My Inquiry
My Account
Infineon Technologies CY62147GE18-55ZSXI
- Part No.:
- CY62147GE18-55ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147GE18-55ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,469
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62147GE18-55ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configured as 256K × 16-bit, operating at 55 ns access time across 1.65–2.2 V supply, featuring ERR output pin, ultra-low standby current (3.5 µA typical), and TTL-compatible I/Os - deployed in industrial-grade memory subsystems for medical imaging buffers and avionics data loggers.
For engineers reviewing the CY62147GE18-55ZSXI datasheet, CY62147GE18-55ZSXI pinout, CY62147GE18-55ZSXI application, or CY62147GE18-55ZSXI equivalent, key selection criteria include ECC-enabled reliability, dual-voltage support (1.65–2.2 V), 48-ball VFBGA package compatibility, and ERR signal behavior during single-bit correction events.
Technical Context
This SRAM implements a synchronous, byte-selectable CMOS architecture with independent BHE/ BLE controls for upper/lower 8-bit writes and reads, and integrates dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without requiring external logic. The ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed.
It supports three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), but CY62147GE18-55ZSXI is specifically rated for 1.65–2.2 V operation at 55 ns. Its Byte Power Down feature enables automatic transition to standby mode when both BHE and BLE are deasserted - independent of CE state - reducing leakage in partial-access memory systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16-bit) - supports 32 KB of wide-data storage per device, ideal for burst-mode buffering in microcontroller peripherals. |
| Access Time | 55 ns - guarantees deterministic read latency for real-time control loops running at ≤18.18 MHz bus frequency. |
| VCC Range | 1.65 V to 2.2 V - compatible with low-voltage FPGA I/O banks and battery-backed industrial SoCs. |
| Standby Current | 3.5 µA typical / 10 µA max - enables multi-year operation in energy-constrained edge sensor nodes with periodic wake-up. |
| ECC Function | Single-bit error detection and correction per read - reduces uncorrectable error rate to <0.1 FIT/Mb, critical for safety-critical logging. |
| ERR Pin Behavior | Open-drain output asserted HIGH only during correction event - allows direct connection to interrupt controller without level-shifting. |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal pad for improved power dissipation. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; A0–A17 directly map to internal row/column decoders. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; HI-Z when CE/OE/BLE/BHE inactive - eliminates bus contention in shared-memory systems. |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 required simultaneously for access - prevents accidental enable during power sequencing transients. |
| WE | Write Enable | Active-LOW control synchronizing write cycles; combined with BHE/ BLE determines which byte lanes update memory. |
| OE | Output Enable | Active-LOW signal enabling read data onto I/O lines; independent of CE state for flexible timing control. |
| BHE, BLE | Byte Enable Controls | BHE enables I/O8–I/O15 (upper byte); BLE enables I/O0–I/O7 (lower byte); both LOW forces Byte Power Down mode. |
| ERR | Error Indication Output | Open-drain output asserted HIGH only when ECC corrects a single-bit error - requires external pull-up for interrupt signaling. |
| VCC, VSS | Power and Ground | Dual VCC pins (Balls A16, D1) and multiple VSS balls (C1, E1, G1, H2) reduce IR drop and improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | Hardware-accelerated single-bit error correction per read cycle - eliminates need for external ECC logic or software overhead. |
| Byte Power Down Mode | Automatic entry into ultra-low-power standby when BHE and BLE are both deasserted - cuts ICC to 3.5 µA regardless of CE status. |
| Voltage Flexibility | Supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - allows reuse across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V designs. |
| TTL-Compatible I/O | VIH/VIL thresholds meet TTL logic levels at all VCC ranges - ensures interoperability with mixed-voltage microcontrollers and FPGAs. |
| Industrial Temperature Range | Rated for –40 °C to +85 °C ambient - validated for continuous operation in enclosed industrial enclosures without forced cooling. |
Applications
| Medical Imaging Buffer | Avionics Data Logger |
|---|---|
|
Use Scenario: Real-time acquisition of X-ray detector frames with on-the-fly pixel correction before compression. IC Role / Device Role / Timing Role: High-reliability frame buffer storing raw 16-bit sensor data; ECC prevents corrupted image tiles from propagating to diagnostic algorithms. Use Value: Single-bit error correction ensures >99.999% data integrity over 10-year field life, meeting IEC 62304 Class C software requirements. |
Use Scenario: Continuous recording of flight control surface positions, engine parameters, and GPS timestamps in black-box recorders. IC Role / Device Role / Timing Role: Nonvolatile-adjacent SRAM buffer holding last 30 seconds of telemetry prior to flash write - powered by backup coin cell during main power loss. Use Value: 1.0-V data retention allows operation down to 1.0 V VCC, extending buffer lifetime during brownout conditions common in aircraft electrical systems. |
| Programmable Logic Controller (PLC) | Industrial Ethernet Gateway |
|
Use Scenario: Storing ladder logic execution state and I/O scan history in modular PLC backplanes with hot-swap capability. IC Role / Device Role / Timing Role: Dual-port accessible SRAM used for deterministic cyclic data exchange between CPU and fieldbus ASICs via shared memory protocol. Use Value: 55 ns access time meets 1 ms I/O scan cycle budgets; ERR pin triggers diagnostic flag on first detected memory fault, enabling predictive maintenance. |
Use Scenario: Bridging Modbus TCP and PROFINET protocols with packet reassembly and timestamp alignment in edge gateways. IC Role / Device Role / Timing Role: Packet buffer holding fragmented Ethernet frames during protocol translation; ECC protects against cosmic-ray-induced bit flips in unshielded factory environments. Use Value: SER FIT rate <0.1 FIT/Mb satisfies SIL-2 functional safety targets for industrial communication layers without redundant memory. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No integrated ECC; requires external error-checking logic or software layer; 10 ns faster (10 ns access), but higher standby current (25 µA typical). | Lacks hardware-level error correction - unsuitable for safety-critical or long-term unattended logging where silent data corruption must be prevented. | Select only if speed is primary constraint and system-level ECC can be implemented reliably in firmware or companion logic. |
| Micron MT45W8MW16BGX-55 IT:D | DDR2 SDRAM with optional on-die ECC (not enabled by default); requires clocked interface and refresh management; 55 ns latency includes tRCD + tCL. | Not pin-compatible; demands memory controller with DDR2 timing compliance - increases design complexity versus SRAM's simplicity. | Choose only when bandwidth >200 MB/s is required and system already uses DDR2 infrastructure; avoid for deterministic latency-critical use cases. |
Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-55 IT:D, CY62147GE18-55ZSXI delivers verified hardware ECC with zero software overhead, guaranteed 55 ns latency, and lowest standby power in its class - making it optimal for resource-constrained, safety-aware embedded memory applications.
Availability
CY62147GE18-55ZSXI is available at Aetrix Electronics and suitable for medical imaging buffers, avionics data loggers, and industrial PLCs requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality across temperature and voltage variations.
Supply support for CY62147GE18-55ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions - with annual revenue exceeding €14 billion and operations in 35+ countries.
CY62147GE belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, engineered for ultra-low-power, high-reliability memory in portable, battery-operated, and mission-critical industrial systems where data integrity and energy efficiency are co-primary constraints.
FAQ
Does CY62147GE18-55ZSXI support automatic write-back after ECC correction?
No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. Corrected data appears on I/O lines, and the ERR pin signals the event, but the original corrupted word remains unchanged in the array unless explicitly rewritten by the host system.
What is the function of the ERR pin during normal (error-free) operation?
During error-free reads, the ERR pin remains in high-impedance (HI-Z) state. It only drives HIGH (open-drain, requires external pull-up) when a single-bit error is detected and corrected. No pull-down is needed, and the pin does not toggle or pulse - it latches HIGH until the next read access.
Can CY62147GE18-55ZSXI operate at 1.5 V?
No. The absolute minimum VCC is 1.65 V per datasheet specifications. Operation below 1.65 V violates maximum ratings and may result in undefined behavior, including ECC failure, data retention loss, or increased soft-error susceptibility - it is not characterized or guaranteed.
Is the 48-ball VFBGA package of CY62147GE18-55ZSXI compatible with standard reflow profiles?
Yes. The package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and is qualified for standard lead-free reflow profiles (peak temperature 260 °C, 60-second duration above 217 °C). Thermal pad (ball E3) must be soldered to PCB ground plane for optimal thermal performance and signal integrity.
CY62147GE18-55ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147GE18-55ZSXI FAQ
1.How can I place an order for CY62147GE18-55ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GE18-55ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GE18-55ZSXI reliable?
The price and inventory of CY62147GE18-55ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GE18-55ZSXI is usually 5 days.
3.What payment methods are accepted for CY62147GE18-55ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GE18-55ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GE18-55ZSXI?
CY62147GE18-55ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GE18-55ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GE18-55ZSXI?
For technical support, including CY62147GE18-55ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GE18-55ZSXI requirements.
6.How does Aetrix verify that CY62147GE18-55ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62147GE18-55ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GE18-55ZSXI meets industry standards.
7.What is the process for return or replacement of CY62147GE18-55ZSXI?
All CY62147GE18-55ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GE18-55ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GE18-55ZSXI part is unused and in its original packaging.
Return procedure for CY62147GE18-55ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62147GE18-55ZSXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…
