Infineon Technologies CY62147GE-45ZSXIT

Overview

CY62147GE-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2 V–3.6 V supply range. It features an ERR output pin for real-time ECC event indication, ultra-low standby current (8.7 µA max), and TTL-compatible I/Os. Used in industrial control modules requiring data integrity under radiation-prone or long-term reliability conditions.

For engineers reviewing the CY62147GE-45ZSXIT datasheet, CY62147GE-45ZSXIT pinout, CY62147GE-45ZSXIT application, or CY62147GE-45ZSXIT equivalent, key selection criteria include ECC-enabled memory integrity, dual-voltage operation (2.2–3.6 V), 45 ns timing, 48-ball VFBGA package compatibility, and ERR signal behavior during read-cycle correction events.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors in real time during read operations, with no automatic write-back - correction occurs only in the sense amplifier path. The ERR pin asserts HIGH upon successful 1-bit correction, enabling system-level fault logging without interrupting memory access flow.

It supports both single and dual chip enable configurations, byte-level write control via BHE/ BLE, and seamless Byte Power Down mode when both byte enables are deasserted - reducing standby power independent of CE state. Address decoding covers A0–A17 (18-bit), supporting full 256K-word addressing with no external address multiplexing.

Key Specifications

Pinout & Package

48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch), RoHS-compliant, moisture sensitivity level 3. Pin layout optimized for signal integrity: power/ground balls distributed across corners and edges; address/data lines grouped with controlled impedance routing paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE-45ZSXIT uniquely delivers hardware-accelerated ECC with dedicated ERR signaling in a 16-bit × 256K configuration and 45 ns timing - essential for deterministic, safety-aware memory subsystems in industrial and transportation electronics.

Availability

CY62147GE-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62147GE-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY62147GE belongs to the MoBL® (Mobile Bit-Library) SRAM product line, designed specifically for battery-powered and mission-critical embedded systems demanding ultra-low power, ECC resilience, and industrial temperature operation.

FAQ

Does CY62147GE-45ZSXIT support automatic error correction write-back?

No. The device performs single-bit error correction in the sense amplifier path during read cycles only, and does not perform automatic write-back to memory cells. Corrected data appears on I/O lines, but the original erroneous bit remains unmodified in the array unless explicitly rewritten by the host system.

What is the function of the ERR pin during normal (error-free) operation?

During error-free reads, the ERR pin remains in a high-impedance (HI-Z) state when not actively driven. It only asserts HIGH (requires external pull-up) for the duration of a read cycle where a single-bit error is detected and corrected. No pulse filtering or debouncing is built-in - system firmware must sample ERR synchronously with OE timing.

Can CY62147GE-45ZSXIT operate at 1.8 V?

No. This specific variant (CY62147GE-45ZSXIT) is rated for 2.2 V to 3.6 V operation only. The 1.65 V–2.2 V speed grade (55 ns) is offered under part numbers like CY62147GE-55SXI, not the -45ZSXIT suffix. Operating below 2.2 V violates datasheet specifications and may cause timing violations or ECC failure.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The ZSXIT suffix denotes a lead-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified per J-STD-020 moisture sensitivity level 3 (MSL3), and compatible with standard Pb-free reflow profiles (peak 260 °C).