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Infineon Technologies CY62147GE18-55ZSXIT
- Part No.:
- CY62147GE18-55ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147GE18-55ZSXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,497
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Product details
Overview
CY62147GE18-55ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), 256K × 16-bit organization, 55 ns access time, 1.65–2.2 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and targets fault-tolerant microcontroller subsystems requiring data integrity.
For engineers reviewing the CY62147GE18-55ZSXIT datasheet, CY62147GE18-55ZSXIT pinout, CY62147GE18-55ZSXIT application, or CY62147GE18-55ZSXIT equivalent, key selection criteria include ECC-enabled reliability, ultra-low 3.5 µA typical standby current, dual/optional chip enable architecture, byte-level write control via BHE/ BLE, and VFBGA-48 packaging for space-constrained embedded designs.
Technical Context
This SRAM implements a dedicated ECC encoder/decoder block integrated into the memory array path, correcting single-bit errors on read without CPU intervention and asserting ERR high during correction. Its dual-chip-enable logic (CE1 low + CE2 high) enables selective bank isolation in multi-device systems.
The device supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), but CY62147GE18-55ZSXIT is specifically rated for 1.65–2.2 V operation at 55 ns speed. Byte Power Down mode activates automatically when both BHE and BLE are deasserted, forcing immediate transition to standby regardless of CE state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16-bit); supports full-word or byte-aligned data transfers |
| Access time | 55 ns max at VCC = 1.8 V; defines minimum cycle time for reliable read/write in timing-critical control loops |
| Supply voltage | 1.65 V to 2.2 V; compatible with modern low-voltage microcontrollers and FPGAs |
| Standby current | Typical 3.5 µA; enables >1-year battery life in always-on sensor nodes with periodic wake-up |
| ECC capability | Single-bit error correction with ERR output assertion; eliminates need for external error-handling firmware overhead |
| Data retention | 1.0 V minimum; maintains stored data during brown-out or deep-sleep modes without refresh |
| Operating temperature | –40 °C to +85 °C; qualified for industrial automation and automotive body electronics |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row decoding |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1 / CE2 | Dual chip enable inputs | CE1 low + CE2 high enables device; allows hierarchical memory mapping in multi-SRAM systems |
| WE | Write enable | Active-low signal initiating write cycle; synchronized with address and data setup/hold timing |
| OE | Output enable | Active-low control for read data output; decouples memory access from system bus timing |
| BLE / BHE | Byte low/high enable | Independent control of lower/upper byte writes; enables efficient 8-bit peripheral interfacing |
| ERR | Error indication output | Open-drain active-high signal pulsed during single-bit correction; requires external pull-up for system-level fault logging |
| VCC / VSS | Power / ground | Dual VCC pins improve power delivery integrity; multiple VSS balls reduce ground bounce in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Hardware-accelerated single-bit error correction with no CPU cycle penalty or software overhead |
| Byte Power Down mode | Automatic entry into ultra-low-power state when both BHE and BLE are inactive-no control register programming required |
| TTL-compatible I/O | Direct interface with legacy 1.8 V/2.5 V/3.3 V logic families without level-shifting circuitry |
| Multi-voltage support | Single part supports 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails-reduces BOM count across product variants |
| Industrial temperature rating | Guaranteed operation from –40 °C to +85 °C with full electrical specs-suitable for uncontrolled environments |
Applications
| Medical Infusion Pump Controller | Industrial PLC I/O Module |
|---|---|
Use Scenario: Stores calibrated dosage parameters and runtime logs in safety-critical drug delivery systems where bit corruption could cause overdose. IC Role / Device Role / Timing Role: Nonvolatile parameter storage with real-time ECC correction; ERR pin triggers system alert and safe shutdown on detected error. Use Value: Eliminates need for redundant checksum polling or external error-detection ICs-reducing PCB area and firmware complexity. | Use Scenario: Holds configuration data and process state variables in programmable logic controllers deployed in factory-floor cabinets. IC Role / Device Role / Timing Role: High-reliability scratchpad memory accessed by ARM Cortex-M7 core during cyclic scan execution. Use Value: 3.5 µA standby current extends uptime during mains failure; 55 ns access meets deterministic I/O update deadlines. |
| Railway Signaling Interface Unit | Avionics Data Recorder Buffer |
Use Scenario: Buffers train position reports and interlocking commands in EN 5012x-certified signaling hardware exposed to wide thermal swings. IC Role / Device Role / Timing Role: Fault-tolerant working memory with automatic single-bit correction; ERR output feeds watchdog supervisor circuit. Use Value: Meets SIL-3 functional safety requirements for memory integrity without external ECC controller or FPGA logic resources. | Use Scenario: Captures flight sensor telemetry at 10 kHz in black box recorders where radiation-induced soft errors must be mitigated. IC Role / Device Role / Timing Role: High-speed buffer between ADC interface and flash storage; ECC ensures log integrity over 10+ year archival life. Use Value: 1.0 V data retention allows continued memory hold during extended power loss-critical for post-crash forensic recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM-with-ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error-checking logic or software CRC; 10 ns faster (10 ns access), higher ICC (30 mA typical) | Suitable only where ECC is implemented at system level; not drop-in for safety-critical use cases | Select if speed > reliability, and system already handles error detection in firmware or FPGA |
| AS6C4008-55ZIN | 4-Mbit SRAM without ECC; 55 ns access; 2.7–3.6 V only; no ERR pin; 12 µA ISB typical | Lacks hardware error correction-requires redesign of fault-handling architecture | Choose only for cost-sensitive non-safety applications where voltage range matches and ECC is unnecessary |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE18-55ZSXIT uniquely delivers integrated ECC with ERR signaling, ultra-low 3.5 µA standby, and triple-voltage support-making it the sole option for compact, battery-backed, safety-aware embedded systems needing zero-software-error-correction overhead.
Availability
CY62147GE18-55ZSXIT is available at Aetrix Electronics and suitable for medical infusion pump controllers, industrial PLC I/O modules, railway signaling interface units, and avionics data recorder buffers requiring stable component supply across long production lifecycles.
Supply support for CY62147GE18-55ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.
CY62147GE belongs to the MoBL® (Mobile Low-power) SRAM product line, designed specifically for battery-powered and thermally constrained embedded systems demanding high reliability, low static power, and hardware-assisted data integrity.
FAQ
Does CY62147GE18-55ZSXIT support automatic error write-back after correction?
No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data back to the memory cell. Write-back must be handled externally by the host processor if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.
What is the function of the ERR pin, and how should it be interfaced?
The ERR pin is an open-drain output that goes HIGH during detection and correction of a single-bit error in the accessed word. It must be externally pulled up to VCC with a 4.7 kΩ resistor. The pulse width matches the read cycle duration, allowing direct connection to interrupt inputs or status registers in microcontrollers without additional conditioning circuitry.
Can CY62147GE18-55ZSXIT operate at 2.5 V?
No. CY62147GE18-55ZSXIT is specified only for the 1.65–2.2 V VCC range. Operation at 2.5 V falls outside its qualified voltage window and violates the Absolute Maximum Ratings table, risking parametric failure or accelerated wear-out. For 2.2–3.6 V operation, the CY62147GE30 variant must be selected instead.
Is the 48-ball VFBGA package lead-free and RoHS-compliant?
Yes. The "Z" suffix in CY62147GE18-55ZSXIT indicates a lead-free, RoHS-compliant package per Infineon's ordering nomenclature. The VFBGA package uses matte tin surface finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), requiring bake prior to reflow if exposed beyond floor life.
CY62147GE18-55ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147GE18-55ZSXIT FAQ
1.How can I place an order for CY62147GE18-55ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GE18-55ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GE18-55ZSXIT reliable?
The price and inventory of CY62147GE18-55ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GE18-55ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62147GE18-55ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GE18-55ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GE18-55ZSXIT?
CY62147GE18-55ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GE18-55ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GE18-55ZSXIT?
For technical support, including CY62147GE18-55ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GE18-55ZSXIT requirements.
6.How does Aetrix verify that CY62147GE18-55ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62147GE18-55ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GE18-55ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62147GE18-55ZSXIT?
All CY62147GE18-55ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GE18-55ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GE18-55ZSXIT part is unused and in its original packaging.
Return procedure for CY62147GE18-55ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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