Infineon Technologies CY62147GE18-55ZSXIT

Overview

CY62147GE18-55ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), 256K × 16-bit organization, 55 ns access time, 1.65–2.2 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and targets fault-tolerant microcontroller subsystems requiring data integrity.

For engineers reviewing the CY62147GE18-55ZSXIT datasheet, CY62147GE18-55ZSXIT pinout, CY62147GE18-55ZSXIT application, or CY62147GE18-55ZSXIT equivalent, key selection criteria include ECC-enabled reliability, ultra-low 3.5 µA typical standby current, dual/optional chip enable architecture, byte-level write control via BHE/ BLE, and VFBGA-48 packaging for space-constrained embedded designs.

Technical Context

This SRAM implements a dedicated ECC encoder/decoder block integrated into the memory array path, correcting single-bit errors on read without CPU intervention and asserting ERR high during correction. Its dual-chip-enable logic (CE1 low + CE2 high) enables selective bank isolation in multi-device systems.

The device supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), but CY62147GE18-55ZSXIT is specifically rated for 1.65–2.2 V operation at 55 ns speed. Byte Power Down mode activates automatically when both BHE and BLE are deasserted, forcing immediate transition to standby regardless of CE state.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE18-55ZSXIT uniquely delivers integrated ECC with ERR signaling, ultra-low 3.5 µA standby, and triple-voltage support-making it the sole option for compact, battery-backed, safety-aware embedded systems needing zero-software-error-correction overhead.

Availability

CY62147GE18-55ZSXIT is available at Aetrix Electronics and suitable for medical infusion pump controllers, industrial PLC I/O modules, railway signaling interface units, and avionics data recorder buffers requiring stable component supply across long production lifecycles.

Supply support for CY62147GE18-55ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

CY62147GE belongs to the MoBL® (Mobile Low-power) SRAM product line, designed specifically for battery-powered and thermally constrained embedded systems demanding high reliability, low static power, and hardware-assisted data integrity.

FAQ

Does CY62147GE18-55ZSXIT support automatic error write-back after correction?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data back to the memory cell. Write-back must be handled externally by the host processor if persistent correction is required. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the functional description section.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that goes HIGH during detection and correction of a single-bit error in the accessed word. It must be externally pulled up to VCC with a 4.7 kΩ resistor. The pulse width matches the read cycle duration, allowing direct connection to interrupt inputs or status registers in microcontrollers without additional conditioning circuitry.

Can CY62147GE18-55ZSXIT operate at 2.5 V?

No. CY62147GE18-55ZSXIT is specified only for the 1.65–2.2 V VCC range. Operation at 2.5 V falls outside its qualified voltage window and violates the Absolute Maximum Ratings table, risking parametric failure or accelerated wear-out. For 2.2–3.6 V operation, the CY62147GE30 variant must be selected instead.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The "Z" suffix in CY62147GE18-55ZSXIT indicates a lead-free, RoHS-compliant package per Infineon's ordering nomenclature. The VFBGA package uses matte tin surface finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), requiring bake prior to reflow if exposed beyond floor life.