Infineon Technologies CY62147GN30-45BVXI

Overview

CY62147GN30-45BVXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It features dual chip enable (CE1/CE2), byte-level write control via BHE/ BLE, and automatic power-down when both byte enables are inactive - deployed in battery-backed industrial controllers and portable instrumentation requiring deterministic timing and extended data retention.

For engineers reviewing the CY62147GN30-45BVXI datasheet, CY62147GN30-45BVXI pinout, CY62147GN30-45BVXI application, or CY62147GN30-45BVXI equivalent, this page delivers verified package mapping (48-ball VFBGA), confirmed pin functions (including CE1/CE2 logic polarity), real-world power behavior across temperature, and validated alternatives for voltage- and timing-critical SRAM replacement.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with row/column decoding architecture supporting concurrent address latching and I/O bidirectional buffering. Its dual CE interface requires CE1 LOW and CE2 HIGH for access, while BHE/ BLE independently gate upper/lower byte writes without affecting read path latency.

The device supports three V_CC operating ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the -45BVXI variant is specified for 2.2–3.6 V operation at 45 ns max access time and guarantees ISB2 ≤ 8.7 µA at 85 °C. Data retention down to 1.0 V is supported without refresh.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616ASB-45SI, CY62147GN30-45BVXI uniquely combines dual CE, BHE/ BLE, 1.0 V retention, and sub-10 µA standby - making it optimal for space-constrained, battery-sensitive designs requiring hardware-managed power states.

Availability

CY62147GN30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, portable medical data loggers, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for CY62147GN30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where deterministic timing and long-term data integrity are critical.

FAQ

What is the correct logic polarity for CE1 and CE2 to enable memory access?

Memory access requires CE1 asserted LOW and CE2 asserted HIGH simultaneously. If CE1 is HIGH or CE2 is LOW, the device enters deselected state and all I/Os go high-impedance. This dual-enable scheme prevents accidental activation during power-up sequencing or noise transients on a single enable line.

Does CY62147GN30-45BVXI support true 1.8 V operation?

No - the -45BVXI suffix denotes specification for 2.2–3.6 V operation only. For 1.65–2.2 V operation, the CY62147GN18 variant (55 ns speed grade) must be used. The -45BVXI is not characterized or guaranteed below 2.2 V, and attempting 1.8 V operation may result in timing violations or data corruption.

How does the Byte Power-Down feature interact with chip enable signals?

When both BHE and BLE are HIGH, the device enters automatic standby mode regardless of CE1/CE2 states - meaning it draws ≤8.7 µA even if CE1 is LOW and CE2 is HIGH. This hardware-based power gating occurs independently of external control logic and requires no software intervention.

Can CY62147GN30-45BVXI be used in place of a 256K × 8 SRAM?

Yes, but only with hardware or firmware adaptation: its native 256K × 16 interface must be accessed as two sequential 256K × 8 banks using address bit A0 to select upper/lower byte, or by tying unused I/O pins and configuring MCU GPIOs accordingly. Direct drop-in replacement is not possible without bus-width alignment.