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Infineon Technologies CY62147GE18-55BVXIT
- Part No.:
- CY62147GE18-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GE18-55BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,171
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Product details
Overview
CY62147GE18-55BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 55 ns access time across 1.65–2.2 V supply. It features an ERR output pin for real-time ECC event indication, TTL-compatible I/Os, and ultra-low standby current (3.5 µA typical). Used in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.
For engineers reviewing the CY62147GE18-55BVXIT datasheet, CY62147GE18-55BVXIT pinout, CY62147GE18-55BVXIT application, or CY62147GE18-55BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, byte-enable write control, ERR signal timing, and voltage-range-specific AC/DC specs - all confirmed against Infineon's official Rev. *K datasheet (001-92847).
Technical Context
This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, asserting the ERR pin high upon correction. The memory array uses standard CMOS architecture with row/column decoding and sense amplifiers, supporting both single and dual chip enable configurations.
Byte-level access is controlled via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) inputs, enabling partial writes without full-word overhead. Standby power is reduced via Byte Power Down mode - when both BHE and BLE are deasserted, the device enters low-power state regardless of CE status.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16-bit), enabling compact 512 KB data buffers in space-constrained designs |
| Access Time | 55 ns at 1.65–2.2 V, defining maximum sustained read/write cycle rate of ~18.2 MHz |
| ECC Function | Embedded single-bit error correction with ERR output assertion - no external logic required for basic data integrity |
| Standby Current | 3.5 µA typical / 10 µA max at 1.8 V, supporting battery-backed or energy-harvesting systems |
| Supply Voltage Range | 1.65–2.2 V (optimized for 1.8 V systems), also supports 2.2–3.6 V and 4.5–5.5 V rails |
| Data Retention | 1.0 V minimum retention voltage, allowing graceful shutdown with capacitor hold-up down to 1 V |
| I/O Compatibility | TTL-compatible inputs/outputs, eliminating level-shifter requirements in legacy 5 V or mixed-voltage interfaces |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A17 is MSB |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes |
| CE1 / CE2 | Dual Chip Enable Inputs | Active-low CE1 and active-high CE2 jointly enable device; CE1 HIGH / CE2 LOW disables memory |
| WE | Write Enable | Active-low control for write operations; latches data on falling edge |
| OE | Output Enable | Active-low control for read data output; places I/Os in HI-Z when deasserted |
| BHE / BLE | Byte High/Low Enable | Independent controls for upper/lower byte writes; both disabled triggers Byte Power Down |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit error detection/correction event |
| VCC / VSS | Power / Ground | Separate VCC and VSS balls ensure stable core and I/O rail decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC with ERR output | On-chip single-bit error correction eliminates need for external ECC logic and provides immediate fault visibility |
| Multi-voltage support | Three discrete VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V) allow reuse across 1.8 V, 3.3 V, and 5 V system domains |
| Byte Power Down mode | Automatic transition to ultra-low-power state when BHE and BLE are both inactive - no software or external control needed |
| TTL-compatible I/Os | Direct interfacing with legacy microcontrollers and FPGAs without level translation circuitry |
| 1.0 V data retention | Preserves stored data during brown-out or backup-battery operation down to 1.0 V supply |
Applications
| Industrial PLC Data Buffer | Medical Diagnostic Imaging Cache |
|---|---|
Use Scenario: Real-time logging of sensor inputs and control outputs in programmable logic controllers with extended field lifetime. IC Role / Device Role / Timing Role: Primary non-refreshing data buffer holding runtime variables and alarm history with ECC-protected integrity. Use Value: Prevents silent data corruption in mission-critical control loops where undetected bit flips could cause unsafe actuator behavior. | Use Scenario: Temporary storage of raw image frames during CT/MRI scan acquisition before compression and transfer. IC Role / Device Role / Timing Role: High-speed, low-latency frame cache interfacing directly with FPGA-based image processors. Use Value: Enables deterministic 55 ns read/write timing while maintaining data fidelity across multi-second acquisition bursts. |
| Railway Signaling Event Logger | Avionics Health Monitor Memory |
Use Scenario: Recording train position, speed, and signal status events in EN 5012x-certified signaling equipment deployed in temperature-variable environments. IC Role / Device Role / Timing Role: Radiation-tolerant, long-retention SRAM used for black-box-style event capture with timestamped logs. Use Value: 1.0 V retention and ECC reduce risk of log loss during power interruption or cosmic-ray-induced soft errors. | Use Scenario: Storing real-time sensor telemetry (vibration, temperature, pressure) in flight data monitoring units subject to DO-160 environmental stress. IC Role / Device Role / Timing Role: Low-power, high-reliability scratchpad memory for health diagnostics subsystems with strict SWaP-C constraints. Use Value: 3.5 µA standby current extends battery life in maintenance-free deployments; ERR pin enables automated fault reporting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error handling logic; 10 ns faster (10 ns access), but higher ICC (30 mA typical) | Suitable only where ECC is implemented in host processor or FPGA - adds design complexity and latency | Select only if speed >55 ns is mandatory and host-side ECC is already architected |
| AS6C4008-55ZIN | 4-Mbit × 8-bit organization (not ×16); no ERR pin; no ECC; 55 ns access; 1.8 V only | Limited to byte-oriented systems; lacks hardware error visibility and correction capability | Consider only for cost-sensitive, non-critical buffering where ECC is unnecessary |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE18-55BVXIT uniquely integrates ECC + ERR in a ×16 configuration with multi-voltage support and sub-µA standby - delivering verified data integrity without host overhead or voltage limitation.
Availability
CY62147GE18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway event loggers, and avionics health monitors requiring stable component supply across extended product lifecycles.
Supply support for CY62147GE18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and aerospace heritage.
CY62147GE belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-power, high-reliability embedded systems where data integrity, voltage flexibility, and long-term supply stability are critical.
FAQ
Does CY62147GE18-55BVXIT support automatic error correction without host intervention?
Yes. The device performs single-bit error correction autonomously during read cycles using on-die ECC logic. When a correctable error is detected, it is fixed before data output and the ERR pin is asserted HIGH - no host CPU action or firmware routine is required for correction.
What is the function of the ERR pin, and how is it electrically driven?
The ERR pin is an open-drain output that goes HIGH (pulled up externally) when a single-bit error is detected and corrected during a read access. It remains LOW otherwise. No internal pull-up is provided; a 4.7 kΩ external resistor to VCC is recommended per Infineon's application guidance.
Can CY62147GE18-55BVXIT operate in single chip enable mode?
Yes. The part supports both single CE (pin CE active-low, CE2 not bonded) and dual CE (CE1 active-low + CE2 active-high) configurations. Pinout diagrams in the datasheet confirm dedicated ball assignments for each mode, and the ordering code "CY62147GE" indicates ERR functionality is present regardless of CE option.
Is the 1.0 V data retention specification guaranteed over temperature?
Yes. The 1.0 V data retention is specified over the full industrial temperature range (–40 °C to +85 °C), as confirmed in the "Data Retention Characteristics" section of the datasheet (page 10). This applies with VCC ≥ 1.0 V and all control inputs held static.
CY62147GE18-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GE18-55BVXIT FAQ
1.How can I place an order for CY62147GE18-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GE18-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GE18-55BVXIT reliable?
The price and inventory of CY62147GE18-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GE18-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147GE18-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GE18-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GE18-55BVXIT?
CY62147GE18-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GE18-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GE18-55BVXIT?
For technical support, including CY62147GE18-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GE18-55BVXIT requirements.
6.How does Aetrix verify that CY62147GE18-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147GE18-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GE18-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147GE18-55BVXIT?
All CY62147GE18-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GE18-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GE18-55BVXIT part is unused and in its original packaging.
Return procedure for CY62147GE18-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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