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Infineon Technologies CY62147GN30-45B2XI
- Part No.:
- CY62147GN30-45B2XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GN30-45B2XI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,323
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Product details
Overview
CY62147GN30-45B2XI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It supports dual chip enable (CE1/CE2), byte-level write control via BHE/BLE, and TTL-compatible I/O for embedded memory buffering in portable industrial controllers.
For engineers reviewing the CY62147GN30-45B2XI datasheet, CY62147GN30-45B2XI pinout, CY62147GN30-45B2XI application, or CY62147GN30-45B2XI equivalent, this SRAM delivers verified 16-bit parallel interface timing, dual-voltage operation, byte-select power-down behavior, and VFBGA-48 packaging suitable for space-constrained battery-powered systems.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with row/column decoding, sense amplifiers, and input/output buffers optimized for low-latency random access. Its dual CE architecture enables hierarchical memory mapping, while BHE/BLE logic gates write enable to upper/lower byte lanes independently.
The device features automatic power-down activation when both BHE and BLE are deasserted - independent of CE state - reducing ISB2 to 3.5 µA at 25 °C. It operates across three VCC ranges, with AC timing validated at fmax = 22.22 MHz (45 ns cycle) under 2.2–3.6 V conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (256K words × 16 bits) - supports 16-bit data bus interfacing without external multiplexing |
| Access time | 45 ns - guarantees sub-50 ns read/write latency at 2.2–3.6 V, enabling real-time firmware execution |
| Supply voltage | 2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails; excludes 1.8 V or 5 V variants |
| Standby current | 3.5 µA typical (ISB2) - enables multi-year battery life in always-on sensor nodes |
| Operating current | 15 mA typical (ICC) at fmax - defines thermal budget for continuous burst-mode access |
| Byte enable control | BHE/BLE pins - allow independent 8-bit writes to upper/lower bytes, reducing bus contention in mixed-data systems |
| Data retention | 1.0 V minimum - maintains stored contents during brown-out or controlled power-gating sequences |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; no internal address latching |
| I/O0–I/O15 | Bi-directional data bus | 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive |
| CE1, CE2 | Dual chip enable inputs | Active-Low CE1 and Active-High CE2 required simultaneously for device selection; enables hierarchical memory decode |
| WE | Write enable | Active-Low signal initiating write cycle; sampled synchronously with address and data setup |
| OE | Output enable | Active-Low control for read data output; independent of CE state for flexible bus sharing |
| BHE, BLE | Byte high/low enable | Control write access to I/O8–I/O15 (BHE) or I/O0–I/O7 (BLE); both low triggers auto-standby mode |
| VCC, VSS | Power supply terminals | Single VCC rail (2.2–3.6 V); separate VSS pins reduce ground bounce in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® low-power architecture | Reduces active and standby current vs. standard SRAMs, enabling use in energy-harvesting edge nodes |
| Byte Power Down mode | Automatic transition to ISB2 ≤ 3.5 µA when BHE and BLE are both deasserted - no software or external logic required |
| TTL-compatible I/O | Supports direct connection to legacy microcontrollers and FPGAs without level-shifting circuitry |
| Wide VCC operating range | Validated operation from 2.2 V to 3.6 V ensures compatibility with Li-ion, USB, and regulated DC-DC outputs |
| Industrial temperature grade | Specified from –40 °C to +85 °C - qualified for deployment in factory automation and outdoor telemetry units |
Applications
| Portable Medical Monitor | Industrial PLC I/O Module |
|---|---|
|
Use Scenario: Real-time waveform buffering in handheld ECG devices with intermittent wireless upload. IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM storing 16-bit ADC samples prior to Bluetooth LE transmission. Use Value: 45 ns access enables gapless sampling at ≥22 kHz; 3.5 µA ISB2 extends battery life beyond 12 months on coin cell. |
Use Scenario: Local register storage for analog input channel calibration coefficients in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Nonvolatile-retentive memory holding factory-trimmed gain/offset values accessible during cold start. Use Value: 1.0 V data retention allows safe hold during 100 ms brown-out; BHE/BLE enables field-updatable per-channel parameters. |
| Smart Meter Data Logger | Automotive Body Control Unit |
|
Use Scenario: Cyclic logging of voltage/current measurements during grid outage events. IC Role / Device Role / Timing Role: Dual-port-capable buffer accepting metering SoC writes while allowing host MCU reads during communication windows. Use Value: 48-ball VFBGA footprint minimizes PCB area; 2.2–3.6 V range matches supercapacitor backup supply profile. |
Use Scenario: Storing diagnostic trouble codes and sensor history in vehicle door modules with limited board space. IC Role / Device Role / Timing Role: Low-EMI, pin-compatible SRAM interfaced to 8-bit automotive MCU with shared address/data bus. Use Value: TTL-compatible I/O eliminates level shifters; industrial temp rating ensures reliability behind dashboard panels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-45NLI | 45 ns access, 2.5–3.6 V only, no Byte Power Down, 44-pin TSOP II package | Lacks automatic BHE/BLE-triggered standby; requires external power management for ultra-low ISB | Select when board layout uses TSOP II sockets or when byte-level power control is unnecessary |
| ON Semiconductor NVSRAM N25S80A16T1G | Nonvolatile SRAM with integrated EEPROM backup; 55 ns access; 3.3 V only; higher ICC (25 mA) | Provides automatic data retention on power loss but consumes >6× more active current | Select when persistent storage without external backup capacitor or battery is mandatory |
Compared with IS62WV25616BLL-45NLI and N25S80A16T1G, CY62147GN30-45B2XI uniquely balances 45 ns speed, 3.5 µA standby, and hardware-triggered byte power-down - making it optimal for battery-critical, space-constrained, and intermittently powered embedded systems.
Availability
CY62147GN30-45B2XI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, smart meter data loggers, and automotive body control units requiring stable component supply and long-term obsolescence support.
Supply support for CY62147GN30-45B2XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.
CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for ultra-low-power, high-speed parallel memory in battery-operated and thermally constrained embedded systems.
FAQ
What is the maximum clock frequency supported by CY62147GN30-45B2XI?
CY62147GN30-45B2XI does not use a clock signal; it is an asynchronous SRAM. Its 45 ns access time corresponds to a maximum effective cycle rate of 22.22 MHz when operated with proper address/data setup and hold timing. No internal oscillator or clock input exists - timing is governed solely by external control signal edges (CE, WE, OE).
Does CY62147GN30-45B2XI support single-chip-enable operation?
No - CY62147GN30-45B2XI is the dual CE variant (CE1 and CE2), as indicated by the "GN" suffix and confirmed in the pinout diagrams. Single CE versions are designated CY621472GN. This part requires CE1 LOW and CE2 HIGH for selection; using only one CE signal will prevent memory access.
Can CY62147GN30-45B2XI operate at 1.8 V?
No - CY62147GN30-45B2XI is rated for 2.2 V to 3.6 V operation only. The 1.65–2.2 V range applies to the CY62147GN18 variant (55 ns speed grade). Attempting 1.8 V operation violates the absolute minimum VCC specification and may result in data corruption or failure to meet timing.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes - the CY62147GN30-45B2XI package is Pb-free and RoHS compliant, as explicitly stated in the datasheet's Features section and confirmed in the Ordering Information table (suffix "B2XI" denotes lead-free, industrial-grade VFBGA).
CY62147GN30-45B2XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GN30-45B2XI FAQ
1.How can I place an order for CY62147GN30-45B2XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GN30-45B2XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GN30-45B2XI reliable?
The price and inventory of CY62147GN30-45B2XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GN30-45B2XI is usually 5 days.
3.What payment methods are accepted for CY62147GN30-45B2XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GN30-45B2XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GN30-45B2XI?
CY62147GN30-45B2XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GN30-45B2XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GN30-45B2XI?
For technical support, including CY62147GN30-45B2XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GN30-45B2XI requirements.
6.How does Aetrix verify that CY62147GN30-45B2XI is sourced from the original manufacturer or authorized distributors?
All CY62147GN30-45B2XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GN30-45B2XI meets industry standards.
7.What is the process for return or replacement of CY62147GN30-45B2XI?
All CY62147GN30-45B2XI units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GN30-45B2XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GN30-45B2XI part is unused and in its original packaging.
Return procedure for CY62147GN30-45B2XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62147GN30-45B2XI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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