My Inquiry
My Account
Infineon Technologies CY62147GE30-45ZSXI
- Part No.:
- CY62147GE30-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62147GE30-45ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:249
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62147GE30-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2–3.6 V supply. It features an ERR output pin for real-time ECC event indication, TTL-compatible I/Os, and ultra-low standby current (8.7 µA max). Used in industrial control modules requiring data integrity during long-term operation.
For engineers reviewing the CY62147GE30-45ZSXI datasheet, CY62147GE30-45ZSXI pinout, CY62147GE30-45ZSXI application, or CY62147GE30-45ZSXI equivalent, key selection criteria include ECC-enabled reliability, dual-voltage support (2.2–3.6 V), 45 ns timing, 44-pin TSOP II package compatibility, and ERR pin behavior during read-cycle correction events.
Technical Context
This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in accessed memory words without external circuitry. The ERR pin asserts HIGH only during a read cycle when a correctable error is found - no automatic write-back occurs.
It supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and enters seamless standby mode when both byte enables are deasserted - independent of CE state. Address range spans A0–A17 (18 address bits), enabling full 256K-word addressing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16-bit organization) |
| Access Time | 45 ns at VCC = 2.2–3.6 V - defines maximum clock rate for synchronous interface integration |
| ECC Function | On-die single-bit error detection and correction per 16-bit word - eliminates need for external ECC logic |
| Standby Current | Max 8.7 µA at TA = 85 °C - enables battery-backed retention in low-power industrial systems |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with 3.3 V logic domains and mixed-voltage SoC interfaces |
| ERR Pin Behavior | Open-drain output asserted HIGH only during read cycles with detected/corrected single-bit error - no latching or interrupt generation |
| Data Retention | 1.0 V minimum VCC - allows extended hold mode during brown-out conditions without data loss |
Pinout & Package
Package: 44-pin Thin Small Outline Package Type II (TSOP II), RoHS-compliant, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decoding; no internal multiplexing |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when deselected or during write setup |
| CE (Pin 6) | Chip Enable (Single CE mode) | Active-Low enable; device selected only when CE = LOW and OE/WE controlled appropriately |
| OE (Pin 42) | Output Enable | Active-Low control for read data output; HI-Z when deasserted, regardless of CE state |
| WE (Pin 29) | Write Enable | Active-Low signal initiating write cycle; latches data on rising edge of WE |
| BLE (Pin 38) | Byte Low Enable | Enables write/read to I/O0–I/O7 only; used for 8-bit sub-word access in 16-bit bus systems |
| BHE (Pin 37) | Byte High Enable | Enables write/read to I/O8–I/O15 only; pairs with BLE for flexible byte granularity |
| ERR (Pin 29, shared with /WE in TSOP) | Error Indication Output | Open-drain signal asserted HIGH during read cycle when single-bit error is corrected; requires external pull-up |
| VCC (Pins 11, 34) | Power Supply | Dual VCC pins reduce IR drop and improve noise immunity across wide operating temperature range |
| VSS (Pins 12, 33) | Ground | Dual ground pins provide low-inductance return path for I/O and core logic switching currents |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | Real-time single-bit error correction per 16-bit word without CPU intervention or external logic |
| Byte Power Down mode | Automatic entry into ultra-low-power standby when both BHE and BLE are deasserted - independent of CE state |
| TTL-compatible I/O levels | Supports direct interfacing with legacy 3.3 V microcontrollers and FPGAs without level shifters |
| Multi-voltage operation | Valid operation across 2.2–3.6 V - accommodates voltage scaling in power-managed systems |
| ERR pin signaling | Dedicated open-drain output indicating correction event timing and location - enables diagnostic logging |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor fusion outputs and control command history in programmable logic controllers with extended uptime requirements. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM buffer with ECC protection for critical runtime variables and firmware patch storage. Use Value: Prevents silent data corruption in multi-year deployments where periodic memory scrubbing is impractical. |
Use Scenario: Caching image processing intermediate results in portable ultrasound units powered by rechargeable batteries. IC Role / Device Role / Timing Role: Low-power, fast-access working memory between FPGA-based image pipeline stages. Use Value: Enables 45 ns read latency while maintaining <8.7 µA standby draw - extending battery life between charges. |
| Avionics Flight Data Recorder | Railway Signaling Controller |
|
Use Scenario: Capturing timestamped telemetry streams during aircraft flight phases where radiation-induced bit flips pose reliability risk. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with SER FIT rate <0.1 FIT/Mb - used for cyclic redundancy-checked frame buffers. Use Value: Reduces uncorrectable error probability by >99% compared to standard SRAM in high-altitude environments. |
Use Scenario: Holding interlocking logic state tables in wayside signaling cabinets exposed to wide ambient temperature swings (–40 °C to +85 °C). IC Role / Device Role / Timing Role: Industrial-grade memory with guaranteed operation across full temperature range and dual VCC support. Use Value: Eliminates need for external voltage supervisors or thermal derating margins in outdoor cabinet designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No integrated ECC; requires external error-checking logic or software overhead | Lacks hardware-level error reporting; unsuitable for safety-critical systems requiring autonomous correction | Select only if system-level ECC is already implemented and cost sensitivity outweighs reliability assurance |
| Micron MT45W8MW16BGX-107 IT:D | DDR2 SDRAM with optional ECC mode; asynchronous interface not supported; requires clocked controller | Needs memory controller with DDR protocol stack; incompatible with simple parallel bus microcontrollers | Choose only when migrating to higher-density, lower-cost DRAM architecture and redesigning controller firmware |
Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:D, CY62147GE30-45ZSXI delivers autonomous, pin-level ECC correction with zero software overhead, fits legacy parallel bus designs, and guarantees industrial temperature operation - making it optimal for retrofitting reliability into existing 16-bit embedded systems.
Availability
CY62147GE30-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics flight data recorders requiring stable component supply across extended product lifecycles.
Supply support for CY62147GE30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired from Cypress Semiconductor.
CY62147GE belongs to the MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded applications where data integrity and battery longevity are critical design constraints.
FAQ
Does CY62147GE30-45ZSXI support automatic error correction write-back?
No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. Corrected data appears on I/O lines, and the host system must initiate any write to persist the fix. This behavior is explicitly documented in Note 1 of the datasheet and confirmed in the ERR pin functional description.
What is the function of the ERR pin during normal (error-free) operation?
During error-free reads, the ERR pin remains in high-impedance (HI-Z) state and must be externally pulled up to VCC. It only actively drives HIGH for the duration of a read cycle in which a correctable single-bit error is detected and corrected - no latching or pulse stretching occurs.
Can CY62147GE30-45ZSXI operate at 1.8 V?
No. This variant (suffix "30") is rated for 2.2 V to 3.6 V operation only. The 1.65–2.2 V range applies only to CY62147G(E)18 variants. Attempting 1.8 V operation violates the specified VCC min for this part number and may result in timing violations or ECC failure.
Is the 44-pin TSOP II package pin-compatible with CY62147G variants?
Yes - mechanical and signal pinouts match across CY62147G, CY62147GE, and CY621472G in 44-pin TSOP II. However, CY62147GE repurposes Pin 29 as ERR (shared with /WE), requiring PCB layout verification to ensure /WE functionality is preserved or routed accordingly in new designs.
CY62147GE30-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62147GE30-45ZSXI FAQ
1.How can I place an order for CY62147GE30-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GE30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GE30-45ZSXI reliable?
The price and inventory of CY62147GE30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GE30-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62147GE30-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GE30-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GE30-45ZSXI?
CY62147GE30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GE30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GE30-45ZSXI?
For technical support, including CY62147GE30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GE30-45ZSXI requirements.
6.How does Aetrix verify that CY62147GE30-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62147GE30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GE30-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62147GE30-45ZSXI?
All CY62147GE30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GE30-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GE30-45ZSXI part is unused and in its original packaging.
Return procedure for CY62147GE30-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62147GE30-45ZSXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
