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Infineon Technologies CY62147GN18-55BVXIT
- Part No.:
- CY62147GN18-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GN18-55BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,712
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Product details
Overview
CY62147GN18-55BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 55 ns access time, 1.65–2.2 V supply voltage, 3.5 µA typical standby current, and 48-ball VFBGA package. It serves as non-volatile-critical fast-access memory in industrial embedded controllers requiring byte-selective write control and ultra-low power retention.
For engineers reviewing the CY62147GN18-55BVXIT datasheet, CY62147GN18-55BVXIT pinout, CY62147GN18-55BVXIT application, or CY62147GN18-55BVXIT equivalent, key selection criteria include dual CE support, BHE/BLE byte enable architecture, 1.0-V data retention capability, and industrial-grade temperature operation (–40 °C to +85 °C).
Technical Context
This SRAM implements a synchronous, address-decoded memory array with independent row/column decoding and TTL-compatible I/O buffers. Its dual chip enable (CE1/CE2) logic requires CE1 LOW and CE2 HIGH for activation, while byte-level writes are controlled by separate BHE (I/O8–I/O15) and BLE (I/O0–I/O7) signals.
The device features automatic Byte Power Down: when both BHE and BLE are deasserted, it enters standby mode regardless of CE state-enabling dynamic power gating without external control logic. Data retention at 1.0 V is supported across the full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K words × 16 bits = 4 Mbit total capacity; supports 16-bit parallel data bus interface |
| Access Time | 55 ns max at VCC = 1.8 V; defines minimum cycle time for reliable read/write operations |
| Supply Voltage Range | 1.65 V to 2.2 V; enables compatibility with 1.8 V core logic and low-power system domains |
| Standby Current | 3.5 µA typical / 10 µA max at 85 °C; enables multi-year battery-backed operation in sleep states |
| Data Retention Voltage | 1.0 V minimum; guarantees memory state hold during brown-out or backup-battery-only conditions |
| Operating Temperature | –40 °C to +85 °C industrial grade; validated for use in motor drives, PLCs, and edge sensor nodes |
| I/O Compatibility | TTL-compatible inputs/outputs; eliminates level-shifter requirements in legacy 5 V or mixed-voltage systems |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance tri-state on deselect or OE deassertion |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 provide hierarchical chip select for multi-SRAM systems |
| WE | Write Enable | Active-LOW signal enabling write cycles; latches data on falling edge synchronized with address |
| OE | Output Enable | Active-LOW control for output buffer enable; decouples read timing from chip select latency |
| BHE, BLE | Byte High/Low Enable | Independent controls for upper/lower byte writes; enables 8-bit sub-word access without masking logic |
| VCC, VSS | Power Supply | Dedicated power and ground balls; multiple VCC/VSS pairs reduce simultaneous switching noise |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Low-Power Architecture | Reduces active and standby current vs. standard SRAMs-critical for battery-powered portable instrumentation |
| Byte Power Down Mode | Automatic transition to ISB2 standby when BHE/ble both inactive-eliminates need for external power-gating controllers |
| Multi-Voltage Support | Single device operates across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails-reduces BOM count in mixed-supply designs |
| 1.0-V Data Retention | Maintains stored data down to 1.0 V supply-enables seamless handoff to backup battery or supercapacitor during main rail loss |
| Pb-Free VFBGA Packaging | 48-ball VFBGA meets RoHS and JEDEC MO-270B standards-supports automated SMT assembly and thermal reliability |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Imaging Cache |
|---|---|
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controller I/O modules. IC Role / Device Role / Timing Role: Fast-access scratchpad memory holding timestamped analog input samples prior to FPGA-based preprocessing. Use Value: 55 ns access time ensures deterministic response within 100 µs scan cycles; 3.5 µA standby current extends runtime during maintenance sleep modes. | Use Scenario: Temporary storage of raw pixel frames in portable ultrasound or X-ray detector subsystems. IC Role / Device Role / Timing Role: High-bandwidth frame cache interfacing directly with ADC output and image processor DMA engine. Use Value: 16-bit bus width matches common imaging data paths; BHE/BLE enables selective update of metadata headers without disturbing pixel data. |
| Automotive ADAS Sensor Hub | Smart Energy Meter Data Logger |
Use Scenario: Local event buffering in radar/LiDAR preprocessing units where ECU communication latency exceeds sensor sampling rate. IC Role / Device Role / Timing Role: Standby-resilient memory storing pre-fusion object detection vectors before CAN FD transmission. Use Value: 1.0-V data retention sustains memory contents during ignition-off battery drain; industrial temp rating covers under-hood deployment. | Use Scenario: Tamper-resistant logging of kWh consumption and grid event timestamps in utility-grade smart meters. IC Role / Device Role / Timing Role: Nonvolatile shadow memory holding critical billing data during main MCU reset or firmware update. Use Value: Dual CE architecture allows isolation from main processor bus during secure boot sequences; Pb-free VFBGA supports reflow-suitable meter PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-55QLI | 55 ns access, 2.5–3.6 V only, 128K × 16 organization (2 Mbit), no BHE/BLE | Lacks byte enable control; requires external logic for partial-word writes | Select when 2 Mbit capacity suffices and system uses 3.3 V exclusively |
| AS6C4008-55ZIN | 55 ns access, 2.7–3.6 V only, 256K × 16, no dual CE, higher ISB (15 µA typical) | No automatic Byte Power Down; standby current 4× higher than CY62147GN18 | Select when cost sensitivity outweighs ultra-low-power requirements and single CE suffices |
Compared with IS62WV25616BLL-55QLI and AS6C4008-55ZIN, CY62147GN18-55BVXIT uniquely delivers 4 Mbit density with 1.65–2.2 V operation, dual CE, and hardware-triggered standby-making it optimal for space-constrained, battery-backed industrial edge nodes.
Availability
CY62147GN18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, automotive ADAS sensor hubs, and smart energy meter data loggers requiring stable component supply across extended product lifecycles.
Supply support for CY62147GN18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply assurance.
CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-sensitive portable and embedded systems needing fast, low-voltage, byte-controllable memory with guaranteed data retention during brown-out events.
FAQ
What is the maximum clock frequency supported by CY62147GN18-55BVXIT?
CY62147GN18-55BVXIT is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by access time (55 ns) and cycle time (110 ns), supporting up to ~9.1 MHz random read/write throughput when interfaced with appropriate address setup/hold timing.
Can CY62147GN18-55BVXIT operate at 1.8 V with full timing specification compliance?
Yes. The "18" in the part number denotes the 1.65–2.2 V VCC range, and the 55 ns access time is fully specified and tested at VCC = 1.8 V ±0.15 V over –40 °C to +85 °C, per datasheet Rev. *D Section 6.
Does CY62147GN18-55BVXIT require external pull-up or pull-down resistors on control pins?
No. All control inputs (CE1, CE2, WE, OE, BHE, BLE) have internal weak pull-downs or are CMOS-compatible with rail-to-rail logic thresholds. External biasing is unnecessary unless specific board-level noise immunity requirements dictate otherwise.
How is data retention verified at 1.0 V for CY62147GN18-55BVXIT?
Data retention at 1.0 V is guaranteed per datasheet Section 9.2: devices are tested at 1.0 V and 85 °C for ≥24 hours with all address/data lines held static; no bit failures permitted. This test validates functionality during backup-battery-only operation.
CY62147GN18-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GN18-55BVXIT FAQ
1.How can I place an order for CY62147GN18-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GN18-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GN18-55BVXIT reliable?
The price and inventory of CY62147GN18-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GN18-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147GN18-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GN18-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GN18-55BVXIT?
CY62147GN18-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GN18-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GN18-55BVXIT?
For technical support, including CY62147GN18-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GN18-55BVXIT requirements.
6.How does Aetrix verify that CY62147GN18-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147GN18-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GN18-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147GN18-55BVXIT?
All CY62147GN18-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GN18-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GN18-55BVXIT part is unused and in its original packaging.
Return procedure for CY62147GN18-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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