefficients in portable ultrasound and ECG units with battery backup constraints. IC Role / Device Role / Timing Role: Low-power SRAM providing reliable 32 KB scratchpad memory accessible at ≤55 ns during acquisition bursts. Use Value: Enables 1.0 V data retention during sleep modes while maintaining ECC protection-extending battery life without compromising diagnostic accuracy. |
| Aerospace Avionics Health Monitor | Automotive ADAS Sensor Hub |
|
Use Scenario: Capturing flight-critical telemetry logs and fault history in airborne health monitoring units certified to DO-254 Level A. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with hardware ECC used for nonvolatile event logging and watchdog state tracking. Use Value: Reduces soft-error-induced FIT rate to <0.1 FIT/Mb-meeting stringent airborne safety integrity targets. |
Use Scenario: Caching raw camera and radar pre-processing outputs in automotive domain controllers before AI inference acceleration. IC Role / Device Role / Timing Role: High-speed, low-latency memory buffer supporting burst-mode transfers between sensors and SoC DMA engines. Use Value: 55 ns access time and 16-bit bus width minimize pipeline stalls during multi-sensor fusion-improving real-time response in collision avoidance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616BLL-10MLI | No embedded ECC; requires external error handling or software correction | Suitable only where FIT rate is not safety-critical; lacks ERR pin and byte power-down | Select if cost sensitivity outweighs ECC requirement and system can tolerate uncorrected bit errors |
| MT48LC16M16A2P-6A:G | Synchronous SDRAM (not SRAM); requires clock and refresh management; no ECC hardware | Higher density but higher latency and complexity; incompatible with asynchronous bus interfaces | Choose only for bandwidth-intensive applications where external controller supports SDRAM protocol and ECC is implemented in FPGA logic |
Compared with IS61WV25616BLL-10MLI and MT48LC16M16A2P-6A:G, CY62147GE18-55BVXI delivers hardware-accelerated ECC correction, deterministic 55 ns access, and autonomous power management-making it uniquely suited for safety-aware, low-power, asynchronous-memory systems.
Availability
CY62147GE18-55BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical diagnostic controller memory, aerospace avionics health monitoring, and automotive ADAS sensor hub applications requiring stable component supply and long-term lifecycle support.
Supply support for CY62147GE18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.
CY62147GE belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for ultra-low-power, high-reliability embedded systems where data integrity and energy efficiency are co-optimized.
FAQ
Does CY62147GE18-55BVXI support automatic error correction without firmware intervention?
Yes. The device performs single-bit error detection and correction entirely in hardware during each read cycle. When an error is found, the ERR pin asserts HIGH, and corrected data appears on I/O0–I/O15-no CPU or firmware action is required. However, it does not perform automatic write-back of corrected data to memory cells.
What is the function of the ERR pin, and how should it be interfaced?
The ERR pin is an open-drain output that pulses HIGH for one clock cycle (or one access period) whenever a single-bit error is detected and corrected. It must be externally pulled up to VCC. System firmware can monitor this pin to log errors, trigger diagnostics, or initiate fail-safe transitions-enabling proactive reliability management.
Can CY62147GE18-55BVXI operate in dual-chip-enable mode with the VFBGA-48 package?
Yes. The CY62147GE18-55BVXI variant uses the 48-ball VFBGA package with dual chip enable (CE1/CE2) and ERR pin enabled. Pin configuration diagrams in the datasheet confirm CE1 and CE2 are assigned to dedicated balls, and the ERR pin replaces NC in the same footprint as the single-CE version.
How does the byte power-down feature reduce power consumption?
When both BHE and BLE are deasserted (HIGH), the device enters standby mode regardless of CE/CE1/CE2 states-cutting ICC to ≤8.7 µA. This occurs without software polling or external control, making it ideal for intermittent data logging where memory is idle between bursts of activity.
CY62147GE18-55BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GE18-55BVXI FAQ
1.How can I place an order for CY62147GE18-55BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GE18-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GE18-55BVXI reliable?
The price and inventory of CY62147GE18-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GE18-55BVXI is usually 5 days.
3.What payment methods are accepted for CY62147GE18-55BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GE18-55BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GE18-55BVXI?
CY62147GE18-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GE18-55BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GE18-55BVXI?
For technical support, including CY62147GE18-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GE18-55BVXI requirements.
6.How does Aetrix verify that CY62147GE18-55BVXI is sourced from the original manufacturer or authorized distributors?
All CY62147GE18-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GE18-55BVXI meets industry standards.
7.What is the process for return or replacement of CY62147GE18-55BVXI?
All CY62147GE18-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GE18-55BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GE18-55BVXI part is unused and in its original packaging.
Return procedure for CY62147GE18-55BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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