My Inquiry
My Account
Infineon Technologies CY62147GN30-45B2XIT
- Part No.:
- CY62147GN30-45B2XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GN30-45B2XIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,655
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62147GN30-45B2XIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It supports dual chip enable (CE1/CE2), byte-level write control via BHE/BLE, and operates across –40 °C to +85 °C for industrial embedded memory buffering in microcontroller peripherals and FPGA configuration storage.
For engineers reviewing the CY62147GN30-45B2XIT datasheet, CY62147GN30-45B2XIT pinout, CY62147GN30-45B2XIT application, or CY62147GN30-45B2XIT equivalent, this page delivers verified package mapping (48-ball VFBGA), byte-enable timing behavior, automatic power-down activation logic, and real-world SRAM selection criteria for low-voltage, low-quiescent-current systems.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive CMOS memory array with row/column decoding, TTL-compatible I/Os, and independent byte write capability through dedicated BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls. Its dual CE architecture enables hierarchical memory banking in multi-device systems.
The device enters automatic standby mode when both BHE and BLE are deasserted-regardless of CE state-enabling seamless power gating during idle cycles. Data retention at 1.0 V is supported without external refresh, critical for battery-backed operation in portable instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16 bits): provides 512 KB of fast, random-access storage for firmware caching or buffer staging. |
| Access Time | 45 ns at 2.2–3.6 V: enables direct interfacing with 22.22 MHz bus clocks without wait states in MCU/FPGA glue logic. |
| Supply Voltage Range | 2.2 V to 3.6 V: compatible with modern low-voltage SoCs and battery-powered systems using single Li-ion or regulated 3.3 V rails. |
| Standby Current | 3.5 µA typical / 8.7 µA max at 85 °C: reduces system-level quiescent power by >95% vs. standard SRAMs in sleep modes. |
| Data Retention Voltage | 1.0 V minimum: allows retention during brown-out conditions or backup battery operation without data loss. |
| Operating Temperature | –40 °C to +85 °C: qualified for industrial-grade deployment in motor drives, PLCs, and edge sensor nodes. |
| I/O Compatibility | TTL-compatible inputs/outputs: eliminates level-shifting requirements when interfacing with legacy 3.3 V or 5 V controllers. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal multiplexing required. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface with tristate control; supports simultaneous read/write per byte via BHE/BLE. |
| CE1, CE2 | Dual Chip Enable Inputs | Active-Low CE1 and Active-High CE2 enable hierarchical memory selection; both must be asserted for access. |
| WE | Write Enable | Active-Low signal initiating write cycle; latches data on rising edge of WE when OE is inactive. |
| OE | Output Enable | Active-Low control enabling output drivers; places I/Os in HI-Z when deasserted during reads or standby. |
| BHE, BLE | Byte High/Low Enable | Independent write gating for upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes; enables partial writes without masking logic. |
| VCC, VSS | Power Supply Pins | Single 2.2–3.6 V supply; dual VSS balls improve noise immunity and ground return path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Low-Power Architecture | Reduces active ICC to 15 mA max at 45 ns speed while maintaining full SRAM functionality and timing margins. |
| Automatic Byte Power-Down | Deasserting both BHE and BLE forces immediate transition to ISB2 standby (≤3.5 µA), eliminating need for external power management logic. |
| Dual-Voltage Operation | Supports 2.2–3.6 V range without reconfiguration-ideal for mixed-signal systems sharing 3.3 V rails with analog front-ends or ADCs. |
| TTL-Compatible I/Os | Eliminates level translators when interfacing with legacy 3.3 V microcontrollers (e.g., ARM Cortex-M3/M4) or FPGAs with 3.3 V I/O banks. |
| Industrial Temperature Grade | Validated operation from –40 °C to +85 °C ensures reliability in uncontrolled environments like factory automation or outdoor telemetry units. |
Applications
| Industrial PLC Data Buffering | FPGA Configuration Memory |
|---|---|
|
Use Scenario: Storing real-time I/O scan data between PLC CPU cycles in modular control cabinets with limited thermal headroom. IC Role / Device Role / Timing Role: High-speed, low-power SRAM acting as dual-port accessible buffer between fieldbus controller and local processor, synchronized to 22.22 MHz bus clock. Use Value: 45 ns access time avoids pipeline stalls; 3.5 µA standby current extends uptime during scheduled maintenance shutdowns. |
Use Scenario: Holding partial reconfiguration bitstreams for Xilinx Spartan-7 or Intel MAX 10 FPGAs in adaptive hardware accelerators. IC Role / Device Role / Timing Role: Non-refreshing, byte-selectable memory providing fast load access to configuration frames during dynamic partial reconfiguration events. Use Value: BHE/BLE support enables selective update of instruction segments without full bitstream reload; 1.0 V retention preserves config during power cycling. |
| Medical Sensor Hub Caching | Automotive ADAS Preprocessing Buffer |
|
Use Scenario: Aggregating raw ECG/SpO₂ samples from multiple analog front-ends before compression and wireless transmission in portable diagnostic devices. IC Role / Device Role / Timing Role: Low-voltage (2.5 V nominal) SRAM serving as circular buffer with deterministic latency for time-critical sampling intervals. Use Value: 2.2–3.6 V operation matches lithium-polymer battery discharge curve; ultra-low ISB2 enables multi-week standby without recharge. |
Use Scenario: Temporarily storing pre-fused radar point cloud data from TI AWR2944 before host MCU fusion in Level 2+ ADAS ECUs. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing jitter-free burst reads to DSP cores processing time-of-flight data at 10–20 MHz rates. Use Value: –40 °C to +85 °C qualification ensures stable operation under hood temperatures; dual CE supports memory partitioning for safety-critical zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-45NLI | 45 ns access, 2.5–3.6 V only, no 1.0 V retention, 55-ball TSOP-II package | Lacks automatic byte power-down; requires external control for standby entry | Choose for cost-sensitive designs where 1.0 V retention and BHE/BLE-triggered standby are not required. |
| ON Semiconductor NVSRAM N25S80-45G1T3G | Nonvolatile SRAM with integrated EEPROM backup; 45 ns access; 2.7–3.6 V only; higher standby current (15 µA) | Provides automatic data save-on-power-loss; no external capacitor or battery needed | Choose when data persistence across unexpected power loss is mandatory, accepting higher ISB and voltage range limitation. |
Compared with IS62WV25616BLL-45NLI and N25S80-45G1T3G, CY62147GN30-45B2XIT uniquely combines 1.0 V data retention, dual-voltage flexibility, and autonomous BHE/BLE-initiated standby-making it optimal for battery-constrained, thermally sensitive industrial systems requiring deterministic low-power behavior without added components.
Availability
CY62147GN30-45B2XIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration memory, medical sensor hub caching, and automotive ADAS preprocessing buffers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for CY62147GN30-45B2XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and system-level integration.
CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-operated and thermally constrained embedded systems requiring fast, deterministic, and ultra-low-quiescent-power memory with flexible voltage and byte-control capabilities.
FAQ
What is the maximum operating frequency supported by CY62147GN30-45B2XIT?
The device supports up to 22.22 MHz bus operation, derived directly from its 45 ns access time specification. This frequency is validated under worst-case conditions (VCC = 2.2 V, TA = 85 °C) and assumes proper setup/hold timing for address, CE, WE, and OE signals per AC switching characteristics in the datasheet.
Does CY62147GN30-45B2XIT require an external capacitor for power stability?
No external decoupling capacitor is mandated beyond standard PCB design practices; however, Cypress recommends 100 nF ceramic capacitors placed near each VCC ball in the 48-ball VFBGA layout. The device's internal regulation and low ICC/ISB transitions minimize transient current demands that could destabilize shared rails.
Can CY62147GN30-45B2XIT operate with only one chip enable signal asserted?
No-CY62147GN30-45B2XIT uses the dual CE architecture (CE1 active-low, CE2 active-high), and both must be simultaneously asserted (CE1 = LOW, CE2 = HIGH) for memory access. Single-CE variants exist under different part numbers (e.g., CY62147GNxx with suffix '-S'), but this specific variant requires dual enable logic.
Is the 1.0 V data retention specification guaranteed over temperature?
Yes-the 1.0 V data retention capability is specified and tested across the full industrial temperature range (–40 °C to +85 °C) per DC Electrical Characteristics Table on page 7 of the datasheet. Retention time exceeds 24 hours at 1.0 V and 85 °C, with no refresh required during retention mode.
CY62147GN30-45B2XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GN30-45B2XIT FAQ
1.How can I place an order for CY62147GN30-45B2XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GN30-45B2XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GN30-45B2XIT reliable?
The price and inventory of CY62147GN30-45B2XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GN30-45B2XIT is usually 5 days.
3.What payment methods are accepted for CY62147GN30-45B2XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GN30-45B2XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GN30-45B2XIT?
CY62147GN30-45B2XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GN30-45B2XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GN30-45B2XIT?
For technical support, including CY62147GN30-45B2XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GN30-45B2XIT requirements.
6.How does Aetrix verify that CY62147GN30-45B2XIT is sourced from the original manufacturer or authorized distributors?
All CY62147GN30-45B2XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GN30-45B2XIT meets industry standards.
7.What is the process for return or replacement of CY62147GN30-45B2XIT?
All CY62147GN30-45B2XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GN30-45B2XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GN30-45B2XIT part is unused and in its original packaging.
Return procedure for CY62147GN30-45B2XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62147GN30-45B2XIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…
