Infineon Technologies CY62147GE30-45BVXIT

Overview

CY62147GE30-45BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16-bit, operating at 45 ns access time across 2.2–3.6 V supply. It features an ERR output pin for real-time ECC event indication, ultra-low standby current (8.7 µA max), and TTL-compatible I/Os. Used in industrial control modules where data integrity and low-power retention are critical.

For engineers reviewing the CY62147GE30-45BVXIT datasheet, CY62147GE30-45BVXIT pinout, CY62147GE30-45BVXIT application, or CY62147GE30-45BVXIT equivalent, key selection criteria include ECC-enabled reliability, dual-voltage support (2.2–3.6 V), 45 ns timing, 48-ball VFBGA package compatibility, and ERR signal behavior during read-cycle correction events.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in real time during read operations, with ERR pin assertion confirming correction without automatic write-back. The memory array uses standard CMOS architecture with row/column decoding and sense amplifiers optimized for low-voltage operation.

It supports both single and dual chip enable configurations, byte-level write control via BHE/BLE, and seamless standby entry when both byte enables are deasserted-enabling dynamic power gating independent of CE state. Address range spans A0–A17 (18 bits), supporting full 256K-word access.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch), RoHS-compliant, moisture-sensitive level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:B, CY62147GE30-45BVXIT uniquely delivers integrated ECC with zero software overhead, sub-10 µA standby, and pin-compatible simplicity-making it optimal for safety-aware, low-power embedded systems without DDR infrastructure.

Availability

CY62147GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, and railway signaling controllers requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.

Supply support for CY62147GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade performance.

CY62147GE belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for low-power, high-reliability embedded systems requiring error-resilient memory in space- and energy-constrained environments.

FAQ

Does CY62147GE30-45BVXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and signals the event via the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Write-back must be implemented externally if persistent correction is required. This design minimizes latency and avoids unintended writes during transient errors.

What is the function of the ERR pin during normal (error-free) operation?

During error-free reads, the ERR pin remains in a high-impedance (HI-Z) state and must be pulled up externally to VCC via a resistor (typically 4.7 kΩ). It only drives HIGH actively when a single-bit error is detected and corrected during a read cycle with OE asserted-providing unambiguous, hardware-level error notification.

Can CY62147GE30-45BVXIT operate across multiple voltage ranges simultaneously?

No. The device operates in one selected VCC range at a time: either 1.65–2.2 V, 2.2–3.6 V, or 4.5–5.5 V. The 2.2–3.6 V range is used by CY62147GE30-45BVXIT per its ordering code suffix "30". Mixing voltages across pins violates absolute maximum ratings and may cause latch-up or parametric failure.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The "VXIT" suffix in CY62147GE30-45BVXIT denotes a lead-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified per JEDEC J-STD-020 moisture sensitivity level 3 and rated for reflow peak temperatures up to 260 °C.