Infineon Technologies CY62147GN18-55BVXI

Overview

CY62147GN18-55BVXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 55 ns access time, 1.65–2.2 V supply voltage range, 3.5 µA typical standby current, and 48-ball VFBGA package. It supports dual chip enable (CE1/CE2), byte-level write control via BHE/ BLE, and TTL-compatible I/O for embedded memory buffering in portable industrial controllers.

For engineers reviewing the CY62147GN18-55BVXI datasheet, CY62147GN18-55BVXI pinout, CY62147GN18-55BVXI application, or CY62147GN18-55BVXI equivalent, this SRAM delivers verified low-voltage operation, byte-selectable power-down, and industrial-grade temperature stability across 1.65–2.2 V rails with guaranteed 55 ns timing at –40 °C to +85 °C.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with row/column decoding, sense amplifiers, and input/output buffers optimized for low-power active and standby modes. Its dual CE architecture enables hierarchical memory mapping, while BHE/ BLE inputs allow independent upper- and lower-byte write enable without external logic.

The device features automatic standby entry when both byte enables are deasserted-regardless of CE state-enabling seamless power gating in battery-backed systems. Data retention at 1.0 V is supported, and all I/Os enter high-impedance state during deselection or control signal deassertion.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, CY62147GN18-55BVXI uniquely supports 1.65–2.2 V operation with byte-selectable auto-standby-critical for ultra-low-power portable instrumentation where voltage headroom and sleep-state optimization are constrained.

Availability

CY62147GN18-55BVXI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, smart energy metering, and ruggedized telematics gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62147GN18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.

CY62147GN belongs to the MoBL® (Mobile Low-power) SRAM product line, engineered specifically for battery-constrained and thermally demanding embedded systems requiring deterministic timing and minimal quiescent power.

FAQ

Does CY62147GN18-55BVXI support true 1.8 V operation with guaranteed timing?

Yes. The "18" suffix denotes the 1.65–2.2 V VCC range, and the "55" specifies 55 ns maximum access time fully characterized at VCC = 1.8 V and TA = –40 °C to +85 °C per datasheet Rev. *D, page 10. All AC parameters-including tAA, tOE, and tHZ-are guaranteed across this voltage and temperature range without derating.

Can CE1 and CE2 be tied together for single-enable operation?

No. CY62147GN18-55BVXI is a dual-CE variant: CE1 must be driven low and CE2 high for access. Tying them together violates the functional truth table (page 15) and forces the device into permanent deselection. For single-CE operation, use CY621472GN variants instead.

What happens to data integrity during power ramp-down below 1.0 V?

Data is retained as long as VCC remains ≥1.0 V, per datasheet page 9. Below 1.0 V, retention is not guaranteed. The device does not include internal voltage monitoring or auto-store functionality; external brown-out detection and controlled power-down sequencing are required for safe data preservation.

Is the 48-ball VFBGA footprint compatible with JEDEC MO-249AC standard?

Yes. The package conforms to JEDEC MO-249AC: 48-ball VFBGA, 6 mm × 8 mm body, 0.5 mm ball pitch, and 0.3 mm ball diameter. Footprint dimensions, solder mask, and stencil recommendations are provided in Cypress package diagram DS002-10624, page 17.