Infineon Technologies CY62147GN18-55BVXIT

Overview

CY62147GN18-55BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 55 ns access time, 1.65–2.2 V supply voltage, 3.5 µA typical standby current, and 48-ball VFBGA package. It serves as non-volatile-critical fast-access memory in industrial embedded controllers requiring byte-selective write control and ultra-low power retention.

For engineers reviewing the CY62147GN18-55BVXIT datasheet, CY62147GN18-55BVXIT pinout, CY62147GN18-55BVXIT application, or CY62147GN18-55BVXIT equivalent, key selection criteria include dual CE support, BHE/BLE byte enable architecture, 1.0-V data retention capability, and industrial-grade temperature operation (–40 °C to +85 °C).

Technical Context

This SRAM implements a synchronous, address-decoded memory array with independent row/column decoding and TTL-compatible I/O buffers. Its dual chip enable (CE1/CE2) logic requires CE1 LOW and CE2 HIGH for activation, while byte-level writes are controlled by separate BHE (I/O8–I/O15) and BLE (I/O0–I/O7) signals.

The device features automatic Byte Power Down: when both BHE and BLE are deasserted, it enters standby mode regardless of CE state-enabling dynamic power gating without external control logic. Data retention at 1.0 V is supported across the full industrial temperature range.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-55QLI and AS6C4008-55ZIN, CY62147GN18-55BVXIT uniquely delivers 4 Mbit density with 1.65–2.2 V operation, dual CE, and hardware-triggered standby-making it optimal for space-constrained, battery-backed industrial edge nodes.

Availability

CY62147GN18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, automotive ADAS sensor hubs, and smart energy meter data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62147GN18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.

CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-sensitive portable and embedded systems needing fast, low-voltage, byte-controllable memory with guaranteed data retention during brown-out events.

FAQ

What is the maximum clock frequency supported by CY62147GN18-55BVXIT?

CY62147GN18-55BVXIT is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by access time (55 ns) and cycle time (110 ns), supporting up to ~9.1 MHz random read/write throughput when interfaced with appropriate address setup/hold timing.

Can CY62147GN18-55BVXIT operate at 1.8 V with full timing specification compliance?

Yes. The "18" in the part number denotes the 1.65–2.2 V VCC range, and the 55 ns access time is fully specified and tested at VCC = 1.8 V ±0.15 V over –40 °C to +85 °C, per datasheet Rev. *D Section 6.

Does CY62147GN18-55BVXIT require external pull-up or pull-down resistors on control pins?

No. All control inputs (CE1, CE2, WE, OE, BHE, BLE) have internal weak pull-downs or are CMOS-compatible with rail-to-rail logic thresholds. External biasing is unnecessary unless specific board-level noise immunity requirements dictate otherwise.

How is data retention verified at 1.0 V for CY62147GN18-55BVXIT?

Data retention at 1.0 V is guaranteed per datasheet Section 9.2: devices are tested at 1.0 V and 85 °C for ≥24 hours with all address/data lines held static; no bit failures permitted. This test validates functionality during backup-battery-only operation.