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Infineon Technologies CY62147GN30-45BVXIT
- Part No.:
- CY62147GN30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62147GN30-45BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,101
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Product details
Overview
CY62147GN30-45BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (3.5 µA typical). It supports dual chip enable (CE1/CE2), byte-level write control via BHE/BLE, and operates across industrial temperature (–40 °C to +85 °C), targeting memory buffering in portable industrial controllers.
For engineers reviewing the CY62147GN30-45BVXIT datasheet, CY62147GN30-45BVXIT pinout, CY62147GN30-45BVXIT application, or CY62147GN30-45BVXIT equivalent, key selection criteria include VCC compatibility (2.2–3.6 V), 45 ns timing at fmax = 22.22 MHz, dual CE logic, byte power-down behavior, and 48-ball VFBGA package constraints.
Technical Context
This SRAM implements a synchronous, asynchronous read/write interface with independent upper- and lower-byte write enables (BHE/BLE), enabling selective 8-bit updates without full 16-bit bus activity. Its automatic standby mode activates when both BHE and BLE are deasserted-regardless of CE state-reducing ISB2 to 3.5 µA at 25 °C.
The device uses TTL-compatible I/Os with VIH/VIL thresholds scaled per VCC range (e.g., VIH ≥ 2.0 V at 2.7–3.6 V), and supports data retention down to 1.0 V. It features two distinct chip enable configurations: dual CE (CE1 LOW + CE2 HIGH) for CY62147GN variants, distinguishing it from single-CE CY621472GN derivatives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K words × 16 bits): provides 512 KB of fast, non-refreshing volatile storage for real-time data buffering. |
| Access Time | 45 ns at VCC = 2.2–3.6 V: enables reliable operation at 22.22 MHz bus frequency in microcontroller co-processor interfaces. |
| Supply Voltage Range | 2.2 V to 3.6 V: compatible with modern 3.3 V and mixed-voltage embedded systems, excluding 1.8 V or 5 V domains. |
| Standby Current | 3.5 µA typical / 8.7 µA max at 85 °C: enables multi-year battery life in always-on sensor nodes with periodic wake-up. |
| Operating Temperature | –40 °C to +85 °C: qualified for industrial control, motor drives, and outdoor instrumentation environments. |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch): supports high-density PCB layouts with thermal resistance θJA = 31.35 °C/W. |
| Data Retention | 1.0 V minimum: allows graceful shutdown and low-power hibernation without data loss during brown-out conditions. |
Pinout & Package
48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 6 mm × 8 mm body size, and JEDEC MO-270 compliant footprint. Thermal resistance θJA = 31.35 °C/W (still air, 4-layer PCB).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal multiplexing required. |
| I/O0–I/O7 | Lower-Byte Data I/O | Bi-directional 8-bit data path enabled by BLE; isolated from upper byte during partial writes. |
| I/O8–I/O15 | Upper-Byte Data I/O | Bi-directional 8-bit data path enabled by BHE; allows independent 8-bit reads/writes to high/low bytes. |
| CE1, CE2 | Dual Chip Enable Inputs | Active-Low CE1 and Active-High CE2 must both be asserted (CE1 = LOW, CE2 = HIGH) for device selection. |
| WE | Write Enable | Active-Low signal initiating write cycle; latches data on I/O lines when address is stable and CE active. |
| OE | Output Enable | Active-Low control for output drivers; places I/Os in HI-Z when deasserted, enabling bus sharing. |
| BHE, BLE | Byte High/Low Enable | Independent controls for upper/lower byte write operations; both deasserted triggers automatic standby mode. |
| VCC, VSS | Power Supply Pins | Single 2.2–3.6 V supply with dedicated ground balls; no separate I/O or core voltage rails. |
Key Features
| Feature | Design Value |
|---|---|
| Byte Power-Down Mode | Automatic transition to ISB2 ≤ 8.7 µA when BHE and BLE are both inactive-eliminates need for external power-gating logic. |
| Dual Chip Enable Interface | CE1 (active-low) and CE2 (active-high) provide robust noise-immune chip selection in multi-SRAM systems with shared buses. |
| TTL-Compatible I/O Levels | VIH ≥ 2.0 V and VOL ≤ 0.4 V at 3.0 V VCC ensure interoperability with legacy 3.3 V microcontrollers and FPGAs without level shifters. |
| 1.0-V Data Retention | Maintains stored data during deep sleep or backup battery operation, reducing system-level power management complexity. |
| Industrial Temperature Range | Guaranteed functionality from –40 °C to +85 °C supports deployment in uncontrolled enclosures and motor-drive cabinets. |
Applications
| Industrial PLC Data Buffer | Portable Medical Sensor Cache |
|---|---|
|
Use Scenario: Real-time acquisition of analog sensor streams (ECG, SpO₂) in battery-powered handheld diagnostics units. IC Role / Device Role / Timing Role: Volatile frame buffer holding 256K samples prior to wireless transmission; accessed asynchronously by ADC controller. Use Value: 45 ns access enables sub-µs sampling-to-buffer latency; 3.5 µA standby extends single-charge operation beyond 12 months. |
Use Scenario: Temporary storage of configuration parameters and calibration coefficients in field-deployable environmental monitors. IC Role / Device Role / Timing Role: Non-refreshing scratchpad memory mapped into MCU's external bus interface; retains data during firmware updates. Use Value: 1.0 V data retention ensures integrity during brown-out events; dual CE supports hot-swap memory expansion modules. |
| Automotive Body Control Module | Smart Energy Meter Firmware Cache |
|
Use Scenario: Storing transient CAN message queues and actuator command histories in under-hood junction boxes. IC Role / Device Role / Timing Role: External memory extension for 32-bit ARM Cortex-M7 MCU; accessed via 16-bit parallel bus with byte-enable granularity. Use Value: VFBGA package withstands thermal cycling; 85 °C rating matches under-hood ambient; BHE/BLE reduces EMI during partial writes. |
Use Scenario: Caching tariff tables and consumption logs in DIN-rail mounted electricity meters with 10+ year service life. IC Role / Device Role / Timing Role: Low-power shadow RAM backing flash-based firmware; updated only during meter reconfiguration events. Use Value: 8.7 µA max ISB2 at 85 °C minimizes self-heating in sealed enclosures; Pb-free VFBGA meets RoHS compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access time, 3.3 V only (3.0–3.6 V), single CE, TSOP-44 package, ISB = 12 µA typical. | Lacks byte power-down; requires external logic for partial-byte control; higher standby draw limits battery runtime. | Select when maximum speed (100 MHz bus) outweighs power savings and byte-select flexibility. |
| AS6C4008-55TIN | 55 ns access, 2.7–3.6 V, single CE, SOJ-44, ISB = 2 µA typical but no BHE/BLE support. | No byte-level write enable; all writes affect full 16-bit word; incompatible with partial-update protocols. | Choose for cost-sensitive, non-battery applications where 55 ns timing and minimal standby suffice. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, CY62147GN30-45BVXIT uniquely combines 45 ns speed, dual CE reliability, BHE/BLE byte control, and sub-10 µA standby-enabling energy-efficient partial-word updates in space-constrained industrial designs.
Availability
CY62147GN30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical sensor caching, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for CY62147GN30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power integration and long-term supply stability.
CY62147GN belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-operated and thermally constrained embedded systems requiring fast, deterministic, non-refreshing memory with aggressive power gating.
FAQ
Is CY62147GN30-45BVXIT pin-compatible with CY621472GN30-45BVXI?
No. CY62147GN30-45BVXIT uses dual chip enable (CE1/CE2), while CY621472GN30-45BVXI uses single CE. Pinouts differ: CE2 replaces CE in the latter, and BHE/BLE assignments vary across package variants. Board redesign is required for substitution.
Does CY62147GN30-45BVXIT support 1.8 V operation?
No. This variant is rated for 2.2 V to 3.6 V only. The 1.65–2.2 V speed grade is designated CY62147GN18 (55 ns), not CY62147GN30. Applying 1.8 V violates VCC min specification and may cause data corruption or timing failure.
What happens when both BHE and BLE are HIGH?
The device enters automatic standby mode regardless of CE1/CE2 states, reducing ICC to ISB2 (≤ 8.7 µA). This feature is intrinsic to the MoBL architecture and requires no additional control signals or sequencing.
Can CY62147GN30-45BVXIT be used with 5 V microcontrollers?
No. Its absolute maximum VCC is 3.6 V. Interfacing with 5 V logic requires level-shifting circuitry on all address, data, and control lines-adding propagation delay and board area. Use CY62147GN-45ZSXI (4.5–5.5 V variant) instead.
CY62147GN30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62147GN30-45BVXIT FAQ
1.How can I place an order for CY62147GN30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62147GN30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62147GN30-45BVXIT reliable?
The price and inventory of CY62147GN30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62147GN30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62147GN30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62147GN30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62147GN30-45BVXIT?
CY62147GN30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62147GN30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62147GN30-45BVXIT?
For technical support, including CY62147GN30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62147GN30-45BVXIT requirements.
6.How does Aetrix verify that CY62147GN30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62147GN30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62147GN30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62147GN30-45BVXIT?
All CY62147GN30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62147GN30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62147GN30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62147GN30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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