Infineon Technologies CY62147GE30-45ZSXIT

Overview

CY62147GE30-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2 V–3.6 V supply. It features an ERR output pin for real-time ECC event indication, ultra-low standby current (8.7 µA max), and TTL-compatible I/Os. Used in industrial control modules requiring data integrity under voltage fluctuation or radiation-prone environments.

For engineers reviewing the CY62147GE30-45ZSXIT datasheet, CY62147GE30-45ZSXIT pinout, CY62147GE30-45ZSXIT application, or CY62147GE30-45ZSXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, byte-select power-down logic, dual/single CE configuration support, and validated alternatives for memory subsystem hardening.

Technical Context

This SRAM implements a full CMOS MoBL architecture with on-die ECC encoder/decoder, supporting automatic single-bit error correction during read cycles and asserting ERR = HIGH upon detection. The device operates across three independent V_CC ranges - including 2.2 V–3.6 V for this variant - with separate timing and power specs per range.

It supports both single-CE (CE active low) and dual-CE (CE1 low + CE2 high) addressing modes, and includes dedicated BHE/ BLE controls for upper/lower byte writes and reads. Byte Power Down activates automatically when both BHE and BLE are deasserted, forcing immediate transition to standby regardless of CE state.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.5 mm ball pitch, RoHS-compliant, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE30-45ZSXIT uniquely delivers hardware ECC with visible ERR output in a single 16-bit device, reducing BOM count and eliminating software error-handling latency - critical for deterministic industrial and transportation control systems.

Availability

CY62147GE30-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics sensor hubs, and railway event loggers requiring stable component supply, long-term lifecycle assurance, and ECC-enabled data integrity.

Supply support for CY62147GE30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial-grade qualification.

CY62147GE belongs to Infineon's MoBL® (Mobile Low-power) SRAM product line, designed specifically for battery-constrained and mission-critical embedded systems requiring zero-error data retention and minimal standby power.

FAQ

Does CY62147GE30-45ZSXIT support automatic error correction without host intervention?

Yes. The device performs single-bit error correction autonomously during every read cycle using on-die ECC logic. When correction occurs, the ERR pin asserts HIGH for one clock cycle, requiring no host software action. No write-back or register access is needed - correction is transparent and immediate.

What is the function of the Byte Power Down feature?

When both BHE and BLE are deasserted (HIGH), the device enters ultra-low-power standby mode regardless of CE or OE state. This feature reduces current to ≤8.7 µA even while chip enables remain active, enabling dynamic power gating in partial-byte-access systems without reconfiguring chip select logic.

Can CY62147GE30-45ZSXIT operate at 1.8 V?

No. This variant (suffix "30") is specified only for the 2.2 V–3.6 V V_CC range. For 1.65 V–2.2 V operation, the CY62147G(E)18 variant must be used. Attempting 1.8 V operation on the "30" version violates datasheet limits and may cause timing violations or data corruption.

Is the ERR pin open-drain or push-pull?

The ERR pin is open-drain. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to generate a valid HIGH-level signal. During normal operation ERR remains HIGH-impedance; it pulls LOW only briefly during error detection - but per datasheet Figure 16, ERR = HIGH indicates correction occurred.